Thin film silicon semiconductor device and process for producing thereof

• US 5,132,754 A
• Filed: 07/21/1988
• Issued: 07/21/1992
• Est. Priority Date: 07/27/1987
• Status: Expired due to Term

• Current Assignee: Nippon Telegraph and Telephone Corporation
• Original Assignee: Nippon Telegraph and Telephone Corporation
• Inventors: Okamoto, Akio, Serikawa, Tadashi, Shirai, Seiichi, Suyama, Shirou
• Primary Examiner(s): Jackson, Jr., Jerome
• Assistant Examiner(s): Dang, Hung Xuan
• Application Number:
  US07/222,966
• Time in Patent Office: 1,461 Days
• Field of Search: 357/60, 357/59 A, 357/59 E, 357/23.7, 357/4
• US Class Current: 257/57
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02422 Non-crystalline insulating materials, e.g. glass, polymers
• CPC Class Codes: H01L 21/02433 Crystal orientation
• CPC Class Codes: H01L 21/0245 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02609 Crystal orientation
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/321 After treatment
• CPC Class Codes: H01L 29/04 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30
• CPC Class Codes: H01L 29/78675 with normal-type structure, e.g. with top gate

Abstract

A thin film silicon semiconductor device provided on a substrate according to the present invention comprises a thin polycrystalline silicon film having a lattice constant smaller than that of a silicon single crystal and a small crystal grain size. This thin polycrystalline silicon film can be obtained by depositing a thin amorphous silicon film in an inert gas having a pressure of 3.5 Pa or lower by a sputtering deposition method and annealing the thin amorphous silicon film for a short time of 10 seconds or less to effect polycrystallization thereof. A thin film silicon semiconductor device comprising such a thin polycrystalline silicon film having a small lattice constant has excellent characteristics including a carrier mobility of 100 cm² /V·s or higher.

Claims

1. A thin film silicon semiconductor device comprising:

an insulating substrate;

a thin polycrystalline silicon film disposed on a surface of said insulating substrate, said thin polycrystalline silicon film comprising fine crystal grains having a lattice constant smaller than the lattice constant of a bulk single crystal of silicon;

a gate insulating film disposed on said thin polycrystalline silicon film;

a gate electrode disposed on said gate insulating film; and

source and drain electrodes formed in respective portions of said thin polycrystalline silicon film, said gate electrode being interposed between said source and drain electrodes.

2. A thin film silicon semiconductor device as claimed in claim 1, wherein said thin polycrystalline silicon film contains boron in a concentration of 10¹⁴ to 10¹⁷ cm³.

3. A thin film silicon semiconductor device as claimed in claim 1, wherein said thin polycrystalline silicon film contains as an impurity at least one element selected from phosphorous and arsenic in a total impurity concentration of 10¹⁴ to 10¹⁷ /cm³.

4. A thin film silicon semiconductor device as claimed in claim 1, wherein the ratio of the lattice constant of said fine crystal grains to that of said bulk single crystal of silicon is within a range from 0.996 to 0.999.

5. A thin film silicon semiconductor device as claimed in claim 1, wherein said fine crystal grains have a [111] axis oriented in a direction substantially perpendicular to the surface of said insulating substrate.

6. A thin film silicon semiconductor device as claimed in claim 1, wherein said insulating substrate is made of glass.

7. A thin film silicon semiconductor device as claimed in claim 1, wherein said gate insulating film is composed of one of silicon oxide and silicon nitride.

8. A thin film silicon semiconductor device as claimed in claim 1, wherein said source and drain electrodes are formed by doping said thin polycrystalline silicon film with an impurity.

9. A thin film silicon semiconductor device comprising:

an insulating substrate;

a first insulating layer disposed on said substrate;

a thin polycrystalline silicon film disposed on said first insulating layer, said thin polycrystalline silicon film comprising fine crystal grains having a lattice constant smaller than that of a bulk single crystal of silicon, said thin polycrystalline silicone film having channel, source and drain regions, said channel region being interposed between said source and drain regions;

a second insulating layer disposed on said channel region; and

a gate electrode disposed on said second insulating layer.

10. A thin film silicon semiconductor device as claimed in claim 9, wherein said channel region is doped with boron.

11. A thin film silicon semiconductor device as claimed in claim 9, wherein said channel region is doped with at least one element selected from phosphorus and arsenic.

12. A thin film silicon semiconductor device comprising:

an insulating substrate;

a first insulating layer disposed on a surface of said substrate;

a gate electrode disposed on said first insulating layer;

a second insulating layer disposed on said gate electrode and said first insulating layer;

a thin polycrystalline silicon film disposed on said second insulating layer, said thin polycrystalline silicon film comprising a large number of fine crystal grains having a lattice constant smaller than that of a bulk single crystal of silicon, said thin polycrystalline silicon film having a source electrode region, a drain electrode region and a channel region, the channel region being interposed between said source electrode region and said drain electrode region.

13. A thin film silicon semiconductor device as claimed in claim 12, wherein said source electrode and drain electrode region are formed by introducing an impurity into said thin polycrystalline silicon film.