Device for detecting position of a light source with source position adjusting means

• US 5,153,419 A
• Filed: 04/15/1991
• Issued: 10/06/1992
• Est. Priority Date: 04/22/1985
• Status: Expired due to Term

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Takahashi, Kazuhiro
• Primary Examiner(s): Nelms, David C.
• Application Number:
  US07/684,496
• Time in Patent Office: 540 Days
• Field of Search: 250/201, 250/203 R, 250/204, 250/205, 250/208, 250/209, 250/216, 250/201.1, 250/203.3, 250/208.2, 355/67, 355/68, 362/268
• US Class Current: 250/201.1
• CPC Class Codes: G03F 7/70141 Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
• CPC Class Codes: H01L 21/681 using optical controlling means

Abstract

A device for detecting the position of a light source of an illumination optical system. The position detecting system of the present invention is particularly suitable for use in the detection of any positional deviation, from a correct position, of a Hg lamp used in a semiconductor device manufacturing exposure apparatus. The device includes an optical system for forming a plane which is optically conjugate with the surface of an object to be illuminated and a member disposed in such a plane and having a pinhole. The light emitted from the light source and passed through the pinhole is received by a photodetector, whereby the positional deviation of the light source is accurately detected. In another aspect of the invention, the detected positional deviation of the light source is automatically adjusted.

Claims

1. An illumination device for illuminating an object, comprising:

a light source;

an illumination optical system for illuminating the object by use of light from said light source, said illumination optical system having secondary light source forming means arranged to receive the light from said light source to form a plurality of secondary light sources;

means for detecting the symmetry of a distribution of the intensity of light from said secondary light sources, formed by said secondary light source forming means, with respect to the center of said secondary light source forming means; and

a half mirror for separating a portion of the light from said secondary light sources for illuminating the object and for directing the separated portion along a path different from that on which the object is illuminated, said detecting means detecting the symmetry of the intensity of light converging upon a point in a plane on said path, said plane being positioned at a location equivalent to the object, thereby to detect the symmetry of the intensity distribution of the light from said secondary light sources.

3. A device according to claim 1, further comprising a controller for controlling the position of said light source, on the basis of the detection by said detecting means.

2. An illumination device for illuminating an object, comprising:

a light source;

an illumination optical system for illuminating the object by use of light from said light source, said illumination optical system having secondary light source forming means arranged to receive the light from said light source to form a plurality of secondary light sources, and an optical arrangement, having an optical axis, effective to direct light from said secondary light sources to the object;

means for detecting the symmetry of a distribution of the light from said secondary light sources, formed by said secondary light source forming means, with respect to the optical axis of said optical arrangement; and

a half mirror for separating a portion of the light from said secondary light sources for illuminating the object and for directing the separated portion along a path different from that on which the object is illuminated, said detecting means detecting the symmetry of the intensity of light converging upon a point in a plane on said path, said plane being positioned at a location equivalent to the object, thereby to detect the symmetry of the intensity distribution of the light from said secondary light sources.

4. A device according to claim 2, further comprising a controller for controlling the position of said light source, on the basis of the detection by said detecting means.

5. An illumination device for illuminating an object comprising:

a light source;

an illumination optical system having secondary light source forming means arranged to receive light from said light source to form a plurality of secondary light sources providing light for illumination of the object;

means for detecting a distribution of light intensity of the secondary light sources formed by said secondary light source forming means; and

a controlling arrangement for controlling the position of said light source, on the basis of the detection by said detecting means.

6. An illumination device for illuminating an object comprising:

a light source;

an illumination optical system having secondary light source forming means arranged to receive light from said light source to form a plurality of secondary light sources providing light for illumination of the object;

means for detecting a light intensity distribution at a light emitting surface of said secondary light source forming means; and

a controlling arrangement for controlling the position of said light source, on the basis of the detection by said detecting means.

7. An illumination device for illuminating an object comprising:

a light source;

an illumination optical system having secondary light source forming means arranged to receive light from said light source to form a plurality of secondary light sources providing light for illumination of the object;

means for detecting a light intensity distribution in a secondary light source plane in which the secondary light sources are formed by said secondary light source forming means; and

a controlling arrangement for controlling the position of said light source, on the basis of the detection by said detecting means.

8. An apparatus for exposing a wafer to a mask with light, said apparatus comprising:

a light source for emitting light;

illumination means for illuminating the mask with light from said light source, said illumination means comprising an optical integrator for dividing the light from said light source to define a plurality of secondary light sources having a predetermined light intensity distribution on a predetermined plane and an optical system for directing light flux from the plurality of secondary light sources to the mask and for superposing the directed light flux one upon another on the mask;

detecting means comprising a light receiver for detecting an error in symmetry of light intensity distribution upon the predetermined plane with respect to an optical axis of said illumination means, by receiving light from said plurality of secondary light sources through said light receiver; and

an adjuster for adjusting the position of said light source relative to said optical integrator to correct for error in symmetry of the light intensity distribution on the predetermined plane.

9. An apparatus for exposing a wafer to a mask with light, said apparatus comprising:

a lamp for emitting light;

an optical integrator for receiving and dividing received light;

a collecting optical system comprising a reflector for directing light from said lamp to said optical integrator, such that said optical integrator divides the received light to define a plurality of secondary light sources on a predetermined plane;

an optical system for directing light flux from the plurality of secondary light sources to the mask and for superposing the directed light flux one upon another on the mask, said optical system comprising a half mirror for extracting a portion of the light from the plurality of secondary light sources;

photoelectric converting means for receiving the extracted light to produce a signal corresponding to light intensity distribution of the received light, wherein the light extracted by said half mirror and received by said photoelectric converting means essentially consists of light rays advancing in the same direction;

detecting means, responsive to the signal produced by said photoelectric converting means, for detecting error in symmetry of the light intensity distribution on the predetermined plane; and

an adjuster for adjusting the position of said lamp relative to said optical integrator to correct for error in symmetry of the light intensity distribution on the predetermined plane.

10. An apparatus according to claim 9, wherein said photoelectric converting means comprises a stop member having a pinhole, a lens for focusing light to a point proximate the pinhole, and a sensor having a plurality of light receiving portions for receiving light divergently advancing from the point.

11. An apparatus according to claim 9, wherein said detecting means comprises a display.

12. An apparatus according to claim 9, wherein said adjuster comprises means for displacing said lamp in a direction along, and perpendicular to, an optical axis of said collecting optical system.

13. An exposure method for illuminating a mask with light to expose a wafer to light passing through the mask by using light from a light source to define a plurality of secondary light sources on a predetermined plane and by illuminating the mask with light from the secondary light sources, said method comprising the steps of:

detecting a light intensity distribution of light rays, of the light from the secondary light sources, advancing in a predetermined direction;

detecting error in symmetry of the light intensity distribution on the predetermined plane on the basis of the detected light intensity distribution of the light rays;

adjusting the position of the light source relative to the predetermined plane in response to the detection of the error in symmetry of the light intensity distribution on the predetermined plane, to correct the error; and

superposing light flux from the secondary light sources having a corrected symmetrical light intensity distribution, one upon another on the mask, for substantially uniformly illuminating the mask.

14. An exposure apparatus for exposing a mask and a wafer with a radiation beam to thereby print a pattern of the mask on the wafer, said apparatus comprising:

beam supplying means for supplying the radiation beam;

secondary light source forming means for receiving the radiation beam from said beam supplying means to thereby form a secondary light source;

an optical system for illuminating the mask with a radiation beam from said second light source;

detecting means for receiving any of the radiation beam from said secondary light source and for detecting an error in symmetry of an intensity distribution of said secondary light source; and

correcting means for substantially correcting the error in symmetry of the intensity distribution of said secondary light source.

15. An apparatus according to claim 14, wherein said beam supplying means comprises a lamp for emitting the radiation beam and an optical system for projecting the radiation beam from said lamp to said secondary light source forming means.

16. An apparatus according to claim 15, wherein said correcting means comprises driving means for changing the position of said lamp.

17. An apparatus according to claim 14, wherein said secondary light source forming means comprises an optical integrator for dividing the received radiation beam into a plurality of radiation beams.

18. An apparatus according to claim 17, wherein said optical integrator comprises a lens array.

19. An apparatus according to claim 18, wherein said beam supplying means comprises a lamp for emitting the radiation beam and an optical system for projecting a radiation beam from said lamp to said secondary light source forming means.

20. An apparatus according to claim 19, wherein said correcting means comprises driving means for changing the position of said lamp.

21. A semiconductor device manufacturing method wherein a radiation beam from a radiation source is transformed into a secondary light source having an intensity distribution and wherein a mask and a wafer are exposed with a radiation beam from the secondary light source to thereby print a pattern of the mask on the wafer, said method comprising the steps of:

detecting the radiation beam from the secondary light source to detect an error in symmetry of the intensity distribution of the secondary light source; and

adjusting the intensity distribution of the secondary light source to assure a substantially symmetrical intensity distribution of the secondary light source.

22. A method according to claim 21, further comprising forming the secondary light source by using a lens array for dividing a received radiation beam into a plurality of radiation beams, and directing the plurality of radiation beams to the mask such that the plurality of beams are superposed one upon another on the mask.

23. A method according to claim 21, wherein said error compensating step is based on changing the position of the radiation source.

24. An exposure apparatus for exposing a wafer to a mask with a radiation beam to print a pattern of the mask on the wafer, said apparatus comprising:

beam supplying means for supplying the radiation beam;

secondary light source forming means for receiving the radiation beam from said beam supplying means to form a secondary light source;

an optical system for illuminating the mask with a radiation beam from said secondary light source; and

detecting means for detecting an intensity distribution of any of the radiation beam from said secondary light source, with respect to a plane which is located off a position of the mask and off a position optically conjugate with the mask.

25. An apparatus according to claim 24, wherein said detecting means comprises a plurality of photoelectric converting devices.

26. An apparatus according to claim 25, further comprising a stop having a pinhole, disposed between said secondary light source and said detecting means and disposed at a position optically conjugate with the mask, wherein each of said photoelectric converting devices receives a portion of the radiation beam passing through the pinhole of said stop.

27. An apparatus according to claim 24, further comprising means for detecting symmetry of the intensity distribution of the secondary light source, on the basis of the detection by said detecting means.

28. An apparatus according to claim 24, further comprising means for adjusting the intensity distribution of said secondary light source.

29. An apparatus according to claim 27, further comprising means for adjusting the intensity distribution of said secondary light source.

30. In a semiconductor device manufacturing method usable with a mask and a wafer, wherein a radiation beam from a radiation source provides a secondary light source having an intensity distribution and wherein the wafer is exposed to the mask with a radiation beam from the secondary light source to print a pattern of the mask on the wafer, the improvement comprising the steps of:

detecting an intensity distribution of any of the radiation beam from the secondary light source, with respect to a plane which is located off a position of the mask and off a position optically conjugate with the mask, to evaluate the intensity distribution of the secondary light source on the basis of the detection; and

adjusting the intensity distribution of the secondary light source in accordance with the evaluation.

31. In a semiconductor device manufacturing method usable with a mask and a wafer, wherein a radiation beam from a radiation source provides a secondary light source having an intensity distribution and wherein the wafer is exposed to the mask with a radiation beam from the secondary light source to print a pattern of the mask on the wafer, the improvement comprising the steps of:

detecting an intensity distribution of any of the radiation beam from the secondary light source, with respect to a plane which is off a position of the mask and off a position optically conjugate with the mask, to detect a balance of the intensity distribution of the secondary light source with respect to a center of the secondary light source; and

adjusting the intensity distribution of the secondary light source when any unbalance of the secondary light source is detected.

32. In a semiconductor device manufacturing method usable with a mask and a wafer, wherein a radiation beam from a radiation source provides a secondary light source having an intensity distribution and wherein the wafer is exposed to the mask with a radiation beam from the secondary light source to print a pattern of the mask on the wafer, the improvement comprising the steps of:

detecting an intensity distribution of any of the radiation beam from the secondary light source, with respect to a plane which is located off a position of the mask and off a position optically conjugate with the mask, to detect symmetry of the intensity distribution of the secondary light source; and

adjusting the intensity distribution of the secondary light source when any asymmetry of the secondary light source is detected.