Semiconductor device having an improved air-bridge lead structure
First Claim
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1. A semiconductor device having an air-bridge lead structure comprising:
- a semiconductor substrate having a surface;
a plurality of electrodes formed on the surface of said semiconductor substrate; and
an air-bridge lead electrically connected between said plural electrodes, said air-bridge lead having at least a first metal layer and a second metal layer, said first metal layer being integrally formed over an entire bottom length of said air-bridge lead and said second metal layer being formed on top of said first metal layer, said first metal layer having a Young'"'"'s modulus higher than that of said second metal layer, and said second metal layer having a specific electric resistance lower than that of said first metal layer.
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Abstract
A semiconductor device having an improved air-bridge lead structure is provided. The improved air-bridge lead structure has a higher mechanical strength and a lower electric resistance with a smaller electric capacitance.
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Citations
10 Claims
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1. A semiconductor device having an air-bridge lead structure comprising:
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a semiconductor substrate having a surface; a plurality of electrodes formed on the surface of said semiconductor substrate; and an air-bridge lead electrically connected between said plural electrodes, said air-bridge lead having at least a first metal layer and a second metal layer, said first metal layer being integrally formed over an entire bottom length of said air-bridge lead and said second metal layer being formed on top of said first metal layer, said first metal layer having a Young'"'"'s modulus higher than that of said second metal layer, and said second metal layer having a specific electric resistance lower than that of said first metal layer. - View Dependent Claims (2, 3, 4, 5)
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6. A semiconductor device having an air-bridge lead structure comprising:
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a semiconductor substrate having a surface; a plurality of electrodes formed on the surface of said semiconductor substrate; a first air-bridge lead layer connected between said plurality of electrodes; a second air-bridge lead layer formed on said first air-bridge lead layer; and said first air-bridge lead layer having a Young'"'"'s modulus higher than that of said second air-bridge lead layer, and said second air-bridge lead layer having a specific electric resistance lower than that of said first air-bridge lead layer, said first metal layer being integrally formed over an entire bottom length of said air-bridge lead and said second metal layer being formed on top of said first metal layer. - View Dependent Claims (7, 8, 9, 10)
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Specification