FET sensor apparatus of flow-cell adaptive type and method of manufacturing the same
First Claim
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1. An FET sensor apparatus of flow-cell adaptive type, comprising:
- a sensor comprising a field-effect transistor formed on a semiconductor substrate, the semiconductor substrate having two major surfaces and a predetermined crystal plane, and the field-effect transistor having at least a gate portion arranged on one of the major surfaces of the semiconductor substrate;
a base member having a through hole in which said sensor is fitted; and
support means for supporting said sensor in the through hole in watertight fashion, with said gate portion exposed through an end of said through hole;
wherein said through hole of said base member has a shape complementary to that of said sensor; and
wherein said through hole of said base member has a tapered surface and said sensor is exposed through the opening of said through hole having a smaller diameter.
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Abstract
An FET sensor apparatus comprising a sensor, a base member, and a support. The sensor comprises a semiconductor substrate having a predetermined crystal plane, a field-effect transistor formed on the semiconductor substrate, and a gate portion arranged on at least one of the major surfaces of the semiconductor substrate. The base member has a through hole in which the field-effect transistor is fitted. The support supports the sensor in the through hole in watertight fashion, with said gate portion exposed through an end of the hole.
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Citations
16 Claims
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1. An FET sensor apparatus of flow-cell adaptive type, comprising:
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a sensor comprising a field-effect transistor formed on a semiconductor substrate, the semiconductor substrate having two major surfaces and a predetermined crystal plane, and the field-effect transistor having at least a gate portion arranged on one of the major surfaces of the semiconductor substrate; a base member having a through hole in which said sensor is fitted; and support means for supporting said sensor in the through hole in watertight fashion, with said gate portion exposed through an end of said through hole; wherein said through hole of said base member has a shape complementary to that of said sensor; and wherein said through hole of said base member has a tapered surface and said sensor is exposed through the opening of said through hole having a smaller diameter. - View Dependent Claims (2, 3, 4, 5)
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6. An FET sensor apparatus of flow-cell adaptive type, comprising:
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a sensor comprising a field-effect transistor formed on a semiconductor substrate, the semiconductor substrate having two major surfaces and a predetermined crystal plane, and the field-effect transistor having at least a gate portion arranged on one of the major surfaces of the semiconductor substrate; a base member having a through hole in which said sensor is fitted; and support means for supporting said sensor in the through hole in watertight fashion, with said gate portion exposed through an end of said through hole; wherein said base member is made of a semiconductor substrate of the same type as said semiconductor substrate of said sensor; the through hole of said base member has a shape complementary to that of said sensor; and wherein the through hole of said base member is tapered, and said sensor has a gate portion exposed through the smaller end of the through hole. - View Dependent Claims (7, 8)
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9. An FET apparatus of flow-cell adaptive type, comprising:
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a sensor comprising a field-effect transistor formed on a semiconductor substrate, the semiconductor substrate having two major surfaces and a predetermined crystal plane, and the field-effect transistor having at least a gate portion arranged on one of the major surfaces of the semiconductor substrate; a base member having a through hole in which said sensor is fitted; and support means for supporting said sensor in the through hole in watertight fashion, with said gate portion exposed through an end of said through hole; wherein said base member has a passage for a liquid sample, and said through hole opens to said passage; and wherein said base member has a groove communicating with said passage, and a reference electrode is formed on the bottom of said groove.
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10. An FET sensor apparatus of flow-cell adaptive type, comprising:
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a sensor comprising a plurality of field-effect transistors hexagonal in shape with two elongate opposed sides formed on a semiconductor substrate, the semiconductor substrate having two major surfaces and a predetermined crystal plane, and each of the plurality of hexagonally-shaped field-effect transistors having at least a gate portion arranged on one of the major surfaces; a base member having a plurality of through holes in which said hexagonally-shaped field-effect transistors are fitted, respectively; and support means for supporting said hexagonally-shaped field-effect transistors in said through holes in watertight fashion, with said gate portions exposed through an end of said through hole; wherein said through hole of said base member has a shape complementary to that of said sensor; and wherein said through hole of said base member has a tapered surface, and said sensor is exposed through the opening of said through hole having a smaller diameter. - View Dependent Claims (11, 12, 13)
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14. A method of manufacturing an FET sensor apparatus of flow-cell adaptive type, said method comprising the steps of:
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etching one major surface of a semiconductor substrate in a semiconductor-manufacturing process, thereby forming a bottomed hole in the major surface, which has a predetermined diameter and a predetermined depth; etching said semiconductor substrate, thereby forming a through hole in the bottom of said bottomed hole, which has a diameter less than that of said bottomed hole, thus forming a gate window; and inserting a sensor into, and fixing the same in, the gate window of said semiconductor substrate, said sensor comprising a semiconductor substrate having the same crystal plane as the semiconductor substrate. - View Dependent Claims (15)
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16. A flow-cell adaptive type FET sensor apparatus, comprising:
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a sensor comprising a field-effect transistor hexagonal in shape with two elongate opposed sides formed on a first semiconductor substrate having a predetermined crystal face, a gate portion of said field-effect transistor being arranged on at least one of the side surfaces of said semiconductor substrate; a base member having a through hole, in which the sensor is fitted, formed by processing a second semiconductor substrate having a predetermined crystal face by use of an anisotropic etching operation; and support means for adhesively supporting said sensor in the through hole of said base member with said gate portion being exposed through an opening of said through hole when said sensor is inserted into said through hole of said base member.
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Specification