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Semiconductor device having an improved air-bridge lead structure

  • US 5,148,260 A
  • Filed: 09/07/1990
  • Issued: 09/15/1992
  • Est. Priority Date: 09/07/1989
  • Status: Expired due to Term
First Claim
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1. A semiconductor device having an air-bridge lead structure comprising:

  • a semiconductor substrate having a surface;

    a plurality of electrodes formed on the surface of said semiconductor substrate; and

    an air-bridge lead electrically connected between said plural electrodes, said air-bridge lead having at least a first metal layer and a second metal layer, said first metal layer being integrally formed over an entire bottom length of said air-bridge lead and said second metal layer being formed on top of said first metal layer, said first metal layer having a Young'"'"'s modulus higher than that of said second metal layer, and said second metal layer having a specific electric resistance lower than that of said first metal layer.

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