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Thin-film device

  • US 5,153,690 A
  • Filed: 10/15/1990
  • Issued: 10/06/1992
  • Est. Priority Date: 10/18/1989
  • Status: Expired due to Fees
First Claim
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1. A thin-film device comprising a substrate, a gate electrode formed on said substrate, a gate insulator formed on said gate electrode, a channel region consisting of a semiconductor layer formed on said gate insulator, and a source electrode and a drain electrode formed on said semiconductor layer, wherein said substrate is an insulating substrate, and wherein said gate electrode has a first gate electrode and a second gate electrode which are electrically insulated from each other, said first gate electrode being provided on said second gate electrode such that a coupling capacitance can be provided between the first and second gate electrodes, and a signal is applied to the second gate electrode so as to apply the signal to the first gate electrode via the coupling capacitance, the coupling capacitance being formed at least at a location away from the channel region.

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