Horizontal microelectronic field emission devices

• US 5,144,191 A
• Filed: 06/12/1991
• Issued: 09/01/1992
• Est. Priority Date: 06/12/1991
• Status: Expired due to Term

• Current Assignee: eMagin Corporation (Samsung Electronics Co. Ltd.)
• Original Assignee: MCNC, Inc.
• Inventors: Jones, Gary W., Sune, Ching-Tzong
• Primary Examiner(s): DEMEO, PALMER
• Application Number:
  US07/714,275
• Time in Patent Office: 447 Days
• Field of Search: 313/308, 313/309, 313/336, 313/351
• US Class Current: 313/308
• CPC Class Codes: H01J 3/022 with microengineered cathode, e.g. Spindt-type

Abstract

A microelectronic field emitter includes a horizontal emitter electrode and a vertical extraction electrode on the horizontal face of a substrate. An end of the horizontal emitter electrode and the end of the vertical extraction electrode form an electron emission gap therebetween. The emitter electrode may be formed on an insulating layer which is formed on a substrate. The insulating layer also includes a sidewall, and the extraction electrode may be formed on the sidewall with one thereof extending adjacent the emitter electrode to form an electron emission gap therebetween. A vertical collector electrode may also be formed on the sidewall of a second insulating layer spaced from the first sidewall. The field emitter may be cylindrical, planar, or of various other shapes. multiple emitters, extractors and collectors may be stacked on one another. The emitters may be formed using conventional microelectronic fabrication techniques, in which an insulating layer is etched to form a sidewall and conformal metallization is used to form extractor and collector electrodes. A low capacitance, high speed, high power horizontal microelectronic emitter may thereby be formed.

Claims

1. A microelectronic field emitter comprising:

a horizontal substrate having a horizontal face;

a first insulating layer on said horizontal face, said first insulating layer having a first vertical sidewall;

a first horizontal emitter electrode on said first insulating layer with one end thereof extending adjacent said first vertical sidewall; and

a vertical extraction electrode on said first vertical sidewall with one end thereof extending adjacent said first horizontal emitter electrode, said one end of said first horizontal emitter electrode and said one end of said vertical extraction electrode forming an electron emission gap therebetween and

a horizontal cap, spaced from said horizontal face, for encapsulating said first horizontal emitter electrode and said vertical extraction electrode.

2. The microelectronic field emitter of claim 1 further comprising:

a second insulating layer on said horizontal face, said second insulating layer having a second vertical sidewall, said second vertical sidewall being spaced from said first vertical sidewall to form a cavity therebetween, and

a vertical collector electrode on said second vertical sidewall.

3. The microelectronic field emitter of claim 2 wherein said collector electrode comprises one of a light emissive material and an x-ray emissive material.

4. The microelectronic field emitter of claim 2 further comprising a cap, on said first and second insulating layers, bridging said cavity.

5. The microelectronic field emitter of claim 1 wherein said first vertical sidewall comprises a first planar vertical sidewall;

wherein said one end of said first emitter electrode comprises a planar one end extending adjacent said first vertical sidewall; and

wherein said vertical extraction electrode comprises a planar vertical extraction electrode, said planar one end of said first horizontal emitter electrode and said planar one end of said vertical extraction electrode forming an elongated electron emission gap therebetween.

6. The microelectronic field emitter of claim 5 further comprising:

a second insulating layer on said first horizontal face, said second insulating layer having a second planar vertical sidewall, spaced from and parallel to said first planar vertical sidewall; and

a planar vertical collector electrode on said second planar sidewall.

7. The microelectronic field emitter of claim 1 further comprising:

a second insulating layer on said first horizontal emitter electrode, said second insulating layer having a second vertical sidewall;

a second horizontal emitter electrode on said second insulating layer, with one end thereof extending adjacent said second vertical sidewall; and

a second vertical extraction electrode on said vertical second sidewall, with one end thereof extending adjacent said second horizontal emitter electrode, said one end of said second horizontal emitter electrode and said one end of said second vertical extraction electrode forming a second electron emission gap therebetween.

8. The microelectronic field emitter of claim 7 further comprising:

a third insulating layer on said horizontal face, said third insulating layer having a third vertical sidewall, said third vertical sidewall being spaced from said first and said second vertical sidewalls; and

,

a vertical collector electrode on said third vertical sidewall.

9. The microelectronic field emitter of claim 1 further comprising a collector electrode on said horizontal face, adjacent said first vertical sidewall.

10. The microelectronic field emitter of claim 9 wherein said collector electrode comprises one of a light emissive material and an x-ray emissive material.

11. The microelectronic field emitter of claim 1 further comprising at least one intervening layer between said substrate and said first insulating layer.

12. A microelectronic field emitter comprising;

a substrate having a first face;

a first insulating layer on said first face, said first insulating layer having a first sidewall;

a first emitter electrode on said first insulating layer, with one end thereof extending adjacent said first sidewall; and

an extraction electrode on said first sidewall, with one end thereof extending adjacent said first emitter electrode, said one end of said first emitter electrode and said one end of said extraction electrode forming an electron emission gap therebetween,

wherein said first insulating layer comprises a first cylindrical insulating layer having a first cylindrical sidewall;

wherein said first emitter electrode comprises a first circular emitter electrode on said first insulating layer; and

wherein said extraction electrode comprises a cylindrical extraction electrode on said first sidewall, with said one end of said circular emitter electrode and said one end of said cylindrical extraction electrode forming a circular electron emission gap therebetween.

13. The microelectronic field emitter of claim 12 further comprising:

a second insulating layer on said first face surrounding said first insulating layer and having a second cylindrical sidewall concentric with said first cylindrical sidewall; and

a cylindrical collector electrode on said second sidewall.

14. A microelectronic field emitter comprising:

a substrate having a first face;

a first insulating layer on said first face, said first insulating layer having a first sidewall;

a first emitter electrode on said first insulating layer, with one end thereof extending adjacent said first sidewall;

an extraction electrode on said first sidewall, with one end thereof extending adjacent said first emitter electrode, said one end of said first emitter electrode and said one end of said extraction electrode forming an electron emission gap therebetween;

a second insulating layer on said first emitter electrode, said second insulating layer having a second sidewall; and

a second extraction electrode on said second sidewall, with one end thereof extending adjacent said first emitter electrode, said one end of said first emitter electrode and said one end of said second extraction electrode forming a second electron emission gap therebetween.

15. A microelectronic field emitter comprising:

a substrate having a first face;

a first insulating layer on said first face, said first insulating layer having a first sidewall;

a first emitter electrode on said first insulating layer, with one end thereof extending adjacent said first sidewall;

an extraction electrode on said first sidewall, with one end thereof extending adjacent said first emitter electrode, said one end of said first emitter electrode and said one end of said extraction electrode forming an electron emission gap therebetween;

a second insulating layer on said first face, said second insulating layer having a second sidewall;

a second emitter electrode on said second insulating layer, with one end thereof extending adjacent said second sidewall, said one end of said first emitter electrode facing said one end of said second emitter electrode; and

a second extraction electrode on said second sidewall, with one end thereof extending adjacent said second emitter electrode, said one end of said second emitter electrode and said one end of said second extraction electrode forming a second electron emission gap therebetween.

16. The microelectronic field emitter of claim 15 further comprising a conductive plate, parallel to and insulated from said first emitter electrode, said first emitter electrode and said conductive plate forming a capacitor for storing charge therein.

17. A microelectronic field emitter comprising:

a substrate having a first face;

a first insulating layer on said first face, said first insulating layer having a first sidewall;

a first emitter electrode on said first insulating layer, with one end thereof extending adjacent said first sidewall;

an extraction electrode on said first sidewall, with one end thereof extending adjacent said first emitter electrode, said one end of said first emitter electrode and said one end of said extraction electrode forming an electron emission gap therebetween;

a third insulating layer on said second emitter electrode, said third insulating layer having a third sidewall;

a third emitter electrode on said third insulating layer, with one end thereof extending adjacent said third sidewall; and

a third extraction electrode on said third sidewall, with one end thereof extending adjacent said third emitter electrode, said one end of said third emitter electrode and said one end of said third extraction electrode forming a third electron emission gap therebetween.

18. A microelectronic field emitter comprising:

a substrate having a first face;

a first insulating layer on said first face, said first insulating layer having a first sidewall;

a first emitter electrode on said first insulating layer, with one end thereof extending adjacent said first sidewall; and

an extraction electrode on said first sidewall, with one end thereof extending adjacent said first emitter electrode, said one end of said first emitter electrode and said one end of said extraction electrode forming an electron emission gap therebetween, wherein said one end of said emitter electrode overhangs said first sidewall.

19. A microelectronic field emitter comprising:

a substrate having a first face;

a first insulating layer on said first face, said first insulating layer having a first sidewall;

a first emitter electrode on said first insulating layer, with one end thereof extending adjacent said first sidewall; and

an extraction electrode on said first sidewall, with one end thereof extending adjacent said first emitter electrode, said one end of said first emitter electrode and said one end of said extraction electrode forming an electron emission gap therebetween; and

a conductive plate, parallel to and insulated from said first emitter electrode, said first emitter electrode and said conductive plate forming a capacitor for storing charge therein.

20. A microelectronic field emitter comprising:

a substrate having a horizontal face;

a first planar horizontal emitter electrode on said horizontal face, said first horizontal emitter electrode having a linear first end; and

a first planar vertical extraction electrode on said horizontal face, said first vertical extraction electrode having a linear first end;

said linear first end of said first horizontal emitter electrode and said linear first end of said first vertical extraction electrode extending adjacent one another to form an elongated linear electron emission gap therebetween.

21. The microelectronic field emitter of claim 20 further comprising a planar vertical collector electrode on said horizontal face, spaced from said first planar vertical extraction electrode, to form a cavity therebetween.

22. The microelectronic field emitter of claim 20 further comprising a second planar horizontal emitter electrode on said horizontal face.

23. The microelectronic field emitter of claim 22 wherein said first horizontal planar emitter electrode extends between said first horizontal face and said second horizontal planar emitter electrode.

24. The microelectronic field emitter of claim 22 further comprising a second planar vertical extraction electrode on said horizontal face, said second planar vertical extraction electrode having a linear first end, said linear first end of said second horizontal emitter electrode and said linear first end of said second vertical extraction electrode extending adjacent one another to form an elongated linear electron emission gap therebetween.

25. The microelectronic field emitter of claim 20 further comprising at least one intervening layer between said first planar horizontal emitter electrode and said horizontal face.

26. The microelectronic field emitter of claim 20 further comprising at least one intervening layer between said first vertical planar extraction electrode and said horizontal face.

27. A microelectronic field emitter comprising:

a substrate having a horizontal face;

a first horizontal emitter electrode on said horizontal face, said first horizontal emitter electrode having a first end; and

a first vertical extraction electrode on said horizontal face, said first vertical extraction electrode having a first end;

said first end of said first horizontal emitter electrode and said first end of said first vertical extraction electrode extending adjacent one another to form an electron emission gap therebetween;

wherein said first horizontal emitter electrode comprises a first horizontal circular emitter electrode and wherein said first vertical extraction electrode comprises a first vertical cylindrical extraction electrode, with said first end of said circular emitter electrode and said first end of said cylindrical extraction electrode forming a circular electron emission gap therebetween.

28. A microelectronic field emitter comprising:

a substrate having a horizontal face;

a first horizontal emitter electrode on said horizontal face, said first horizontal emitter electrode having a first end;

a first vertical extraction electrode on said horizontal face, said first vertical extraction electrode having a first end;

said first end of said first horizontal emitter electrode and said first end of said first vertical extraction electrode extending adjacent one another to form an electron emission gap therebetween; and

a horizontal conductive plate, insulated from said first horizontal emitter electrode, said first horizontal emitter electrode and said horizontal conductive plate forming a capacitor for storing charge therein.