Semiconductor light emitting device

• US 5,153,889 A
• Filed: 08/19/1991
• Issued: 10/06/1992
• Est. Priority Date: 05/31/1989
• Status: Expired due to Term

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Ishikawa, Masayuki, Naritsuka, Shigeya, Suzuki, Mariko, Itaya, Kazuhiko, Nishikawa, Yukie, Sugawara, Hideto, Hatakoshi, Genichi, Kokubun, Yoshihiro
• Primary Examiner(s): Epps, Georgia Y.
• Application Number:
  US07/747,128
• Time in Patent Office: 414 Days
• Field of Search: 372/46, 372/46, 357/16, 357/17
• US Class Current: 372/45.01
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 33/0025 comprising only AIIIBV compounds
• CPC Class Codes: H01L 33/0066 with a substrate not being a III-V compound
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/14 with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/30 containing only elements of Group III and Group V of the Periodic Table

Abstract

Disclosed is a semiconductor light emitting device, comprising a semiconductor substrate, a double hetero structure portion formed on the front surface of the substrate and consisting of an InGaAlP active layer and lower and upper clad layers having the active layer sandwiched therebetween, a first electrode formed in a part of the surface of the double hetero structure portion, and a second electrode formed on the back surface of the substrate. A current diffusion layer formed of GaAlAs is interposed between the double hetero structure portion and the first electrode, said current diffusion layer having a thickness of 5 to 30 microns and a carrier concentration of 5×10¹⁷ cm^-3 to 5×10¹⁸ cm^-3.

Claims

1. A semiconductor light emitting device, comprising a semiconductor substrate, a double hetero structure portion formed on the substrate and consisting of an InGaAsP active layer and upper and lower clad layers having the active layer sandwiched therebetween, a first electrode formed on a part of the surface of the double hetero structure portion, and a second electrode formed on the surface of the substrate opposite to the double hetero structure portion, wherein the active layer is set to be of p-type having a carrier concentration of 1×

10¹⁷ cm^-3 or less and has a thickness falling within a range of between 0.05 and 0.75 micron, and a current spreading layer is interposed between the double hetero structure portion and the first electrode.

2. The semiconductor light emitting device according to claim 1, wherein the substrate is formed of GaAs, and the planar direction of the substrate is inclined from the (100) plane by 10°

to 20°

in the direction of [011].

3. The semiconductor light emitting device according to claim 1, wherein a reflective layer and a transparent buffer layer are formed between the substrate and the double hetero structure such that the reflective layer is in contact with the substrate and the transparent buffer layer is formed in contact with the double hetero structure portion, and the transparent buffer layer has a thickness of 20 to 100 microns.

4. The semiconductor light emitting device according to claim 1, wherein said lower clad layer is of n-conductivity type and has a carrier concentration of 1×

10¹⁶ cm^-3 to 7×

10¹⁷ cm^-3, and said upper clad layer is of p-conductivity type and has a carrier concentration of 5×

10¹⁷ cm^-3 to 2×

10¹⁸ cm^-3.

5. The semiconductor light emitting device according to claim 1, wherein said active layer has a quantum well structure.

6. A semiconductor light emitting device, comprising a semiconductor substrate, a double hetero structure, portion formed on the substrate and consisting of an InGaAsP active layer and upper and lower clad layers having the active layer sandwiched therebetween, a first electrode formed on a part of the surface of the double hetero structure portion, and a second electrode formed on the surface of the substrate opposite to the double hetero structure portion, wherein a GaAlAs current diffusion layer is interposed between the double hetero structure portion and the first electrode, said current diffusion layer having a thickness of 5 to 30 microns and a carrier concentration of 5×

10¹⁷ cm^-3 to 5×

10¹⁸ cm^-3.

7. A semiconductor light emitting device, comprising a semiconductor substrate of a first conductivity type, a reflective layer of the first conductivity type formed on the front surface of the substrate, a transparent buffer layer of the first conductivity type formed on the reflective layer, a double hetero structure portion formed of an InGaAlP series material, positioned on the transparent buffer layer, and consisting of a lower clad layer of the first conductivity type, an upper clad layer of a second conductivity type and an active layer interposed between the lower and upper clad layers, a current spreading layer of the second conductivity type formed on the double hetero structure portion, a first electrode formed on the current spreading layer, a second electrode formed on the back surface of the substrate, and a current inhibiting layer of the first conductivity type formed in a part between the double hetero structure portion and the first electrode in a manner to face the first electrode.

8. A semiconductor light emitting device, comprising a semiconductor substrate, a double hetero structure portion formed on the front surface of the substrate and consisting of an InGaAlP active layer and lower and upper clad layers having the active layer sandwiched therebetween, a first electrode formed in a part of the surface of the double hetero structure portion, and a second electrode formed on the back surface of the substrate, wherein the substrate is formed of GaAs, and the planar direction of the crystal-growing major surface of the substrate is inclined from the (100) plane by at least 5°

in the [011] direction, and a current spreading layer is interposed between the double hetero structure portion and the first electrode.

9. A semiconductor light emitting device, comprising a semiconductor substrate, a double hetero structure portion formed on the front surface of the substrate and consisting of an InGaAlP active layer and lower and upper clad layers having the active layer sandwiched therebetween, a first electrode formed in a part of the surface of the double hetero structure portion, and a second electrode formed on the back surface of the substrate, wherein a current spreading layer is formed between the double hetero structure portion and the first electrode.

10. A semiconductor light emitting device, comprising a semiconductor substrate, a double hetero structure portion formed on the substrate and consisting of an InGaAsP active layer and upper and lower clad layers having the active layer sandwiched therebetween, a first electrode formed on a part of the surface of the double hetero structure portion, and a second electrode formed on the surface of the substrate opposite to the double hetero structure portion, wherein the active layer is set to be of n-type having a carrier concentration of 5×

10¹⁶ cm^-3 or less and has a thickness falling within a range of between 0.05 and 0.75 micron, and a current spreading layer is interposed between the double hetero structure portion and the first electrode.