Plate-mode ultrasonic sensor

• US 5,129,262 A
• Filed: 01/18/1990
• Issued: 07/14/1992
• Est. Priority Date: 02/29/1988
• Status: Expired due to Term

• Current Assignee: Regents of the University of California (University of California)
• Original Assignee: Regents of the University of California (University of California)
• Inventors: White, Richard M., Wenzel, Stuart W.
• Primary Examiner(s): Williams, Hezron E.
• Assistant Examiner(s): Arana, Louis M.
• Application Number:
  US07/467,412
• Time in Patent Office: 908 Days
• Field of Search: 73/599, 73/602, 333/147, 333/149, 310/313 R, 310/313 B, 310/313 A
• US Class Current: 73/599
• CPC Class Codes: B01L 3/5027 by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip B01L3/5023 takes precedence; micromixers B01F33/30; microreactors for synthesis B01J19/0093; microcapillary devices in general B81B1/00
• CPC Class Codes: G01H 13/00 Measuring resonant frequency
• CPC Class Codes: G01H 17/00 Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves, not provided for in the preceding groups see provisionally also G01H1/00
• CPC Class Codes: G01L 9/0025 with acoustic surface waves
• CPC Class Codes: G01N 2291/014 Resonance or resonant frequency
• CPC Class Codes: G01N 2291/0256 Adsorption, desorption, surface mass change, e.g. on biosensors
• CPC Class Codes: G01N 2291/02818 Density, viscosity
• CPC Class Codes: G01N 2291/02827 Elastic parameters, strength or force
• CPC Class Codes: G01N 2291/02854 Length, thickness
• CPC Class Codes: G01N 2291/0422 Shear waves, transverse waves, horizontally polarised waves
• CPC Class Codes: G01N 2291/0423 Surface waves, e.g. Rayleigh waves, Love waves
• CPC Class Codes: G01N 2291/0427 Flexural waves, plate waves, e.g. Lamb waves, tuning fork, cantilever
• CPC Class Codes: G01N 29/022 Fluid sensors based on microsensors, e.g. quartz crystal-microbalance [QCM], surface acoustic wave [SAW] devices, tuning forks, cantilevers, flexural plate wave [FPW] devices microdevices per se B81B
• CPC Class Codes: G01P 15/08 with conversion into electric or magnetic values
• CPC Class Codes: G10K 11/36 Devices for manipulating acoustic surface waves electro-acoustic amplifiers H03F13/00; networks comprising electro-acoustic elements H03H9/00
• CPC Class Codes: H03H 9/02228 Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer

Abstract

An ultrasonic sensor which has a thin planar sheet of material forming a Lamb wave propagation medium, the sheet having a thickness which is no greater than about twenty microns. The sensor also includes a Lamb wave generator for generating Lamb waves in the propagation medium and an output device for producing an electrical signal representative of the propagation characteristics of the Lamb waves propagating along the propagation medium. A measuring device is included in the sensor to measure selected characteristics of the output electrical signal. The propagation medium has some physical characteristics that are determined by the value of a measurand acting on the medium and the determined physical characteristics determine the propagation characteristics of the Lamb waves which are propagated along the medium. When the sensor is acted on by a measurand to determine the physical characteristics of the propagation medium, the characteristics of the electrical signal are also determined. The measuring device measures the electrical signal and provides an indication of the measurand value. Several sensing arrangements are also disclosed as well as methods for making the planar propagation medium.

Claims

1. An ultrasonic sensor comprising:

a composite structure comprising (a) a supporting frame of a first material and (b) a propagation medium comprising a thin planar sheet of a second, different material capable of supporting Lamb waves, supported peripherally by said supporting frame, said sheet having a thickness very much thinner than the wavelength of Lamb waves to be propagated thereon and having some physical characteristics determined by the value of a measurand acting thereon, said physical characteristics determining the propagation characteristics of Lamb waves to be propagated along the medium;

electrical means coupled to the thin planar sheet of said propagation medium for producing Lamb waves in the propagation medium;

output means on said sheet for producing an electrical signal representative of the determined propagation characteristics of the Lamb waves propagating along the propagation medium; and

measuring means for measuring selected characteristics of said electrical signal,

whereby when said sensor is acted on by a measurand, the physical characteristics of said propagation medium are determined and said electrical signal characteristics are also determined, so that said measuring means indicates the value of the measurand.

2. The sensor as recited in claim 1, wherein the electrical means includes means for producing both symmetrical and antisymmetrical Lamb waves in the propagation medium.

3. The sensor as recited in claim 2, wherein the propagation medium includes a layer of silicon nitride.

4. The sensor as recited in claim 3, wherein the propagation medium includes a layer of piezoelectric material.

5. The sensor as recited in claim 4, wherein

the output means includes a receiving transducer, coupled to the propagation medium, for producing an electrical signal representative of the Lamb waves propagating along said propagation medium,

the electrical means includes a launching transducer, coupled to the propagation medium, for generating Lamb waves in the propagation medium,

a feedback path between the receiving and launching transducers for providing feedback from the receiving transducer to the launching transducer, and

a feedback amplifier in the feedback path for amplifying said electrical signal produced by the receiving transducer and fed back to the launching transducer, the sensor forming an oscillator in which Lamb waves are continuously propagated along the propagation medium,

the measuring means includes frequency measuring means for measuring the oscillation frequency of said oscellator formed by said sensor measuring the oscillation frequency.

6. The sensor as recited in claim 5, including Lamb wave reflecting means for reflecting Lamb waves generated by the launching transducer that propagate in directions away from the receiving transducer, so that the reflected Lamb waves do not produce an output at the receiving transducer.

7. The sensor as recited in claim 5, wherein each transducer includes a pair of interdigital finger electrodes formed on one surface of the layer of piezoelectric material.

8. The sensor as recited in claim 7, wherein the propagation medium includes a ground plane comprising a layer of conducting material on the surface of the piezoelectric layer opposite the surface on which the transducer electrodes are deposited, said ground plane being restricted to areas substantially opposite the transducer electrodes.

9. The sensor as recited in claim 7, wherein there is a ground plane that is substantially coextensive with the propagation medium.

10. The sensor as recited in claim 8, wherein the piezoelectric material is zinc oxide.

11. The sensor as recited in claim 10, wherein there is a ground plane and it and the transducer electrodes are aluminum.

12. The sensor as recited in claim 11, wherein the silicon nitride layer is about 2.0 microns thick, the aluminum ground layer and transducer electrodes are each about 0.3 microns thick, and the layer of piezoelectric zinc oxide is 0.7 microns thick.

13. The sensor as recited in claim 1, including isolator means for isolating the propagation path from direct contact with the measurand.

14. The sensor as recited in claim 13, wherein the isolator means includes a flexible enclosure, filled with an inert gas, for enclosing the propagation medium,

whereby pressure applied to the enclosure is communicated to the propagation medium directly by the inert gas.

15. The sensor as recited in claim 1, wherein the propagation medium is detachably mounted on a holder structure which contains said electrical means and said measuring means.

16. The sensor as recited in claim 15, wherein the propagation medium is supported along at least a portion of its periphery by a silicon chip which is held by said holder, the entire propagation medium and chip structure being detachable from said holder and disposable.

17. The sensor as recited in claim 1, wherein the output means includes a plurality of receiving transducers, each receiving transducer coupled to said propagation medium for producing a separate signal representative of a set of Lamb waves propagating in said propagation medium,

the electrical means including a plurality of launching transducers, each coupled to the propagation medium for producing a separate set of Lamb waves in the propagation medium to be received by a different one of the receiving transducers,

a plurality of feedback paths, each said path connecting a receiving transducer to the launching transducer which produces the Lamb waves which said receiving transducer receives, for providing feedback from said receiving transducer to said launching transducer, and

a feedback amplifier in each feedback path for amplifying the signal produced by the particular receiving transducer, the sensor forming a plurality of feedback oscillators, and

wherein the measuring means includes a plurality of frequency measuring means, each for measuring the oscillation frequency of a different one of said feedback oscillators,

whereby the sensor may provide indications of several measurands simultaneously.

18. The sensor as recited in claim 1, wherein the propagation medium includes a layer having piezoelectric and semiconductor properties,

the output means including a receiving transducer coupled to the propagation medium for producing an electrical signal representative of the Lamb waves propagating along said propagation medium,

the electrical means includes a launching transducer, coupled to the propagation medium, for producing Lamb waves in the propagation medium,

a feedback path between the receiving and launching transducers for providing feedback from the receiving transducer to the launching transducer,

an electrode adjacent to and along said propagation medium, and

a voltage application means for applying a voltage to said electrode so that the Lamb waves travelling along said propagation path are amplified for feeding back to said launching transducer through the feedback path, the sensor forming an oscillator in which Lamb waves are continuously propagated along the propagation medium, and

wherein said measuring means includes frequency measuring means for measuring the oscillation frequency of said oscillator formed by said sensor.

19. The sensor as recited in claim 18, wherein the layer having piezoelectric and semiconductor properties comprises a single layer of material that exhibits both piezoelectric and semiconductive properties.

20. The sensor as recited in claim 18, wherein the layer having piezoelectric and semiconductor properties comprises two separate layers, a semiconductor layer of semiconductor material and a piezoelectric layer of piezoelectric material.

21. The sensor as recited in claim 1, wherein the propagation medium comprises a planar sheet of nonconducting and non-piezoelectric material, and

the electrical means includes electrode means for inducing a plurality of electrical fields at various positions across the nonconducting material, said fields having sufficient intensity to deform the material and thereby generate Lamb waves in the propagation medium with no need for a piezoelectric layer in the propagation medium.

22. The sensor as recited in claim 1, wherein the propagation medium includes a thin layer of black material for increasing the sensitivity of the medium to radiation.

23. The sensor as recited in claim 5, including:

an adjusting electrode on the outer surface of the propagation medium, adjacent said layer of silicon nitride; and

voltage source means for applying a voltage to the adjusting electrode,

whereby the voltage applied to the adjusting electrode alters the elastic stiffness of the medium.

24. The sensor as recited in claim 23, including a voltage varying means for varying the voltage to adjust the sensor output frequency to a desired value.

25. The sensor as recited in claim 1, wherein the electrical means includes a launching transducer for generating Lamb waves in the propagation medium, and a variable-frequency voltage source for driving the launching transducer and for producing a reference signal representative of the signal which drives the launching transducer,

the output means includes a receiving transducer for producing an electrical signal representative of the Lamb waves propagating along said propagation medium, and

the measuring means includes comparator means for comparing the reference signal to the signal produced by the receiving transducer and for providing outputs which indicate the value of the measurand.

26. The sensor as recited in claim 1, wherein the propagation medium includes a layer of transparent material, and

including an optical beam means for generating an optical beam and for directing said beam through the transparent material,

whereby the beam may interact with substances contacting or near the propagation medium.

27. The sensor as recited in claim 26, including a diffraction grating for introducing the optical beam into the transparent layer.

28. The sensor as recited in claim 26, wherein the layer of transparent material is silicon nitride.

29. The sensor as recited in claim 1, wherein at least a portion of the propagation medium is porous.

30. The sensor as recited in claim 29, wherein the porous portion of the propagation medium is also permeable.

31. The sensor as recited in claim 1, including proof mass means connected to the propagation medium for exerting a propagation characteristic changing force on the propagation medium when the sensor is accelerated in a sensing direction,

whereby when the sensor is accelerated in said sensing direction, said force changes the propagation characteristics of the propagation medium so that the magnitude of the acceleration can be determined by such characteristics changes.

32. The sensor as recited in claim 31, wherein said proof mass means comprises a plurality of proof masses attached to the propagation medium at random locations near the center of the propagation medium, and

wherein the sensing direction is perpendicular to the plane of the propagation medium.

33. The sensor as recited in claim 31, including pivot means for supporting said proof mass means and for allowing said proof mass means to pivot in response to acceleration in said sensing direction, and

wherein the proof mass means comprises at least two proof masses each connected to the propagation medium along opposite portions of the periphery of said propagation medium,

whereby said pivoting movement by said proof masses exerts said propagation characteristic changing force on the propagation medium.

34. The sensor as recited in claim 31, including support means for supporting the propagation medium at one end and for allowing said proof mass to move in response to an acceleration of the sensor in the sensing direction, and

wherein the proof mass means is connected to the propagation medium at an end opposite the end which includes the support means,

whereby said movement of said proof mass means in response to an acceleration in the sensing direction exerts said propagation characteristic changing force on the propagation medium.

35. The sensor as recited in claim 5, wherein the propagation medium includes along one of its outer surfaces and near the center of the propagation medium, a layer of magnetic material,

whereby when the sensor is placed in a magnetic field, the layer of magnetic material exerts a force on the propagation medium, affecting the propagation characteristics thereof and allowing the intensity of the magnetic field to be determined.

36. The sensor as recited in claim 35, wherein the magnetic material is permalloy.

37. The sensor as recited in claim 4, wherein the piezoelectric material is zinc oxide and is deposited so that its hexagonal crystal axes make an acute angle to the plane of the propagation medium,

whereby the electrical means produce shear horizontal Lamb waves in the propagation medium.

38. The sensor as recited in claim 21, wherein the electrode means introduces asymmetrical deformations in the propagation medium so as to generate either symmetrical or antisymmetrical Lamb waves in the propagation medium.

39. The sensor recited in claim 1, including:

a ground plane and a deformable nonconducting layer on the propagation medium, an electrode opposite the propagation medium and separated therefrom by said deformable nonconducting layer, and an adjustable voltage source having two terminals connected respectively to said electrode and to said ground plane,

whereby application of the voltage causes a change in the elastic stiffness of said deformable layer, thereby affecting the propagation velocity of the elastic waves along the propagation medium and permitting adjustment of the wave velocity along the medium to a desired value.