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MOS semiconductive device

  • US 5,134,451 A
  • Filed: 04/13/1990
  • Issued: 07/28/1992
  • Est. Priority Date: 04/17/1989
  • Status: Expired due to Term
First Claim
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1. A semiconductor device comprising:

  • a substrate having a first conductivity type;

    a source region and a drain region, each having a second conductivity type, separately disposed within a surface of said substrate, said source and drain regions defining a channel region therebetween;

    a single layer, comprising a metal material, extending over said substrate;

    said single layer having first and second metal silicide portions covering said source region and drain region, and a metal oxide portion extending over said channel region; and

    a gate electrode extending over said metal oxide portion.

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