Light-emitting diode array with projections

• US 5,132,751 A
• Filed: 04/09/1991
• Issued: 07/21/1992
• Est. Priority Date: 06/08/1990
• Status: Expired due to Term

• Current Assignee: Eastman Kodak Company
• Original Assignee: Eastman Kodak Company
• Inventors: Sasagawa, Teruo, Ohta, Hirokazu, Kazuno, Tadao, Shibata, Naoki
• Primary Examiner(s): MINTEL, WILLIAM A
• Application Number:
  US07/682,298
• Time in Patent Office: 469 Days
• Field of Search: 357/17, 357/45, 357/16, 357/55, 357/56, 357/52, 357/52 T, 372/48, 372/50
• US Class Current: 257/93
• CPC Class Codes: H01L 27/153 in a repetitive configuration, e.g. LED bars
• CPC Class Codes: H01L 33/025 Physical imperfections, e.g. particular concentration or distribution of impurities
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

A light-emitting diode array in which the light-emitting surface for external output of light from the light-emitting layer is processed to give it a slope, for example, which by increasing the critical angle of the internal reflection between the active layer and the air raises the external light output efficiency.

Claims

1. A light-emitting diode array comprised of a multiplicity of light-emitting diodes arranged on a single substrate, each light-emitting diode having a light-emitting layer which emits light when subjected to carrier injection, and a light-emitting surface for external output of light from the light-emitting layer, wherein the light-emitting surface of each of the light-emitting diodes is provided with a multiplicity of projections, each of said projections having two sides which are at the same angle to the light-emitting surface and having a pitch so as to reduce the amount of light reflected by the light emitting surface and thereby increase the output of emitted light.

2. The array of claim 1 wherein each light-emitting diode is of a heterojunction type.

3. The array of claim 1 wherein each light-emitting diode is of a homojunction type.

4. The array of claim 1 wherein the sides of the projections are at an angle of 45°

with respect to the light-emitting surface.

5. The array of claim 1 wherein the sides of the projections are perpendicular to the light-emitting surface.

6. The array of claim 1 wherein the projections have a pitch ranging from less than one micron to several microns.

7. The array of claim 1 wherein the projections are arranged in concentric circles on the light emitting surface.

11. The array of claim 7 in which the projections have sides which are at an angle of about 45°

with respect to the light-emitting surface.

12. The array of claim 7 in which the projections have sides which are substantially perpendicular to the light-emitting surface.

8. A light-emitting diode array comprised of a multiplicity of light-emitting diodes arranged on a single substrate, each light-emitting diode have a light-emitting layer which emits light when subjected to carrier injection, and a light-emitting surface for external output of light from the light-emitting layer wherein the light-emitting surface of each of the light-emitting diodes is provided with a multiplicity of projections extending in concentric circles on the light-emitting surface, the projections being selected to reduce the amount of light reflected by the light emitting surface and thereby increase the output of emitted light.

9. The array of claim 8 in which the array comprises a substrate of a semiconductor material of one conductivity type having a pair of opposed surfaces, a buffer layer of a semiconductor material of the one conductivity type on one of the surfaces of the substrate, spaced regions of the opposite conductivity type in the buffer layer, a separate electrode on the surface of each of the regions, an electrode on the other surface of the substrate and the projections are on the surface of the regions.

10. The array of claim 8 in which the array comprises a substrate of a semiconductor material of one conductivity type having a pair of opposed surfaces, a first layer of a semiconductor material of the one conductivity type on one of the surfaces of the substrate, the first layer having a multiplicity of mesas projecting therefrom, a second layer of a semiconductor material of the opposite conductivity type on each of the mesas of the first layer, a separate electrode on each of the second layers, an electrode on the other surface of the substrate and the projections are on the second layers.