Method of forming a thin film pattern with a trapezoidal cross section
First Claim
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1. A method of forming a thin film pattern, comprising the steps of:
- forming a thin film on a major surface of a substrate;
forming a resist pattern, which has an inverted-trapezoidal cross section, on the thin film; and
dry-etching the thin film selectively, with the resist pattern having the inverted-trapezoidal cross section employed as a mask, thereby forming a thin film pattern.
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Abstract
The present invention provides a method of forming a thin film pattern with a trapezoidal cross section. In this method, a resist pattern with an inverted-trapezoidal cross section is formed on a thin film. Using the resist pattern with the inverted-trapezoidal cross section as a mask, the thin film is dry-etched. A resist pattern is left with the resist pattern used as a mask. The resist pattern has a trapezoidal cross section.
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13 Claims
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1. A method of forming a thin film pattern, comprising the steps of:
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forming a thin film on a major surface of a substrate; forming a resist pattern, which has an inverted-trapezoidal cross section, on the thin film; and dry-etching the thin film selectively, with the resist pattern having the inverted-trapezoidal cross section employed as a mask, thereby forming a thin film pattern. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification