Blanking aperture array, method for producing blanking aperture array, charged particle beam exposure apparatus and charged particle beam exposure method

• US 5,144,142 A
• Filed: 05/18/1990
• Issued: 09/01/1992
• Est. Priority Date: 05/19/1989
• Status: Expired due to Term

• Current Assignee: Fujitsu Semiconductor Limited (Fujitsu Limited)
• Original Assignee: Fujitsu Limited
• Inventors: Takahashi, Yasushi, Yasuda, Hiroshi, Fueki, Shunsuke, Sakamoto, Kiichi
• Primary Examiner(s): Anderson, Bruce C.
• Application Number:
  US07/525,062
• Time in Patent Office: 837 Days
• Field of Search: 250/396 R, 250/398, 250/492.2
• US Class Current: 250/396.00R
• CPC Class Codes: H01J 37/045 Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
• CPC Class Codes: H01J 37/3026 Patterning strategy

Abstract

A blanking aperture array for use in a charged particle beam exposure has a substrate, at least m rows by n columns of apertures arranged two-dimensionally in the substrate, where each of the apertures have a pair of blanking electrodes and m and n are integers greater than one, and n m-bit shift registers provided on the substrate for applying voltages dependent on pattern data to m pairs of the blanking electrodes of the apertures in the ith column, where i=1, 2, . . . , n. The pattern data is relates to a pattern which is to be exposed using the blanking aperture array.

Claims

1. A blanking aperture array for use in a charged particle beam exposure for shaping a charged particle beam, said blanking aperture array comprising:

a substrate;

at least m rows by n columns of apertures arranged two-dimensionally in said substrate, each of said apertures having a pair of blanking electrodes, where m and n are integers greater than one; and

n m-bit shift registers provided on said substrate, each of said n m-bit registers couples to corresponding pairs of said blanking electrodes of said apertures which are arranged in a corresponding ith column, for applying voltages dependent on pattern data to m pairs of the blanking electrodes of said apertures in the ith column, where i=1, 2, . . . , n, said pattern data being related to a pattern which is to be exposed using the blanking aperture array.

2. The blanking aperture array as claimed in claim 1 which further comprises a buffer provided on said substrate for supplying the pattern data to said n shift registers.

3. The blanking aperture array as claimed in claim 1 wherein said n shift registers are provided along each row of said apertures which are arranged in said m rows by n columns.

4. The blanking aperture array as claimed in claim 1 wherein said n shift registers respectively comprise a plurality of shift register parts coupled in series and arranged within a lattice width along a direction of each row of said apertures, each of said shift register parts comprising an inverter and a transistor which are coupled in series, an output of each of said shift register parts being applied to a corresponding one of said blanking electrodes, mutually adjacent ones of said transistors being turned ON/OFF in response to first and second clocks via signal lines which are provided within a lattice width along a direction of each column of said apertures.

5. The blanking aperture array as claimed in claim 1 wherein said n shift registers respectively comprise a plurality of circuit parts coupled via a first gate and arranged within a lattice width along a direction of each row of said apertures, each of said circuit parts comprising two inverters which are coupled in series via a second gate, an output of each of said circuit parts being applied to a corresponding one of said blanking electrodes, said first and second gates being turned ON/OFF in response to first and second clocks via signal lines which are provided within a lattice width along a direction of each column of said apertures.

6. The blanking aperture array as claimed in claim 1 wherein said n shift registers respectively comprise a plurality of shift register parts coupled in series and arranged within a lattice width along a direction of each row of said apertures, each of said shift register parts comprising an inverter and a gate which are coupled, an output of each of said shift register parts being applied to a corresponding one of said blanking electrodes, said gate being turned ON/OFF in response to first and second clocks via signal lines which are provided within a lattice width along a direction of each column of said apertures.

7. The blanking aperture array as claimed in claim 1 wherein said n shift registers also applies voltages dependent on exposure time correction data to said blanking electrodes of said apertures, so that arbitrary ones of said apertures are used for exposure time correction.

8. The blanking aperture array as claimed in claim 1 wherein said m rows by n columns of apertures and said n shift registers form an array unit, and a plurality of array units are independently provided on said substrate.

9. The blanking aperture array as claimed in claim 8 which further comprises at least one of an aperture for variable rectangular beam shaping and a stencil having a transmission aperture with a certain pattern provided on said substrate in addition to said array units.

10. A charged particle beam exposure apparatus comprising:

a blanking aperture array comprising,

a substrate; and

m rows and n columns of apertures arranged two-dimensionally in said substrate, each of said apertures having a pair of blanking electrodes;

voltage applying means for applying to said blanking electrodes of each of said apertures a voltage dependent on a pattern data which describes a pattern which is to be exposed so that a charged particle beam transmitted through said apertures is turned ON/OFF depending on the applied voltage; and

a stage which carries an object on which the pattern is exposed by the charged particle beam transmitted through said apertures;

said voltage applying means including n m-bit shift registers which are formed on said substrate of said blanking aperture array, each of said n m-bit shift registers couples to corresponding pairs of said blanking electrodes of said apertures which are arranged in a corresponding ith column, and n shift registers applying to m pairs of said blanking electrodes of each of said apertures in the ith column the voltage dependent on the pattern data which describes said pattern which is to be exposed on said object, where i=1, 2, . . . , n.

11. The charged particle beam exposure apparatus as claimed in claim 10 wherein said blanking aperture array further comprises a buffer provided on said substrate for supplying the pattern data to said n shift registers.

12. The charged particle beam exposure apparatus as claimed in claim 10 wherein said n shift registers of said blanking aperture array are provided along each row of said apertures which are arranged in said m rows by n columns.

13. The charged particle beam exposure apparatus as claimed in claim 10 wherein said n shift registers of said blanking aperture array respectively comprise a plurality of shift register parts coupled in series and arranged within a lattice width along a direction of each row of said apertures, each of said shift register parts comprising an inverter and a transistor which are coupled in series, an output of each of said shift register parts being applied to a corresponding one of said blanking electrodes, mutually adjacent ones of said transistors being turned ON/OFF in response to first and second clocks via signal lines which are provided within a lattice width along a direction of each column of said apertures.

14. The charged particle beam exposure apparatus as claimed in claim 10 wherein said n shift registers of said blanking aperture array respectively comprise a plurality of circuit parts coupled via a first gate and arranged within a lattice width along a direction of each row of said apertures, each of said circuit parts comprising two inverters which are coupled in series via a second gate, an output of each of said circuit parts being applied to a corresponding one of said blanking electrodes, said first and second gates being turned ON/OFF in response to first and second clocks via signal lines which are provided within a lattice width along a direction of each column of said apertures.

15. The charged particle beam exposure apparatus as claimed in claim 10 wherein said n shift registers of said blanking aperture array respectively comprise a plurality of shift register parts coupled in series and arranged within a lattice width along a direction of each row of said apertures, each of said shift register parts comprising an inverter and a gate which are coupled, an output of each of said shift register parts being applied to a corresponding one of said blanking electrodes, said gate being turned ON/OFF in response to first and second clocks via signal lines which are provided within a lattice width along a direction of each column of said apertures.

16. The charged particle beam exposure apparatus as claimed in claim 10 wherein said n shift registers of said blanking aperture array also applies voltages dependent on exposure time correction data to said blanking electrodes of said apertures, so that arbitrary ones of said apertures are used for exposure time correction.

17. The charged particle beam exposure apparatus as claimed in claim 10 wherein said m rows by n columns of apertures and said n shift registers form an array unit and a plurality of array units are independently provided on said substrate, and said charged particle beam exposure apparatus further comprises means for applying a voltage dependent on a next pattern data to one array unit during an exposure using another array unit so as to change an arrangement of ON apertures to that of a next pattern which is to be exposed on said object.

18. The charged particle beam exposure apparatus as claimed in claim 17 which further comprises at least one of an aperture for variable rectangular beam shaping and a stencil having a transmission aperture with a certain pattern provided on said substrate in addition to said array units, one of said aperture of said array unit, said aperture for variable rectangular beam shaping and said stencil being used for the exposure.

19. The charged particle beam exposure apparatus as claimed in claim 10 wherein said shift registers supply the voltage dependent on said pattern data to said blanking electrodes to form an arrangement of ON apertures into an arbitrary shape prior to the exposure, said charged particle beam having a cross section which is shaped to said arbitrary shape at a time of the exposure.

20. The charged particle beam exposure apparatus as claimed in claim 10 which further comprises deflecting and converging means for projecting onto said object the charged particle beam which is selected and patterned by said blanking aperture array.

21. The charged particle beam exposure apparatus as claimed in claim 20 which further comprises moving means for moving said stage and control means for controlling said deflecting and converging means and said moving means, said n shift registers simultaneously shifting the pattern data which is successively input n bits at a time along the column direction in response to a clock, said control means controlling said moving means and said deflecting and converging means so that the charged particle beam which is selected and patterned by said blanking aperture array is projected at the same position on said object while the pattern data is shifted in said shift registers.

22. The charged particle beam exposure apparatus as claimed in claim 21 wherein said n shift registers successively receive different pattern data n bits at a time along the column direction.

23. The charged particle beam exposure apparatus as claimed in claim 10 wherein said n shift registers simultaneously shift the pattern data which is successively input n bits at a time along the column direction in response to a clock, and the exposure by the charged particle beam is made after a shift operation with respect to the pattern data is finished by said shift registers.

24. A charged particle beam exposure apparatus as claimed in claim 10 wherein said blanking aperture array includes first and second masks, said first mask comprising a simple rectangular aperture, an aperture for variable rectangular beam shaping and a stencil, said second mask comprising a simple rectangular aperture, a blanking rectangular aperture and the array of said apertures and said shift registers, said first and second masks being overlapped so that the simple rectangular aperture of said first mask corresponds to the array part of said second mask and the simple rectangular aperture or blanking rectangular aperture of said second mask corresponds to the variable rectangular aperture and stencil part of said first mask.

25. A charged particle beam exposure apparatus comprising:

a stage on which an object is placed;

charged particle beam generating means including m rows by n columns of variable control charged particle beam generating elements for generating a charged particle beam corresponding to a pattern which is to be exposed on the object;

n m-bit shift registers provided along each column of said charged particle beam generating elements, each of said n m-bit shift registers couples to corresponding ones of said variable control charged particle beam generating elements which are arranged in a corresponding column, for applying a voltage dependent on a pattern data to each of said charged particle beam generating elements, said pattern data describing the pattern which is to be exposed on the object; and

deflecting the converging means for projecting the charged particle beam from said charged particle beam generating means on the object.

26. A charged particle beam exposure method for exposing an object in a charged particle beam exposure apparatus which comprises a stage on which the object is placed, charged particle beam generating means including m rows by n columns of variable control charged particle beam generating elements for generating a charged particle beam corresponding to a pattern which is to be exposed on the object, n m-bit shift registers provided along each column of said charged particle beam generating elements, each of said n m-bit shift registers couples to corresponding ones of said variable control charged particle beam generating elements which are arranged in a corresponding column, means for applying a voltage dependent on pattern data to each of said charged particle beam generating elements, the pattern data describing the pattern which is to be exposed on the object, and deflecting and converging means for projecting the charged particle beam from said charged particle beam generating means on the object, said charged particle beam exposure method comprising the steps of:

(a) successively inputting the pattern data to said n shift registers n bits at a time along the column direction;

(b) simultaneously shifting the pattern data in said n m-bit shift registers in response to a clock; and

(c) controlling a movement of said stage and said deflecting and converging means so that the charged particle beam which is selected and patterned by said charged beam generating means is projected at the same position on the object.

27. The charged particle beam exposure method as claimed in claim 26, further comprising the steps of:

(d) supplying correction data to said n m-bit shift registers in addition tot eh pattern data;

(e) correcting an exposure time responsive to the correction data by using arbitrary charged particle beam generating element of said charged particle beam generating means.