Growth-modified thermal oxidation for thin oxides

• US 5,132,244 A
• Filed: 06/12/1991
• Issued: 07/21/1992
• Est. Priority Date: 12/21/1988
• Status: Expired due to Term

• Current Assignee: AT&T, Inc.
• Original Assignee: AT&T, Inc.
• Inventors: Roy, Pradip K.
• Primary Examiner(s): WILCZEWSKI, MARY A
• Application Number:
  US07/714,360
• Time in Patent Office: 405 Days
• Field of Search: 437/10, 437/13, 437/235, 437/238, 437/239, 437/937, 437/946, 437/244, 437/243, 148/DIG. 118
• US Class Current: 438/477
• CPC Class Codes: H01L 21/02238 silicon in uncombined form, i.e. pure silicon
• CPC Class Codes: H01L 21/02255 formation by thermal treatment H01L21/02252 takes precedence; after treatment of an insulating film H01L21/3105 and subgroups
• CPC Class Codes: H01L 21/02301 in-situ cleaning
• CPC Class Codes: H01L 21/02312 treatment by exposure to a gas or vapour
• CPC Class Codes: H01L 21/31662 of silicon in uncombined form
• CPC Class Codes: Y10S 148/118 Oxide films
• CPC Class Codes: Y10S 438/974 Substrate surface preparation

Abstract

A method is disclosed for growing relatively thin (e.g., <250 Å) thermal oxides which results in lowering the defect density, mobile ion concentration, interface trapped charge density, and stress of the structure. In particular, the prior art oxidation process is modified to include in situ preoxidation silicon surface treatments to improve the silicon nucleation surface. For example, gettering operations may be performed to remove metal-ion contaminants from the silicon nucleation surface, and high temperature annealing operations may be performed to remove any local stress gradients which exist in the silicon substrate during the initial stages of oxidation. By improving the silicon nucleation surface, the subsequently grown thin oxide will be improved in terms of the qualities mentioned above.

Claims

1. A method of fabricating a semiconductor structure including a relatively thin thermal oxide layer grown on a silicon surface, the method including the steps of:

a) providing a silicon surface at a first ambient temperature in the range of 600°

-750°

C.;

b) increasing the ambient temperature to a second value required for oxidation in the range of 900°

-950°

C.;

c) initiating and maintaining oxide growth by subjecting the silicon surface to an oxygen ambient for a period of time related to the desired thickness of the grown oxide; and

d) removing the oxygen ambient to terminate the oxide growth

characterized in that the process includes performing an in situ preoxidation silicon surface treatment before initiating the oxide growth of step c), the steps including

1) gettering the silicon surface in a chlorine-containing ambient, at the first ambient temperature, to remove contaminants at said silicon surface; and

2) annealing, at the second temperature, the silicon surface gettered in step

     1), the annealing to minimize local stress variations in said silicon surface.

2. The method of claim 1 wherein preparation step 1) is performed prior to step b) and preparation step 2) is performed after step b).

3. The method of claim 1 wherein in performing preparation step 1), the chlorine-containing ambient is chosen from the group consisting of hydrochloric acid, trichloroethane and trichloroethene.

4. The method of claim 1 wherein in performing preparation step 2), an argon ambient is used.