Semiconductor device having thin film wiring layer of aluminum containing carbon

• US 5,148,259 A
• Filed: 07/31/1991
• Issued: 09/15/1992
• Est. Priority Date: 08/19/1986
• Status: Expired due to Fees

• Current Assignee: Fujitsu Limited
• Original Assignee: Fujitsu Limited
• Inventors: Kato, Takashi, Ito, Takashi, Maeda, Mamoru
• Primary Examiner(s): Hille, Rolf
• Assistant Examiner(s): TRAN, MINH LOAN
• Application Number:
  US07/740,872
• Time in Patent Office: 412 Days
• Field of Search: 357/71, 357/67, 357/60, 420/548, 420/550, 428/651, 428/548, 437/197, 437/194, 437/195, 437/957, 148/DIG. 140, 204/192.15, 204/192.17
• US Class Current: 257/771
• CPC Class Codes: H01L 21/32051 Deposition of metallic or metal-silicide layers
• CPC Class Codes: H01L 23/53219 Aluminium alloys
• CPC Class Codes: H01L 29/456 on silicon
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: Y10S 438/937 Hillock prevention

Abstract

A semiconductor device comprises one or a plurality of thin film wiring layers made of aluminum containing carbon, so as to obtain hillock-free wiring layers. A method of forming the thin film wiring layer employs a plasma-enhanced chemical vapor deposition or a magnetron-plasma chemical vapor deposition to form the thin film wiring layer.

Claims

1. A semiconductor device comprising:

a first layer; and

a second layer formed on said first layer,

said second layer being a thin film wiring layer made of aluminum containing at least carbon, wherein

the aluminum containing carbon has a grain size which is less than or equal to 100 nm in said second layer.

2. A semiconductor device as claimed in claim 1 in which said first layer is made of silicon and said second layer further contains silicon.

3. A semiconductor device as claimed in claim 2 in which said second layer contains 2 or less atomic percent of the silicon.

4. A semiconductor device as claimed in claim 1, further comprising:

a third layer made of a metal and formed on said second layer; and

a fourth layer formed on said third layer, said fourth layer being a thin film made of aluminum containing carbon.

5. A semiconductor device as claimed in claim 4, wherein the metal of said third layer is selected from a group including tungsten and titanium.

6. A semiconductor device as claimed in claim 4, wherein said third layer is made of aluminum containing carbon, said third layer containing an atomic percent of carbon which is small compared to atomic percents of carbon contained in said second and fourth layers.

7. A semiconductor device as claimed in claim 4 in which said first layer is made of silicon and said second layer further contains silicon.

8. A semiconductor device as claimed in claim 4 in which said second layer contains an atomic percent of carbon greater than an atomic percent of carbon contained in said third layer.

9. A semiconductor device as claimed in claim 5 in which a plurality of pairs of said third layer type and said fourth layer type are provided on said fourth layer in alternate succession so that each third layer type is sandwiched between two fourth layer types.

10. A semiconductor device as claimed in claim 1, in which grains of said second layer are generally oriented on a (200) plane.

11. A semiconductor device as claimed in claim 1, in which said second layer contains 30 or less atomic percent of carbon in a state where carbon is chemically bonded to aluminum.