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Reducing particulates during semiconductor fabrication

  • US 5,131,460 A
  • Filed: 10/24/1991
  • Issued: 07/21/1992
  • Est. Priority Date: 10/24/1991
  • Status: Expired due to Fees
First Claim
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1. In a processing system including a pressurized processing chamber into which a substrate with a surface to be processed may be disposed, means for heating/cooling the opposite surface of said substrate including a heat exchanger disposed immediately adjacent said opposite surface, and means for directing a flow of gas between said heat exchanger and said opposite surface, said means for directing of flow of as including a source of said gas, means forming a primary path for said gas from said source to said substrate, and first valve means for controlling the flow of said gas through said primary path, an improved means for heating/cooling said substrate, comprising:

  • means communicating with said primary path and forming a secondary path for said gas from said primary path to said processing chamber; and

    second valve means disposed in said secondary path and operatively associated with said first valve means such that when said first valve means is open, said second valve means is closed and said gas flows from said source through said primary path means to said substrate, and when first valve means is closed said second valve means is open allowing gas contained in said primary path means downstream of said first valve means to flow through said secondary path means into said processing chamber.

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