Magnetic field sensor contacts

• US 5,153,557 A
• Filed: 01/28/1991
• Issued: 10/06/1992
• Est. Priority Date: 01/28/1991
• Status: Expired due to Term

• Current Assignee: General Motors Corporation (General Motors Company)
• Original Assignee: General Motors Corporation (General Motors Company)
• Inventors: Partin, Dale L., Heremans, Joseph P.
• Primary Examiner(s): Lateef, Marvin M.
• Application Number:
  US07/654,130
• Time in Patent Office: 617 Days
• Field of Search: 338/32 R, 338/32 H, 324/207.21, 324/244, 324/252
• US Class Current: 338/32.00R
• CPC Class Codes: H10N 50/80 Constructional details

Abstract

A magnetic field sensor, such as a magnetoresistor, Hall effect device or magnetotransistor, comprising an active layer of indium antimonide on the surface of a substrate having a length substantially greater than its width. A conductive contact is on the active layer at each end thereof and a plurality of shorting bar contacts are on the active layer and spaced along the length of the active layer between the end contacts. The contacts are each of a thin layer of a highly conductive n-type conductivity semiconductor material which has a low sheet resistivity and a low contact resistance with the active layer. A layer of a conductive metal may be provided on the semiconductor material layer of the contact, and a thin layer of highly conductive n-type indium antimonide may be provided between the semiconductive material layer and the active layer.

Claims

1. A magnetic field sensor comprising:

a substrate having a surface;

an active layer of indium antimonide on said substrate surface;

a conductive contact on said active layer, said contact comprising a thin layer of an n-type conductivity semiconductor material which is highly conductive so as to have a low sheet resistance and a low contact resistance with the active layer, wherein the semiconductor material of the contact has a lattice constant close to that of indium antimonide; and

a thin layer of a highly doped n-type indium antimonide between the semiconductor material and the active layer.

2. The magnetic field sensor of claim 1 further comprising a layer of a conductive metal on the semiconductor material layer.

3. The magnetic field sensor of claim 2 further comprising a thin layer of highly doped n-type indium antimonide between the semiconducor material layer and the active layer.

4. The magnetic field sensor of claim 1 in which the semiconductor material layer and the highly doped indium antimonide layer of the contact are each of a thickness of between 100 and 2000 Angstroms.

5. The magnetic field sensor of claim 4 in which the active layer is of a thickness of no greater than 5 micrometers.

6. A magnetoresistor comprising:

a substrate having a surface;

a narrow active layer of n-type conductivity indium antimonide on said substrate surface having a length substantially greater than its width;

a conductive contact on said active layer at each end thereof; and

a plurality of shorting bar contacts on said active layer spaced along the length of the active layer between the end contacts;

each of said shorting bar contacts comprising a thin layer of an n-type conductivity semiconductor material which is highly conductive so as to have a low sheet resistance and a low contact resistance with the active layer, wherein the semiconductor material of the contact has a lattice constant close to that of indium antimonide; and

a thin layer of highly doped n-type indium antimonide between the semiconductor material layer and the active layer.

7. The magnetoresistor of claim 6 further comprising a layer of a conductive metal on the semiconductor material layer.

8. The magnetoresistor of claim 6 further comprising a layer of highly doped n-type indium antimonide between the semiconductor material layer and the active layer.

9. The magnetoresistor of claim 8 in which the semiconductor material layer and the highly doped indium antimonide layer of the contact are each of a thickness of between 100 and 2000 Angstroms.

10. The magnetoresistor of claim 8 in which each of the end contacts comprises a layer of the highly conductive n-type semiconductor material on the active layer.

11. The magnetoresistor of claim 10 in which each of the end contacts further comprises a layer of a conductive metal over the semiconductor material layer.

12. The magnetoresistor of claim 11 in which each of the end contacts further comprises a layer of highly conductive n-type indium antimonide between the semiconductor material layer and the active layer.

13. A magnetoresistor comprising:

a substrate having a surface;

a narrow active layer of n-type conductivity indium antimonide on said substrate surface, said active layer having a length substantially greater than its width;

a conductive contact on said active layer at each end thereof;

a plurality of shorting bar contacts on said active layer spaced along the length of the active layer between the end contacts;

each of said end contacts comprising a thin layer of an n-type conductivity semiconductor material which is highly conductive so as to have a low sheet resistance and a low contact resistance with the active layer, wherein the semiconductor material of the contact has a lattice constant close to that of the indium antimonide; and

a thin layer of highly doped n-type indium antimonide between the semiconductor material layer of the contact and the active layer.

14. The magnetoresistor of claim 13 further comprising a layer of a conductive metal on the semiconductor material layer of the contact.

15. The magnetoresistor of claim 14 further comprising a thin layer of highly doped n-type indium antimonide between the semiconductor material layer of the contact and the active layer.

16. The magnetoresistor of claim 15 in which the semiconductor material layer and the highly doped indium antimonide layer of the contact are each of a thickness of between 100 and 2000 Angstroms.