Fuse with thin film fusible element supported on a substrate

• US 5,148,141 A
• Filed: 01/03/1991
• Issued: 09/15/1992
• Est. Priority Date: 01/03/1991
• Status: Expired due to Fees

• Current Assignee: Ferraz Shawmut Incorporated (Mersen SA)
• Original Assignee: Gould, Inc. (Transdigm Group Incorporated)
• Inventors: Suuronen, David E.
• Primary Examiner(s): Broome, Harold
• Application Number:
  US07/637,139
• Time in Patent Office: 621 Days
• Field of Search: 337/297, 357/51, 361/104, 361/402
• US Class Current: 337/297
• CPC Class Codes: H01H 2085/385 Impedances connected with the end contacts of the fusible element
• CPC Class Codes: H01H 85/046 Fuses formed as printed circuits

Abstract

A fusible element component for use in an electrical fuse, the component including a substrate made of insulative material and having a substrate surface, a fusible element made of a thin film of conductive material that is supported on the substrate, overlies a fusible element support area of the substrate surface, and provides a conductive path during normal current conditions, and a resistance element of resistance element material that is supported on the substrate, overlies a resistance element support area of the substrate surface that is a different area of the substrate surface than the fusible element support area, and is electrically in parallel to the fusible element to provide a shunt path during clearing of the fusible element during overcurrent conditions.

Claims

1. A fusible element component for use in an electrical fuse, said component comprising,

a substrate made of insulative material and having a substrate surface,

a fusible element made of a thin film of conductive material that is supported on said substrate, overlies a fusible element support area of said substrate surface, and provides a conductive path during normal current conditions, and

a resistance element of resistance element material that is supported on said substrate, overlies a resistance element support area of said substrate surface that is a different area of said substrate surface than said fusible element support area, and is electrically in parallel to said fusible element to provide a shunt path during clearing of said fusible element during overcurrent conditions.

2. The component of claim 1 wherein said resistance element is supported directly on said substrate surface.

3. The component of claim 2 wherein said resistance element is a portion of a layer of resistance element material that is deposited on said substrate and overlies both said element support area and said resistance support area, and wherein said fusible element is deposited on said resistance element material.

4. The component of claim 3 wherein said substrate is elongated and has two ends, and said resistance element and said fusible element extend from one end to the other.

5. The component of claim 4 wherein there are portions of said resistance element on two sides of said fusible element.

6. The component of claim 5 wherein said fusible element has notch portions of reduced area cross-section of conductive material along its length.

7. The component of claim 1 wherein said substrate is made of alumina.

8. The component of claim 7 wherein said alumina is less than 97% pure alumina.

9. The component of claim 1 wherein said resistance element material is a metal that has been deposited sufficiently thin to provide resistance to current flow and reduction of the peak quenching voltage during clearing of the fusible element during an overcurrent condition.

10. The component of claim 9 wherein said metal comprises chromium.

11. The component of claim 10 wherein said chromium is deposited in a layer about 400 Angstroms thick.

12. The component of claim 1 wherein said conductive material comprises copper.

13. The component of claim 1 wherein said conductive material comprises silver.

14. The component of claim 3 wherein said resistance element material is a metal that has been deposited sufficiently thin to provide resistance to current flow and reduction of the peak quenching voltage during clearing of the fusible element during an overcurrent condition.

15. The component of claim 14 wherein said metal comprises chromium.

16. The component of claim 15 wherein said chromium is deposited in a layer about 400 Angstroms thick.

17. The component of claim 16 wherein said conductive material comprises copper.

18. The component of claim 17 wherein said copper is deposited in a layer less than 1,000 microinches thick.

19. The component of claim 1 wherein said conductive material is deposited by DC planar magnetron sputtering.

20. The component of claim 19 wherein said resistance material is deposited by DC planar magnetron sputtering.

21. A fuse comprising

a fuse casing,

terminals attached to said fuse casing,

a substrate made of insulative material and having a substrate surface, said substrate being located in said fuse casing,

a fusible element made of a thin film of conductive material that is supported on said substrate, overlies a fusible element support of said substrate surface and is connected to provide a conductive path between said terminals during normal current conditions, and

a resistance element of resistance element material that is supported on said substrate, overlies a resistance element support area of said substrate surface that is a different area of said substrate surface than said fusible element support area, and is electrically in parallel to said fusible element between said terminals to provide a shunt path during clearing of said fusible element during overcurrent conditions.

22. The fuse of claim 21 further comprising arc quenching fill material within said fuse casing.

23. The fuse of claim 21 wherein said resistance element is supported directly on said substrate surface.

24. The fuse of claim 23 wherein said resistance element is a portion of a layer of resistance element material that is deposited on said substrate and overlies both said element support area and said resistance support area, and wherein said fusible element is deposited on said resistance element material.

25. The fuse of claim 24 wherein said resistance element material is a metal that has been deposited sufficiently thin to provide resistance to current flow and reduction of the peak quenching voltage during clearing of the fusible element during an overcurrent condition.

26. The fuse of claim 25 wherein said metal comprises chromium.

27. The fuse of claim 26 wherein said chromium is deposited in layer of about 400 Angstroms thick.

28. The fuse of claim 27 wherein said conductive material comprises copper.