Thin soft magnetic film and method of manufacturing the same

• US 5,135,818 A
• Filed: 03/26/1990
• Issued: 08/04/1992
• Est. Priority Date: 03/28/1989
• Status: Expired due to Fees

• Current Assignee: Hitachi Maxell Limited (Hitachi, Ltd.)
• Original Assignee: Hitachi Maxell Limited (Hitachi, Ltd.)
• Inventors: Hosono, Akihiko, Shimada, Yutaka, Fujiwara, Hideo
• Primary Examiner(s): Robinson, Ellis P.
• Assistant Examiner(s): Turner, Archene A.
• Application Number:
  US07/498,415
• Time in Patent Office: 862 Days
• Field of Search: 428/692, 428/693, 428/611, 428/678, 428/681, 428/457, 428/469, 360/125, 360/127, 427/128, 427/130, 427/132, 148/307, 148/308
• US Class Current: 428/812
• CPC Class Codes: H01F 10/14 containing iron or nickel H01F10/126 , H01F10/13, H01F10/16 take precedence
• CPC Class Codes: H01F 10/28 characterised by the composition of the substrate
• CPC Class Codes: Y10T 428/115 Magnetic layer composition
• CPC Class Codes: Y10T 428/12951 Fe-base component
• CPC Class Codes: Y10T 428/31678 Of metal

Abstract

Disclosed is a soft magnetic film comprising a thin film of magnetic material of cubic symmetry, characterized in that crystal face (111) of the thin film is oriented substantially parallel to the surface of the thin film.

Claims

1. A thin soft magnetic film of high magnetic permeability exhibiting isotropic magnetostriction which comprises a thin film of magnetic material of cubic crystallographic symmetry, formed on an underlayer with corresponding crystallographic symmetry to the magnetic material, the plane (111) of the thin film of magnetic material being oriented substantially in parallel to the surface of the thin film.

2. The thin soft magnetic film according to claim 1, wherein said magnetic material of cubic crystallographic symmetry is composed of iron containing silicon and said underlayer is composed of a material selected from the group consisting of Zn-Se compound, Cd-S compound, Cu-Br compound, Mn-Se compound, Hg-S compound, Al-As compound, and Ga-As compound.

3. The thin soft magnetic film according to claim 1, wherein, when a magnetostriction coefficient in the <

100>

direction of said magnetic material of cubic crystallographic symmetry is λ

₁₀₀ and a magnetostriction coefficient in the <

111>

direction of said magnetic material of cubic crystallographic symmetry is λ

₁₁₁, the following relationship exists;

space="preserve" listing-type="equation">|λ

.sub.100 +2λ

.sub.111 |<

2/3{|λ

.sub.100 |+2|λ

.sub.111 |}.

4. The thin soft magnetic film according to claim 1, wherein, when a magnetostriction coefficient in the <

100>

direction of said magnetic material of cubic crystallographic symmetry is λ

₁₀₀ and a magnetostriction coefficient in the <

111>

direction of said magnetic material of cubic crystallographic symmetry is λ

₁₁₁, the following relationship exists;

space="preserve" listing-type="equation">|λ

.sub.100 +2λ

.sub.111 |<

1/3{|λ

.sub.100 |+2|λ

.sub.111 |}.

5. The method of manufacturing a thin soft magnetic film, which comprises forming a thin film of a magnetic material of cubic crystallographic symmetry on an underlayer corresponding to the magnetic material, both the thin film of a magnetic material and the underlayer having the same lattice constant, while heating the underlayer at 300°

C. or higher, thereby making the plane (111) of the thin film of the magnetic material orient substantially in parallel to the surface of the thin film.

6. The method of manufacturing a thin soft magnetic film according to claim 5, wherein said underlayer is composed of a material selected from the group consisting of Zn-Se compound, Cd-S compound, Cu-Br compound, Mn-Se compound, Hg-S compound, Al-As compound, and Ga-As compound and said magnetic material of cubic crystallographic symmetry is composed of iron containing silicon.