FET sensor apparatus of flow-cell adaptive type and method of manufacturing the same

• US 5,138,251 A
• Filed: 09/28/1990
• Issued: 08/11/1992
• Est. Priority Date: 10/04/1989
• Status: Expired due to Fees

• Current Assignee: Olympus Optical Company Ltd. (Olympus Corporation)
• Original Assignee: Olympus Optical Company Ltd. (Olympus Corporation)
• Inventors: Shinohara, Etsuo, Koshiishi, Kiyozou
• Primary Examiner(s): Wieder, Kenneth A.
• Assistant Examiner(s): BROWN, GLENN WARNER
• Application Number:
  US07/590,467
• Time in Patent Office: 683 Days
• Field of Search: 324/438, 324/439, 324/450, 324/71.5, 204/416, 204/418
• US Class Current: 324/71.5
• CPC Class Codes: G01N 27/414 Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
• CPC Class Codes: G01N 33/4915 using flow cells flow cytometry G01N15/14

Abstract

An FET sensor apparatus comprising a sensor, a base member, and a support. The sensor comprises a semiconductor substrate having a predetermined crystal plane, a field-effect transistor formed on the semiconductor substrate, and a gate portion arranged on at least one of the major surfaces of the semiconductor substrate. The base member has a through hole in which the field-effect transistor is fitted. The support supports the sensor in the through hole in watertight fashion, with said gate portion exposed through an end of the hole.

Claims

1. An FET sensor apparatus of flow-cell adaptive type, comprising:

a sensor comprising a field-effect transistor formed on a semiconductor substrate, the semiconductor substrate having two major surfaces and a predetermined crystal plane, and the field-effect transistor having at least a gate portion arranged on one of the major surfaces of the semiconductor substrate;

a base member having a through hole in which said sensor is fitted; and

support means for supporting said sensor in the through hole in watertight fashion, with said gate portion exposed through an end of said through hole;

wherein said through hole of said base member has a shape complementary to that of said sensor; and

wherein said through hole of said base member has a tapered surface and said sensor is exposed through the opening of said through hole having a smaller diameter.

2. The FET sensor apparatus according to claim 1, wherein said through hole includes a tapered small-diameter portion and a tapered large-diameter portion, and said sensor is fitted in the large-diameter portion of said through hole.

3. The FET sensor apparatus according to claim 1, further comprising material sensitive to a specific material, said sensitive material filling in the through hole of said base member to cover on the gate portion of said sensor.

4. The FET sensor apparatus according to claim 1, wherein said sensor is hexagonal in shape with two elongate opposed sides.

5. The FET sensor apparatus according to claim 1, wherein said base member has an electrode window aligned with said through hole.

6. An FET sensor apparatus of flow-cell adaptive type, comprising:

a sensor comprising a field-effect transistor formed on a semiconductor substrate, the semiconductor substrate having two major surfaces and a predetermined crystal plane, and the field-effect transistor having at least a gate portion arranged on one of the major surfaces of the semiconductor substrate;

a base member having a through hole in which said sensor is fitted; and

support means for supporting said sensor in the through hole in watertight fashion, with said gate portion exposed through an end of said through hole;

wherein said base member is made of a semiconductor substrate of the same type as said semiconductor substrate of said sensor;

the through hole of said base member has a shape complementary to that of said sensor; and

wherein the through hole of said base member is tapered, and said sensor has a gate portion exposed through the smaller end of the through hole.

7. The FET sensor apparatus according to claim 6, wherein said semiconductor substrate forming said base member has an insulation film which covers least that portion which has said through hole.

8. The FET sensor apparatus according to claim 6, wherein said tapered through hole includes a tapered large-diameter portion and a tapered small-diameter portion, and said sensor is fitted in the tapered large-diameter portion of said through hole.

9. An FET apparatus of flow-cell adaptive type, comprising:

a sensor comprising a field-effect transistor formed on a semiconductor substrate, the semiconductor substrate having two major surfaces and a predetermined crystal plane, and the field-effect transistor having at least a gate portion arranged on one of the major surfaces of the semiconductor substrate;

a base member having a through hole in which said sensor is fitted; and

support means for supporting said sensor in the through hole in watertight fashion, with said gate portion exposed through an end of said through hole;

wherein said base member has a passage for a liquid sample, and said through hole opens to said passage; and

wherein said base member has a groove communicating with said passage, and a reference electrode is formed on the bottom of said groove.

10. An FET sensor apparatus of flow-cell adaptive type, comprising:

a sensor comprising a plurality of field-effect transistors hexagonal in shape with two elongate opposed sides formed on a semiconductor substrate, the semiconductor substrate having two major surfaces and a predetermined crystal plane, and each of the plurality of hexagonally-shaped field-effect transistors having at least a gate portion arranged on one of the major surfaces;

a base member having a plurality of through holes in which said hexagonally-shaped field-effect transistors are fitted, respectively; and

support means for supporting said hexagonally-shaped field-effect transistors in said through holes in watertight fashion, with said gate portions exposed through an end of said through hole;

wherein said through hole of said base member has a shape complementary to that of said sensor; and

wherein said through hole of said base member has a tapered surface, and said sensor is exposed through the opening of said through hole having a smaller diameter.

11. The FET sensor apparatus according to claim 10, wherein said field-effect transistors are electrically isolated from one another, by means of pn-junction isolation.

12. The FET sensor apparatus according to claim 10, wherein said base member is made of a semiconductor substrate of the same type of said semiconductor substrate on which said field-effect transistors are formed.

13. The FET sensor apparatus according to claim 12, wherein said semiconductor substrate forming said base member has an insulation film which covers at least those portions which have said through holes.

14. A method of manufacturing an FET sensor apparatus of flow-cell adaptive type, said method comprising the steps of:

etching one major surface of a semiconductor substrate in a semiconductor-manufacturing process, thereby forming a bottomed hole in the major surface, which has a predetermined diameter and a predetermined depth;

etching said semiconductor substrate, thereby forming a through hole in the bottom of said bottomed hole, which has a diameter less than that of said bottomed hole, thus forming a gate window; and

inserting a sensor into, and fixing the same in, the gate window of said semiconductor substrate, said sensor comprising a semiconductor substrate having the same crystal plane as the semiconductor substrate.

15. The method according to claim 14, further comprising the step of forming an insulation film on at least those portions which have said through holes, after said gate window has been formed.

16. A flow-cell adaptive type FET sensor apparatus, comprising:

a sensor comprising a field-effect transistor hexagonal in shape with two elongate opposed sides formed on a first semiconductor substrate having a predetermined crystal face, a gate portion of said field-effect transistor being arranged on at least one of the side surfaces of said semiconductor substrate;

a base member having a through hole, in which the sensor is fitted, formed by processing a second semiconductor substrate having a predetermined crystal face by use of an anisotropic etching operation; and

support means for adhesively supporting said sensor in the through hole of said base member with said gate portion being exposed through an opening of said through hole when said sensor is inserted into said through hole of said base member.