Thin film gas sensor
First Claim
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1. A gas sensor which senses gas using a metal oxide semiconductor whose resistance changes depending on gas adhesion on a surface of the metal oxide semiconductor, said gas sensor comprising:
- a base structure; and
a gas sensitive layer formed on said base structure and made of a metal oxide semiconductor,said gas sensitive layer having a multi-layer structure which includes at least two layer portions having mutually different grain structures.
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Abstract
A gas sensor senses gas using a metal oxide semiconductor whose resistance changes depending on gas adhesion on a surface of the metal oxide semiconductor. The gas sensor includes a base structure, and a gas sensitive layer formed on the base structure and made of a metal oxide semiconductor. The gas sensitive layer has a multi-layer structure which includes at least two layer portions having mutually different grain structures.
13 Citations
25 Claims
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1. A gas sensor which senses gas using a metal oxide semiconductor whose resistance changes depending on gas adhesion on a surface of the metal oxide semiconductor, said gas sensor comprising:
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a base structure; and a gas sensitive layer formed on said base structure and made of a metal oxide semiconductor, said gas sensitive layer having a multi-layer structure which includes at least two layer portions having mutually different grain structures. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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Specification