Heterojunction field-effect transistor

• US 5,151,757 A
• Filed: 10/24/1991
• Issued: 09/29/1992
• Est. Priority Date: 10/26/1990
• Status: Expired due to Term

• Current Assignee: Nippon Telegraph and Telephone Corporation
• Original Assignee: Nippon Telegraph and Telephone Corporation
• Inventors: Shigekawa, Naoteru, Enoki, Takatomo, Arai, Kunihiro
• Primary Examiner(s): WOJCIECHOWICZ, EDWARD JOSEPH
• Application Number:
  US07/781,851
• Time in Patent Office: 341 Days
• Field of Search: 357/15, 357/16, 357/22
• US Class Current: 257/194
• CPC Class Codes: H01L 29/7785 with more than one donor layer

Abstract

A heterojunction field-effect transistor includes a first electron transit channel formation semiconductor layer formed on a substrate and consisting of a compound semiconductor, a first electron supply semiconductor layer formed on the first electron transit channel formation semiconductor layer and consisting of a compound semiconductor, a gate electrode, a source electrode, and a drain electrode formed on the first electron supply semiconductor layer, and a second electron transit channel formation semiconductor layer formed between the substrate and the first electron transit channel formation semiconductor layer. The second electron transit channel formation semiconductor layer consists of a cmpound semiconductor which has electron affinity smaller than that of the first electron transit channel formation semiconductor layer and larger than that of the first electron supply semiconductor layer, and is different from the first electron transit channel formation semiconductor layer in field strength position where a maximum value of an electron velocity is obtained, and is arranged such that an energy level on a bottom of an electron conduction band of the second electron transit channel formation seimconductor layer is substantially the same as a Fermi level.

Claims

1. A heterojunction field-effect transistor comprising:

a first electron transit channel formation semiconductor layer formed on a substrate and consisting of a compound semiconductor;

a first electron supply semiconductor layer formed on said first electron transit channel formation semiconductor layer and consisting of a compound semiconductor;

a gate electrode, a source electrode, and a drain electrode formed on said first electron supply semiconductor layer; and

a second electron transit channel formation semiconductor layer formed between said substrate and said first electron transit channel formation semiconductor layer,

wherein said second electron transit channel formation semiconductor layer consists of a compound semiconductor which has electron affinity smaller than that of said first electron transit channel formation semiconductor layer and larger than that of said first electron supply semiconductor layer, and is different from said first electron transit channel formation semiconductor layer in field strength position where a maximum value of an electron velocity is obtained, and is arranged such that an energy level on a bottom of an electron conduction band of said second electron transit channel formation semiconductor layer is substantially the same as a Fermi level.

2. A transistor according to claim 1, wherein said second electron transit channel formation semiconductor layer consists of a compound semiconductor doped with an n-type impurity.

3. A transistor according to claim 2, further comprising a spacer semiconductor layer formed between said first and second electron transit channel formation semiconductor layers,

wherein said spacer semiconductor layer prevents electrons transiting in said first electron transit channel formation semiconductor layer from being scattered by the impurity in said second electron transit channel formation semiconductor layer.

4. A transistor according to claim 1, wherein said second electron transit channel formation semiconductor layer consists of a nondoped compound semiconductor.

5. A transistor according to claim 1, further comprising a second electron supply semiconductor layer formed between said second electron transit channel formation semiconductor layer and said substrate and consisting of an n-type impurity.

6. A transistor according to claim 5, wherein said second electron transit channel formation semiconductor layer consists of a nondoped compound semiconductor.

7. A transistor according to claim 5, further comprising a spacer semiconductor layer formed between said second electron transit channel formation semiconductor layer and said second electron supply semiconductor layer,

wherein said spacer semiconductor layer prevents electrons transiting in said second electron transit channel formation semiconductor layer from being scattered by the impurity in said second electron supply semiconductor layer.

8. A transistor according to claim 1, further comprising a spacer semiconductor layer formed between said first electron supply semiconductor layer and said first electron transit channel formation semiconductor layer,

wherein said spacer semiconductor layer prevents electrons transiting in said first electron transit channel formation semiconductor layer from being scattered by the impurity in said first electron supply semiconductor layer.

9. A transistor according to claim 1, further comprising a buffer semiconductor layer formed between said second electron transit channel formation semiconductor layer and said substrate.