Terminal electrode structure of a liquid crystal panel display
First Claim
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1. A liquid-crystal panel comprising:
- a plurality of rows of thin-film transistors each of said thin-film transistors having a gate electrode associated therewith;
a plurality of gate bus lines corresponding to said plurality of rows, the gate electrodes of said thin-film transistors in each of said plurality of rows electrically connected to a gate bus line;
a plurality of terminal electrodes connected to the terminating ends of each of said plurality of gate bus lines;
a transparent conductive coating disposed over in direct contact with said plurality of terminal electrodes;
said thin-film transistors having a gate insulator film and an amorphous semiconductor layer formed thereon;
wherein said gate insulator film comprises an anodic oxidation film disposed on said gate electrodes and a protective insulator film disposed on said anodic oxidation film.
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Abstract
A liquid-crystal panel includes a plurality of thin-film transistors. Terminal electrodes associated with gate bus lines which connect the gate electrodes of the thin-film transistors include a layer that is made of an electrode material used for the gate electrode, and a transparent conductive coating formed on the layer. This structure produces a stable connection at the terminal electrode of the gate electrode providing the liquid-crystal panel with excellent display qualities and a high reliability.
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Citations
3 Claims
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1. A liquid-crystal panel comprising:
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a plurality of rows of thin-film transistors each of said thin-film transistors having a gate electrode associated therewith; a plurality of gate bus lines corresponding to said plurality of rows, the gate electrodes of said thin-film transistors in each of said plurality of rows electrically connected to a gate bus line; a plurality of terminal electrodes connected to the terminating ends of each of said plurality of gate bus lines; a transparent conductive coating disposed over in direct contact with said plurality of terminal electrodes; said thin-film transistors having a gate insulator film and an amorphous semiconductor layer formed thereon; wherein said gate insulator film comprises an anodic oxidation film disposed on said gate electrodes and a protective insulator film disposed on said anodic oxidation film. - View Dependent Claims (2, 3)
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Specification