Terminal electrode structure of a liquid crystal panel display
First Claim
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1. A liquid-crystal panel comprising:
- a plurality of rows of thin-film transistors each of said thin-film transistors having a gate electrode associated therewith;
a plurality of gate bus lines corresponding to said plurality of rows, the gate electrodes of said thin-film transistors in each of said plurality of rows electrically connected to a gate bus line;
a plurality of terminal electrodes connected to the terminating ends of each of said plurality of gate bus lines;
a transparent conductive coating disposed over in direct contact with said plurality of terminal electrodes;
said thin-film transistors having a gate insulator film and an amorphous semiconductor layer formed thereon;
wherein said gate insulator film comprises an anodic oxidation film disposed on said gate electrodes and a protective insulator film disposed on said anodic oxidation film.
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Abstract
A liquid-crystal panel includes a plurality of thin-film transistors. Terminal electrodes associated with gate bus lines which connect the gate electrodes of the thin-film transistors include a layer that is made of an electrode material used for the gate electrode, and a transparent conductive coating formed on the layer. This structure produces a stable connection at the terminal electrode of the gate electrode providing the liquid-crystal panel with excellent display qualities and a high reliability.
32 Citations
3 Claims
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1. A liquid-crystal panel comprising:
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a plurality of rows of thin-film transistors each of said thin-film transistors having a gate electrode associated therewith; a plurality of gate bus lines corresponding to said plurality of rows, the gate electrodes of said thin-film transistors in each of said plurality of rows electrically connected to a gate bus line; a plurality of terminal electrodes connected to the terminating ends of each of said plurality of gate bus lines; a transparent conductive coating disposed over in direct contact with said plurality of terminal electrodes; said thin-film transistors having a gate insulator film and an amorphous semiconductor layer formed thereon; wherein said gate insulator film comprises an anodic oxidation film disposed on said gate electrodes and a protective insulator film disposed on said anodic oxidation film. - View Dependent Claims (2, 3)
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Current AssigneeSharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
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Original AssigneeSharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
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InventorsNakabu, Shigeo, Yamamura, Keiji, Nukii, Takashi
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Primary Examiner(s)Hille, Rolf
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Assistant Examiner(s)TRAN, MINH LOAN
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Application NumberUS07/257,865Time in Patent Office1,425 DaysField of Search357/17, 357/23.7, 357/4, 357/2, 350/336, 350/334, 350/333US Class Current349/152CPC Class CodesG02F 1/1345 Conductors connecting elect...G02F 1/13458 Terminal padsG02F 1/1368 in which the switching elem...
