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Selective chemical vapor deposition of tungsten for microdynamic structures

  • US 5,149,673 A
  • Filed: 09/19/1991
  • Issued: 09/22/1992
  • Est. Priority Date: 02/21/1989
  • Status: Expired due to Fees
First Claim
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1. A method of forming a microdynamic structure, comprising:

  • forming on a top surface of a substrate wafer a first dielectric layer;

    forming a second layer of silicon dioxide on a top surface of said first layer to produce a composite dielectric wafer;

    patterning and etching said composite dielectric wafer to produce at least one channel in said wafer, said channel extending partially through said second layer and having a bottom wall in said silicon dioxide layer, the bottom wall being spaced above said top surface of said first layer;

    implanting silicon in said silicon dioxide bottom wall of said channel;

    selectively depositing a refractory metal in said channel to fill said channel;

    depositing an isolation mask on said first layer to and on said refractory metal to mask said refractory metal in said channel;

    etching said silicon dioxide layer in the region surrounding at least a part of said metal-filled channel to produce a cavity and to free said metal to provide a cantilever beam extending into said cavity.

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