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FET sensor apparatus of flow-cell adaptive type and method of manufacturing the same

  • US 5,138,251 A
  • Filed: 09/28/1990
  • Issued: 08/11/1992
  • Est. Priority Date: 10/04/1989
  • Status: Expired due to Fees
First Claim
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1. An FET sensor apparatus of flow-cell adaptive type, comprising:

  • a sensor comprising a field-effect transistor formed on a semiconductor substrate, the semiconductor substrate having two major surfaces and a predetermined crystal plane, and the field-effect transistor having at least a gate portion arranged on one of the major surfaces of the semiconductor substrate;

    a base member having a through hole in which said sensor is fitted; and

    support means for supporting said sensor in the through hole in watertight fashion, with said gate portion exposed through an end of said through hole;

    wherein said through hole of said base member has a shape complementary to that of said sensor; and

    wherein said through hole of said base member has a tapered surface and said sensor is exposed through the opening of said through hole having a smaller diameter.

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