Acceleration and vibration sensor and method of making the same

• US 5,151,763 A
• Filed: 12/21/1990
• Issued: 09/29/1992
• Est. Priority Date: 01/15/1990
• Status: Expired due to Fees

• Current Assignee: Robert Bosch GmbH
• Original Assignee: Robert Bosch GmbH
• Inventors: Warth, Martin, Haack, Dietmar, Marek, Jiri, Bantien, Frank
• Primary Examiner(s): James, Andrew J.
• Assistant Examiner(s): Crane, Sara W.
• Application Number:
  US07/631,623
• Time in Patent Office: 648 Days
• Field of Search: 357/25, 357/26, 357/14, 73/517 AV, 73/517 B, 73/517 A, 73/517 R, 361/280
• US Class Current: 257/415
• CPC Class Codes: G01H 11/06 by electric means
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/125 by capacitive pick-up
• CPC Class Codes: G01P 2015/0814 for translational movement of the mass, e.g. shuttle type
• CPC Class Codes: H04R 19/005 using semiconductor materials

Abstract

A semiconductor plate having an epitaxial layer of a conductivity type opposite to that of the substrate on which it is formed has a depression, including one or more elongate channels. The depression is etched into a depth passing entirely through the epitaxial layer to isolate at least one tongue extending from a tongue pedestal into the etched depression and having parallel major sides which are perpendicular to the principal planes of the semiconductor plate. The tongue is under-etched so that it will be free to vibrate by motion in directions parallel to the principal planes of the plate. One of the major sides of the tongue faces a stationary electrode across a gap and the electrode and the tongue are insulated from each other, at least in one embodiment, by the fact that the etched depression extends all the way through the epitaxial layer in its depth. Deflection or vibration of the tongue changes the capacitance between the electrode and the tongue and contacts are provided for measuring the capacitance. Various embodiments utilizing multiple tongues and one or more electrodes are shown.

Claims

1. A sensor for measurement of vibration or acceleration which is manufactured from a base plate of monocrystalline semiconductive material consisting of silicon containing minor amounts of other elements for affecting the conductivity types (p or n) of the material and having at least one tongue (12) etched out of said base plate and means for evaluating a deflection of said at least one tongue, characterized

in that said base plate comprises an upper layer (20) and a lower layer (21) which on account of n-type or p-type doping of said lower layer provides a pn junction in the case of said n-type doping or an np junction in the case of said p-type doping at its junction with said lower layer (21);

in that said at least one tongue has major sides perpendicular to a face surface of said base plate, has at least one major side facing, across a gap, a surface of said at least one electrode, has a firm root end which is integral with said base plate and has a free end longitudinally opposite to said root end, said electrode surface facing said tongue being perpendicular to a face surface of said base plate, said at least one tongue (12) and said at least one electrode (13) being formed entirely in said upper layer (20);

in that the surfaces respectively of said at least one tongue and of said at least one electrode are of said material consisting of silicon containing minor amounts of other elements;

in that said at least one tongue (12) and said at least one electrode (13) are insulated from each other by etched channels which extend in depth completely through said upper layer (20), and

in that, by virtue of electrical connections to said at least one tongue and said at least one electrode, a capacitance change between said at least one tongue and said at least one electrode is measurable, whereby the deflection of said tongue by vibration or acceleration of said base plate is measurable.

3. The sensor of claim 1, wherein a plurality of tongues etched out of said base plate are provided and wherein said electrode is faced by a plurality of said tongues.

5. The sensor of claim 1, wherein there are provided a plurality of said tongues (12) and a plurality of electrodes (13) each said electrode being faced by a side of one of said tongues, half the number of tongues having a side facing a first electrode and the remainder of said tongues having a side facing a second electrode, said electrodes being disposed with respect to said tongues so that, in response to acceleration or vibration, a movement relative to said first electrode by said tongues having a side facing said first electrode is opposite to a contemporary movement relative to said second electrode by said remainder of said tongues with respect to said second electrode.

7. The sensor of claim 5, wherein said electrodes have a configuration in which they extend in comb configuration from the common electrode connecting member and wherein said tongues are disposed in a configuration in which there is at least one pedestal member, from which said tongues extend in comb configuration from said pedestal member.

9. The sensor of claim 1, wherein said at least one tongue having the side facing said electrode has another side facing a second electrode, whereby movement of said at least one tongue in response to vibration or acceleration will move said tongue simultaneously closer to one of said electrodes and away from the other of said electrodes.

2. A sensor for measurement of vibration or acceleration which is manufactured from a base plate of monocrystalline semiconductive material consisting of silicon containing minor amounts of other elements for affecting the conductivity types (p or n) of the material and having at least one tongue (12) etched out of said base plate and means for evaluating a deflection of said at least one tongue, characterized

in that said base plate comprises an upper layer (21) and a lower layer (20) which on account of n-type or p-type doping of said lower layer provides a pn junction in the case of said n-type doping or an np junction in the case of said p-type doping at its junction with said lower layer (21);

in that said at least one tongue has major sides perpendicular to a face surface of said base late, has at least one major side facing, across a gap, a surface of said at least one electrode, has a firm root end which is integral with said base plate and has a free end longitudinally opposite to said root end, said electrode surface facing said tongue being perpendicular to a face surface of said base plate, said at least one tongue (12) and said at least one electrode (13) are formed entirely in said upper layer (20);

in that the surfaces respectively of said at least one tongue and of said at least one electrode are of said material consisting of silicon containing minor amounts of the elements;

in that said at least one tongue (12) and said at least one electrode (13) are insulated from each other by diffused isolation barriers (23) which extend in depth completely through said upper layer (20), and

in that by virtue of electrical connections to said at least one tongue and said at least one electrode, a capacitance change between said at least one tongue and said at least one electrode is measurable, whereby the deflection of said tongue by vibration or acceleration of said base plate is measurable.

4. The sensor of claim 2, wherein a plurality of tongues etched out of said base plate are provided and wherein said electrode is faced by a plurality of said tongues.

6. The sensor of claim 2, wherein there are provided a plurality of said tongues (12) and a plurality of electrodes (13) each said electrode being faced by a side of one said tongues, half the number of tongues having a side facing a first electrode and the remainder of said tongues having a side facing a second electrode, said electrodes being disposed with respect to said tongues so that, in response to acceleration or vibration, a movement relative to said first electrode by said tongues having a side facing said first electrode is opposite to a contemporary movement relative to said second electrode by said remainder of said tongues with respect to said second electrode.

8. The sensor of claim 6, wherein said electrodes have a configuration in which they extend in comb configuration from the common electrode connecting member and wherein said tongues are disposed in a configuration in which there is at least one pedestal member, from which said tongues extend in comb configuration from said pedestal member.

10. The sensor of claim 2, wherein said at least one tongue having the side facing said electrode has another side facing a second electrode, whereby movement of said at least one tongue in response to vibration or acceleration ill move said tongue simultaneously closer to one of said electrodes and away from the other of said electrodes.