Method for film thickness endpoint control

• US 5,131,752 A
• Filed: 06/28/1990
• Issued: 07/21/1992
• Est. Priority Date: 06/28/1990
• Status: Expired due to Fees

• Current Assignee: Tamarack Scientific Co., Inc. (SÜSS MicroTec SE)
• Original Assignee: Tamarack Scientific Co., Inc. (SÜSS MicroTec SE)
• Inventors: Yu, Chorng-Tao, Isaak, Kenneth H.
• Primary Examiner(s): Rosenberger, Richard A.
• Application Number:
  US07/545,997
• Time in Patent Office: 754 Days
• Field of Search: 356/364, 356/366, 356/367, 356/368, 356/369, 356/381, 356/382, 250/225, 156/626, 427/10
• US Class Current: 356/369
• CPC Class Codes: B24B 37/013 Devices or means for detecting lapping completion
• CPC Class Codes: G01B 11/0683 measurement during deposition or removal of the layer
• CPC Class Codes: G01N 21/211 Ellipsometry optical thickness measurement G01B11/06
• CPC Class Codes: H01L 22/26 Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement endpoint detection arrangements in CMP apparatus B24B37/013, in discharge apparatus H01J37/32

Abstract

Endpoint control of thickness of a film being deposited or etched is achieved by use of an ellipsometer that derives delta and psi coordinates of a polarized light beam reflected from the work piece during the course of processing. Measured film thickness is a function of the delta and psi coordinates and other parameters. Delta and psi coordinates of a selected end point (final film thickness) of the process are calculated, and an unbounded line through the endpoint perpendicular to the direction of a plot of delta and psi coordinates adjacent the endpoint is defined. As the processing continues, an ERROR is generated that becomes zero when measured delta and psi coordinates are on the line. When this error changes sign, in the appropriate cycle and within a reasonable range of the endpoint, the desired thickness has been attained, and the process is stopped. The improved film thickness endpoint control is used in a rapid thermal processing system wherein temperatures are changed at a rate of 100° C. or more to deposit or etch film on a substrate. Instead of using a fixed time and other fixed parameters to control film thickness, the described precision endpoint control is employed to obtain increased accuracy of control of the rapid thermal processing system.

Claims

1. A method of control of thickness of a film on a substrate comprising the steps of:

positioning the substrate in a chamber,

controlling environment in said chamber to change thickness of a film on the substrate,

employing an ellipsometer to measure delta and psi coordinates of said film,

determining delta and psi coordinates of an endpoint of desired thickness,

defining a control line through said endpoint in accordance with the equation A (D_e)+B (P_e)+C=0 wherein A, B, and C are constants of an unbounded line passing through the endpoint, and D_e and P_e are the delta and psi coordinates of said endpoint.

reading measured delta and psi coordinates to define measurement points as thickness of said film changes,

determining the relation between said control line and said measurement points, and

terminating change in said film thickness in response to said relation.

2. The method of claim 1 wherein said step of determining the relation between said control line and measurement points comprises defining an error in accordance with said equation.

3. The method of claim 2 wherein sad step of terminating comprises detecting a change in sign of said error.

4. The method of claim 3 including making a range check when a change in sign is sensed, and wherein said terminating step is performed in response to results of said range check.

5. The method of claim 2 wherein said control line is defined as a straight line through said endpoint and transverse to a line between said endpoint and a second point of thickness different than said endpoint thickness.

6. The method of claim 1 wherein said delta and psi coordinates vary cyclically as said film thickness varies, and including counting cycles of variation of said delta and psi coordinates, said step of terminating being performed upon count of a predetermined number of cycles.

7. A method for controlling thickness of a film or film portion on a substrate comprising the steps of:

positioning the substrate in a chamber,

controlling environment in said chamber to cause a change in thickness of a film on said substrate, said substrate and film thereon comprising a workpiece on which film is to be deposited or at least partially removed,

employing ellipsometry to measure delta and psi coordinates of said film, said step of measuring comprising;

directing light at said workpiece as said film thickness is changed, and

receiving light reflected from said workpiece,

determining delta and psi coordinates of an endpoint representing a predetermined target film thickness,

defining a control line through said endpoint and transverse to the direction of a plot of delta and psi coordinates of points representing film thickness near said endpoint, said last mentioned step comprising defining a control line through said endpoint in accordance with the equation A (D_e) +B (P_e)+C=0 wherein A, B, and C are constants of an unbounded line passing through the endpoint, and D_e and P_e are the measured delta and psi coordinates of said endpoint,

generating an error indicative of a relation between said line and points defined by said measured coordinates, and

employing said error to terminate change in film thickness.

8. The method of claim 7 wherein a film of said predetermined thickness is deposited on said substrate.

9. The method of claim 7 wherein a film on said substrate is at least partially etched to said predetermined thickness.

10. The method of claim 7 wherein said step of controlling environment comprises heating said substrate, and including the step of rapidly decreasing temperature of said wafer upon said step of terminating change in film thickness.

11. The method of claim 7 wherein said step of defining a control line comprises determining delta and psi coordinates of a second point having a thickness close to said predetermined thickness, and wherein said step of defining a control line further comprises defining such line in a direction substantially perpendicular to a line between said endpoint and said second point.

12. The method of claim 7 wherein said substrate comprises a semiconductor wafer and said chamber comprises an elongate kaleidoscope, said step of positioning the substrate comprising positioning said wafer in said kaleidoscope with the wafer transverse to the axis of said kaleidoscope.

13. The method of claim 12 wherein said step of controlling environment includes the step of rapidly heating said wafer in said kaleidoscope to a predetermined temperature, flowing into said kaleidoscope a gas that acts at said temperature to cause a change in thickness of film on said wafer, and including the step of rapidly decreasing temperature of wafer upon said step of terminating change in film thickness.

14. The method of claim 7 wherein said step of generating an error includes the step of sensing a change of sign of the error, and wherein occurrence of change in sign is employed to terminate change in film thickness.

15. The method of claim 14 including the step of making a range check when a change in sign is sensed and wherein said step of terminating is performed in response to results of said range check.

16. The method of claim 14 wherein said terminating step is performed only when said sensed change of sign occurs at a point within a predetermined range of said endpoint.

17. The method of claim 7 wherein said delta and psi coordinates vary cyclicly as said film thickness varies, and including the step of counting cycles of variation of said delta and psi coordinates, said step of terminating being performed upon a count of a predetermined number of said cycles.

18. A method for controlling thickness of film on a substrate comprising the steps of:

positioning the substrate in a chamber,

controlling environment within said chamber to cause a change in thickness of film on said substrate,

employing ellipsometry to measure delta and psi coordinates of said film,

determining delta and psi coordinates of an endpoint of desired thickness,

defining a control line through said endpoint in accordance with the equation A (D_e)+B (_e)+C=0 wherein A, B, and C are constants of an unbounded line passing through the endpoint, and D_e and P_e are the delta and psi coordinates of said endpoint,

said control line being a function of delta and psi that is zero for points on said control line passing through said endpoint and extending transverse to a plot of points of measured delta and psi coordinates near said endpoint

generating an error that represents said function of measured delta and psi coordinates, and

employing said error to signal attainment of said endpoint of desired thickness.

19. The method of claim 18 wherein said step of employing comprises sensing sign of said error and terminating said process upon occurrence of a change in sign of said error.

20. The method of claim 18 wherein said attainment of the endpoint of desired thickness is signalled upon occurrence of a change in sign of said error while the film thickness is within a predetermined range of said desired film thickness.

21. The method of claim 18 wherein said delta and psi coordinates vary cyclicly as film thickness varies, and wherein said step of signaling attainment of said endpoint of desired thickness is carried out when said error changes sign within a selected cycle of the cyclic variation of said delta and psi coordinates.

22. The method of claim 18 wherein said substrate is a silicon wafer and wherein said wafer is heated in inert gas at atmospheric pressure, at a rate of temperature increase of about 100°

C. per second, and including the step of flowing oxygen into the chamber.

23. A method of controlling thickness of a film or film portion on a substrate comprising the steps of:

positioning the substrate in a chamber,

controlling environment within said chamber to cause thickness of said film to change,

measuring ellipsometric parameters of said film as said film thickness changes, thereby defining points related to thickness of said film,

defining, in a plane of said parameters, an unbounded line having a predetermined relation to a desired endpoint of target thickness of said film in accordance with the equation defining a control line through said endpoint that is defined by he equation A (D_e)+B (P_e)+C=0 wherein A, B, and C are constants of an unbounded line passing through the endpoint, and D_e and P_e are the delta and psi coordinates of said endpoint and

terminating the changing of film thickness when measured parameters have a predetermined relation to said unbounded line.

24. The method of claim 23 wherein said line passes through an endpoint representing said target thickness.

25. The method of claim 23 wherein said step of controlling environment in said chamber comprises heating the substrate to a temperature within a range appropriate for depositing or etching film on the substrate, and introducing into said chamber a gas that acts at said temperature to cause a change in thickness of a film on said substrate.

26. The method of claim 25 wherein said substrate is a silicon wafer, and said process is carried out by heating said semiconductor wafer in an elongated kaleidoscope with said wafer positioned transverse to the axis of the kaleidoscope.

27. A method of controlling thickness of a film on a substrate comprising the steps of:

subjecting the substrate to an environment that causes a change in thickness of film on the substrate,

reflecting light from said film,

repetitively measuring first and second ellipsometric parameters of light reflected from said film that define coordinates of points related to a film thickness endpoint,

generating, in a coordinated system of said parameters, a locus of points for which a predetermined function of said first and second parameters is substantially zero, said step of generating comprising defining a control line through said endpoint in accordance with the equation A (D_e)+B (P_e)+C=0 wherein A, B, and C are constants of an unbounded line passing through the endpoint, and D_e and P_e are the delta and psi coordinates of said endpoint,

generating an error indicative of the relation between points defined by pairs of measured parameters and said locus, and

employing said error to terminate change of thickness of the film.

28. The method of claim 27 wherein said error is generated as values of said function for pairs of said measured parameters.

29. The method of claim 27 wherein said step of employing said error comprises detecting change of sign of said error.

30. The method of claim 27 including the step of generating an error equal to A (D_m)+B (P_m)+C, sensing a change in algebraic sign of said error, and terminating said change in thickness when (a) said algebraic sign changes, and (b) said measured parameters are within a predetermined range of delta and psi coordinates of said endpoint.

31. The method of claim 27 wherein said film is silicon dioxide to be grown on the substrate, and wherein said substrate comprises a silicon wafer, and including the steps of positioning said wafer within an elongated kaleidoscope with said wafer transverse to the kaleidoscope axis, introducing a gas into said chamber, rapidly raising the temperature of said wafer to a point at which the gas reacts with the wafer, and terminating growth of the film by rapidly lowering the temperature of said wafer.

32. Apparatus for rapid thermal processing of a workpiece comprising:

a processing chamber,

heater means for raising the temperature of a workpiece in said chamber,

means in said chamber for supporting a workpiece to be heated by said heating means,

means for introducing gas into said chamber,

an ellipsometer comprising;

polarizer module means for directing a polarized light beam into said chamber to a point on a workpiece supported on said workpiece support means,

analyzer module means or receiving light reflected from a workpiece mounted on said workpiece support means,

ellipsometer control means for generating measured delta and psi coordinates of light received by said analyzer module means, and

endpoint control means responsive to said ellipsometer control means for receiving delta and psi coordinates measured by said ellipsometer during processing of a heated workpiece within said chamber, said endpoint control means comprising;

means for defining a control line through a target endpoint of desired thickness in accordance with the equation A (D_e)+B (_e) +C=0 wherein A, B, and C are constants of an unbounded line passing through the endpoint, and D_e and P_e are the delta and psi coordinates of said endpoint,

detecting means for detecting a relation between a pair of measured delta and psi coordinates and said control line, and

means responsive to said detecting means for providing an end of process signal.

33. The apparatus of claim 32 including means for determining delta and psi coordinates of said target endpoint of desired thickness, said means for defining said control line comprising means for defining said control line transverse to the direction of a plot of delta and psi coordinates of thickness at said endpoint, means for generating an error indicative of a relation of said control line to a point defined by said measured delta and psi coordinates, and means responsive to said error for terminating change in film thickness.

34. The apparatus of claim 33 wherein said means for terminating comprises means for rapidly decreasing temperature of said substrate.

35. The apparatus of claim 34 wherein said chamber comprises an elongated kaleidoscope.

36. Rapid thermal processing apparatus comprising:

lamp means,

means to support a workpiece, and

means to optically couple said lamp means to a workpiece supported on said workpiece support means, to effect relatively uniform heating of said workpiece, said optical coupling means being a hollow, integrating light pipe that extends at lest substantially to said workpiece support means and that causes the intensity of light from said lamp means to be relatively uniform across said light pipe at said workpiece, said lamp means being disposed within said light pipe, the aspect ratio in aid light pipe being at least 1,

means for directing a beam of polarized light at a workpiece on said workpiece support means,

means for receiving polarized light reflected from said workpiece,

ellipsometric means for computer delta and psi ellipsometric coordinates of received light reflected from said workpiece,

means for determining delta and psi ellipsometric coordinates of a target endpoint of desired thickness of a film on aid substrate,

means for defining a control line through said target endpoint transverse to the direction of a plot of delta and psi coordinates of film thickness at said endpoint in accordance with the equation A (D_e)+B (P_e)+C=0 wherein A, B, and C are constants of an unbounded line passing through the endpoint, and D_e and P_e are the delta and psi coordinates of said endpoint,

means for reading measured delta and psi coordinates as thickness of film on said substrate is varied,

means for generating an error signal representing a relation between said line and said measured coordinates,

means for sensing a change in sign of said error signal,

means for generating a stop signal in response to a sensed change of said sign, and

means for deenergizing said lamp means and rapidly decreasing temperature of said substrate upon occurrence of said change of sign.

37. The apparatus of claim 36 wherein said workpiece comprises a silicon wafer, wherein said lamp means comprises means for increasing the temperature of said wafer at the rate of about 100°

C. per second to a temperature in the order of about 1,000°

C., and further including means for flowing oxygen into said chamber.