Acoustic charge transport selectable delay line and delay line oscillator formed therewith

• US 5,144,262 A
• Filed: 10/10/1989
• Issued: 09/01/1992
• Est. Priority Date: 10/10/1989
• Status: Expired due to Term

• Current Assignee: National Semiconductor Corporation (Texas Instruments, Inc.)
• Original Assignee: Electronic Decisions, Inc.
• Inventors: Hunsinger, Billy J.
• Primary Examiner(s): LaRoche, Eugene R.
• Assistant Examiner(s): LEE, BENNY T
• Application Number:
  US07/420,109
• Time in Patent Office: 1,057 Days
• Field of Search: 333/150-154, 333/165, 333/193-196, 310/313 R, 310/313 B, 310/313 C, 310/313 D, 357/24, 364/821, 331/107 A
• US Class Current: 331/107.00A
• CPC Class Codes: H03B 5/326 the resonator being an acoustic wave device, e.g. SAW or BAW device
• CPC Class Codes: H03H 9/02976 with semiconductor devices

Abstract

A delay device comprises a semi-conductor chip having acoustic charge transport channel disposed therein; a contact operably connected to and disposed at one end of the channel for injecting an electronic signal into the channel; a transducer for generating a single frequency, large amplitude acoustic surface wave through the channel for thereby transporting the electronic signal through the channel; a plurality of electrodes operably associated with the channel and disposed along the propagation path of the surface acoustic wave for non-destructively sensing the electronic signal; switches monolithically disposed on the chip and operably connected to the electrodes for preselecting any one of the electrodes, thereby extracting a delayed replica of the signal from the channel; and an output circuit for processing the extracted signal for generating an output.

Claims

1. A delay device, comprising:

a) a semi-conductor chip;

b) an acoustic charge transport channel disposed on said chip and having first and second opposite ends and a longitudinal axis;

c) means disposed at said first end of said channel for injecting an electronic signal into said channel;

d) means coupled to said channel for generating a single frequency, large amplitude surface acoustic wave through said channel along a propagation direction from said first end to said second end for thereby transporting the electronic signal through said channel;

e) a plurality of means operable associated with said channel end disposed along the propagation direction of the surface acoustic wave for non-destructively sensing the electronic signal as the electronic signal is transported by the surface acoustic wave;

f) means monolithically disposed on said chip and operably connected to said sensing means for preselecting any one of said sensing means, thereby extracting a delayed replica of the signal from said channel;

g) means operably connected to said preselecting means for processing the extracted delayed replica of the signal for generating an output; and

h) said generating means comprising a delay line oscillator operably coupled to said channel.

2. A device as in claim 1, wherein:

a) said processing means includes an output amplifier operable connected to said preselecting means.

3. A device as in claim 2, wherein:

a) said processing means includes an output bus connected to said preselecting means, said output bus being at a predetermined voltage level; and

b) a bias circuit operably connected to said output bus for maintaining said predetermined voltage level.

4. A device as in claim 1, wherein said delay line oscillator comprises:

a) a drive transducer operably associated with said first end of said channel for generating the surface acoustic wave;

b) at least one pick-up transducer operably associated with said channel for picking up the generated wave; and

c) an amplifier having output and input connected to said drive transducer and said at least one pick-up transducer, respectively.

5. A device as in claim 4, wherein:

a) said at least one pick-up transducer is disposed at said second end of said channel.

6. A device as in claim 4, wherein:

a) said at least one pick-up transducer is disposed at said first end of said channel.

7. A device as in claim 4, wherein:

a) said at least one pick-up transducer comprises first and second pick-up transducers;

b) said first pick-up transducer is disposed at said first end of said channel;

c) said second pick-up transducer is disposed at said second end of said channel; and

d) said first and second pick-up transducers are connected to said amplifier input.

8. A device as in claim 4, wherein said generating means further comprises:

a) a reflector coupled to said channel and disposed ahead of said drive transducer relative to the propagation direction of the surface acoustic wave.

9. A device as in claim 8, wherein said generating means further comprises:

a) an absorber disposed at said second end of said channel.

10. A device as in claim 4, wherein said delay line oscillator further comprises:

a) phase shifter connected between said amplifier input and said at least one pick-up transducer.

11. A device as in claim 1, wherein said injecting means comprises:

a) an ohmic contact operable associated with said channel for injecting the electronic signal to said channel; and

b) a Schottky barrier gate disposed adjacent and electrically coupled to said ohmic contact for controlling the injection of the electronic signal by said ohmic contact.

12. A device as in claim 11, wherein:

a) said ohmic contact is disposed parallel to said longitudinal axis of said channel;

b) said Schottky barrier gate is "U"-shaped and said ohmic contact is disposed within said "U"; and

c) an insulating boundary disposed in front of said ohmic contact and said Schottky barrier gate relative to the propagation direction of the surface acoustic wave in said channel.

13. A device as in claim 12, wherein:

a) said "U" has a base portion; and

b) said insulating barrier has a width that subtends said base portion.

14. A device as in claim 13, wherein:

a) said insulating barrier is in the shape of a pentagon with an apex pointing in the direction of propagation of the surface acoustic wave.

15. A device as in claim 11, wherein:

a) said ohmic contact and said Schottky barrier gate are each disposed transverse to said longitudinal axis of said channel.

16. A device as in claim 1, wherein:

a) said channel has a width;

b) said injecting means comprises first, second and third groups of ohmic contacts and Schottky barrier gates; and

c) each of said ohmic contacts and said Schottky barrier gates are arrayed along the width of said channel.

17. A device as in claim 16, wherein:

a) each of said ohmic contacts and said Schottky barrier gates are disposed parallel to said channel longitudinal axis in a staggered configuration.

18. A device as in claim 16, wherein:

a) each of said ohmic contacts and said Schottky barrier gates are disposed transverse to said channel longitudinal axis in a staggered configuration.

19. A device as in claim 1, wherein said preselecting means comprises:

a) a logic circuitry operably connected to each of said sensing means for addressing a selected one of said sensing means; and

b) tap switching circuitry operably connected to each of said sensing means and responsive to said logic circuitry for connecting the selected sensing means to said processing means.

20. A device as in claim 19, wherein:

a) said logic circuitry includes means for generating a negative current on a selected one of said sensing means and a positive current on the others of said sensing means whereby the sensing means with the negative current is the selected sensing means; and

b) said tap switching circuitry includes means responsive to the negative current to thereby connect the selected sensing means to said processing means.

21. A delay device, comprising:

a) a semi-conductor chip;

b) an acoustic charge transport channel disposed on said chip and having first and second opposite ends and a longitudinal axis;

c) an ohmic contact operably associated with said channel for injecting an electronic signal to said channel;

d) a drive transducer operably associated with said first end of said channel for converting an applied signal into a single frequency, large amplitude surface acoustic wave for propagating through said channel along a propagation direction from said first end to said second end for thereby transporting the electronic signal through said channel;

e) a Schottky barrier gate disposed adjacent and electrically coupled to said ohmic contact for controlling the injection of the electronic signal by said ohmic contact;

f) said Schottky barrier gate is "U"-shaped and said ohmic contact is disposed within said "U";

g) an insulating boundary disposed in front of said ohmic contact relative to the propagation direction of said surface acoustic wave;

h) at least one pick-up transducer operably associated with said channel for picking up the generated surface acoustic wave;

i) an amplifier having an output and an input connected to said drive transducer and said at least one pick-up transducer, respectively;

j) a plurality of electrodes operably associated with said channel and disposed along the propagation direction of the surface acoustic wave for non-destructively sensing the electronic signal as the electronic signal is transported by the surface acoustic wave;

k) means monolithically disposed on said chip and operably connected to said electrodes for preselecting any one of said electrodes, thereby extracting a delayed replica of the signal from said channel; and

l) means operably connected to said preselecting means for processing the extracted delayed replica of the signal for generating an output.

22. A device as in claim 21, wherein said preselecting means comprises:

a) logic circuitry operably connected to each of said electrodes for addressing a selected one of said electrodes; and

b) tap switching circuitry operably connected to each of said electrodes and responsive to said logic circuitry for connecting the selected electrode to said processing means.

23. A device as in claim 22, wherein:

a) said logic circuitry includes means for generating a negative current on a selected one of said electrodes and a positive current on the other electrodes whereby the electrode with the negative current is the selected electrode; and

b) said tap switching circuitry includes means responsive to the negative current thereby to connect the selected electrode to said processing means.

24. A device as in claim 21, wherein:

a) said pick-up transducer is disposed at said first end of said channel.

25. A device as in claim 21, wherein:

a) said at least one pick-up transducer comprises first and second pick-up transducers;

b) said first pick-up transducer is disposed at said first end of said channel;

c) said second pick-up transducer is disposed at said second end of said channel; and

d) said first and second pick-up transducers are connected to said amplifier input.

26. A device as in claim 21, wherein:

a) said ohmic contact is disposed parallel to said longitudinal axis of said channel.

27. A device as in claim 21, wherein:

a) said "U" has a base portion; and

b) said insulating barrier has a width that subtends said base.

28. A device as in claim 27, wherein:

a) said insulating barrier is in the shape of a pentagon with an apex pointing in the direction of propagation of the surface acoustic wave.

29. A device as in claim 21, wherein:

a) said pick-up transducer is disposed at said second end of said channel.