Method and apparatus for accurately measuring thickness of a semiconductor die bond material

• US 5,146,416 A
• Filed: 03/04/1991
• Issued: 09/08/1992
• Est. Priority Date: 03/04/1991
• Status: Expired due to Fees

• Current Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Kuo, Shun-Meen
• Primary Examiner(s): Lall, Parshotam S.
• Assistant Examiner(s): ZANELLI, MICHAEL J
• Application Number:
  US07/663,508
• Time in Patent Office: 554 Days
• Field of Search: 364/563, 364/560, 364/561, 364/551.02, 364/552, 364/474.37, 364/476
• US Class Current: 700/303
• CPC Class Codes: G01B 5/06 for measuring thickness

Abstract

A method for measuring die bond material (27) used to bond a semiconductor die (26) to a lead frame (28). The semiconductor die (26) height is measured on the lead frame (28). Die bond material (27) is placed onto the lead frame (28) and the semiconductor die (26) is pressed into the die bond material (27). The height of the semiconductor die (26) on the die bond material (27) is measured again. Thickness of the die bond material (27) is obtained by subtraction of the two heights.

Claims

1. A method for accurately measuring and controlling a die bond material thickness between a semiconductor die and a flag portion on a semiconductor lead frame comprising:

providing a quantifiable force that moves a die attach vacuum head;

touching the flag portion on the semiconductor lead frame by the die attach vacuum head, thereby establishing a first position f the die attach vacuum head

picking up and holding the semiconductor die with the die attach vacuum head;

touching the semiconductor die onto the flag portion of the semiconductor lead frame, thereby establishing a second position of the die attach vacuum head;

lifting the semiconductor die away from the flag portion of the semiconductor lead frame with the die attach vacuum head;

dispensing a predetermined amount of the die bond material onto the flag portion of the semiconductor lead frame;

pressing the semiconductor die into the die bond material, thereby establishing a third position of the die attach vacuum head;

measuring a thickness of the die bond material between the semiconductor die and the flag portion of the semiconductor lead frame by subtracting the first position from the second position and obtaining a thickness o the semiconductor die, the thickness of the semiconductor die then being subtracted from the third position, thereby determining the thickness of the die bond material; and

using the determination of the thickness of the die bond material to control the thickness of the die bond material.

2. The method of claim 1 further comprising comparing the thickness of the die bond material to an acceptable range of thicknesses for the die bond material and if the thickness of the die bond material is greater than an acceptable, repressing the semiconductor die into the die bond material until the acceptable thickness is achieved.

3. The method of claim 1 further comprising using a quantifiable force for course measuring and a linear gauge for fine measuring the height of the semiconductor die.

4. The method of claim 3 further comprising using a computer for recording the first position, the second position, and the third position, as well as performing all subtractions.

5. A method for accurately measuring and controlling a die bond material thickness between a semiconductor die of known thickness and a flag portion on a semiconductor lead frame comprising:

touching the flag on the semiconductor lead frame by a die attach vacuum head, thereby establishing a first position;

picking up and holding the semiconductor die with a known thickness by the die attach vacuum head;

dispensing a suitable amount of the die bond material onto the flag of the lead frame;

positioning the semiconductor die into the die bond material, thereby establishing a second position;

calculating thickness of the die bond material that is between the semiconductor die and the flag portion of the semiconductor lead frame by subtracting the first position from the second position and obtaining a first result, the known thickness of the semiconductor die is subtracted from the first result which is the thickness of the die bond material between the semiconductor die and the flag portion of the semiconductor lead frame; and

using the calculated thickness of the die bond material to determine whether a proper thickness of the die bond material has been achieved to control the thickness of the die bond material.

6. The method of claim 5 further comprising a routine of measuring the thickness of the die bond material, comparing the thickness of the die bond material to an acceptable range of thicknesses for die bond material and repeating the pressing the semiconductor die into the die bond material and measurement until acceptable thickness is achieved.

7. An apparatus for measuring die bond material thickness which comprises:

a quantifiable force for moving a die attach vacuum head to press a semiconductor die into the die bond material, as well as giving a course positional measurement;

a fine positional measurement device for performing a fine positional measurement to determine relative movement caused by the quantifiable force; and

means for comparing the course positional measurement and the fine positional measurement to a predetermined value to determine if thickness of die bond material is correct.

8. The apparatus of claim 7 wherein a stepper motor is used for the quantifiable force.

9. The apparatus of claim 7 wherein a linear gauge is used for measuring the fine positional measurement.

10. The apparatus of claim 7 wherein a computer is used for comparing the fine positional measurement and the course positional measurement to a predetermined value.

11. A method for measuring height of die bonding material used to bond a semiconductor die to a lead frame comprising:

measuring height of the semiconductor die on the lead frame;

placing die bonding material on the lead frame;

pressing the semiconductor die down on the die bonding material; and

measuring height of the semiconductor die on the die bonding material.

12. The method of claim 11 further including calculating a thickness of die bond material by subtracting the two measured heights.