Sub-kelvin resistance thermometer
First Claim
1. A device used in accurate temperature measurement of an object comprising:
- a heat sink wafer;
a first conducting pad near one end of said heat sink wafer and a second conducting pad near the other end of said heat sink wafer;
an oblong doped semiconductor crystal;
said oblong doped semiconductor crystal having a third conducting pad covering or nearly covering its top surface and a fourth conducting pad covering or nearly covering its bottom surface;
said oblong doped semiconductor crystal affixed to said heat sink wafer by having said fourth conducting pad affixed to said first conducting pad;
conducting means between said second and third conducting pads; and
current and voltage applying means communicating with said first and second conducting pads whereby the change in resistance of said oblong doped semiconductor crystal is used to facilitate the temperature measurement of said object.
1 Assignment
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Accused Products
Abstract
A device capable of accurate temperature measurement down to 0.01° K. of an object whose temperature is to be measured consisting of a heat sink wafer a first conducting pad bonded near one end of the heat sink wafer and a second conducting pad bonded near the other end of the heat sink wafer, an oblong doped semiconductor crystal such as germanium, the oblong doped semiconductor crystal has a third conducting pad bonded on its top surface and a fourth conducting pad bonded on its bottom surface with the oblong doped semiconductor crystal bonded to the heat sink wafer by having the fourth conducting pad bonded to the first conducting pad, a wire bonded between the second and third conducting pads, and current and voltage applying wires bonded to the first and second conducting pads whereby the change in resistance of the oblong doped semiconductor crystal indicates the temperature of an object whose temperature is to be measured.
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Citations
12 Claims
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1. A device used in accurate temperature measurement of an object comprising:
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a heat sink wafer; a first conducting pad near one end of said heat sink wafer and a second conducting pad near the other end of said heat sink wafer; an oblong doped semiconductor crystal; said oblong doped semiconductor crystal having a third conducting pad covering or nearly covering its top surface and a fourth conducting pad covering or nearly covering its bottom surface; said oblong doped semiconductor crystal affixed to said heat sink wafer by having said fourth conducting pad affixed to said first conducting pad; conducting means between said second and third conducting pads; and current and voltage applying means communicating with said first and second conducting pads whereby the change in resistance of said oblong doped semiconductor crystal is used to facilitate the temperature measurement of said object. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification