Method of manufacturing a semiconductor MOSFET having a projection T-shaped semiconductor portion

• US 5,155,054 A
• Filed: 10/15/1991
• Issued: 10/13/1992
• Est. Priority Date: 09/28/1989
• Status: Expired due to Term

• Current Assignee: Oki Semiconductor Company Limited (ROHM Co., Ltd.)
• Original Assignee: OKI Electric Industry Company Limited
• Inventors: Itoh, Masahiro
• Primary Examiner(s): Hearn, Brian E.
• Assistant Examiner(s): Picardat, Kevin M.
• Application Number:
  US07/775,444
• Time in Patent Office: 364 Days
• Field of Search: 437/41, 437/42, 437/44, 437/45, 357/23.4
• US Class Current: 438/156
• CPC Class Codes: H01L 29/4236 within a trench, e.g. trench gate electrode, groove gate electrode
• CPC Class Codes: H01L 29/66666 Vertical transistors H01L29/66712, H01L29/66742 take precedence
• CPC Class Codes: H01L 29/7722 using static field induced regions, e.g. SIT, PBT
• CPC Class Codes: H01L 29/7827 Vertical transistors H01L29/7802, H01L29/78642 take precedence
• CPC Class Codes: H01L 29/78642 Vertical transistors

Abstract

A MOSFET having a projecting T-shaped semiconductor portion and a method of manufacturing the same. The MOSFET includes a semiconductor body having a first diffusion region of a first conductivity type, a T-shaped semiconductor portion projecting from the semiconductor body, a gate insulator film formed on a surface of said T-shaped portion, and a gate electrode formed on the gate insulator film. The top of the T provides a means by which contact can easily be made between a highly concentrated impurity region on the projecting portion and an electrode, even if the cross-sectional area of the base of the T is narrow. In a method of manufacturing the MOSFET a mask layer is placed on the semiconductor body with a hole which exposes the semiconductor body, a layer of semiconductor material is provided in the hole and on a portion of the mask layer around the hole so as to form the T-shaped portion, the mask layer is removed by the wet etching, a gate insulating layer is formed onside surfaces of the T-shaped portion, a gate electrode layer is formed on the gate insulating layer, and an impurity is introduced into the top of the T-shaped portion and a predetermined region of the semiconductor body located adjacent to the T-shaped portion.

Claims

1. A method of manufacturing a MOSFET having a projecting semiconductor portion, comprising the steps of:

(a) providing a semiconductor body;

(b) forming a mask layer on the semiconductor body, the mask layer having a hole which exposes the semiconductor body;

(c) forming a semiconductor layer with a base portion in the hole extending from the semiconductor body and with a t op portion on the mask layer around the hole, a cross section of the semiconductor layer having the shape of a T with a base along the base portion and a top along the top portion;

(d) removing the mask layer by wet etching to expose the surface of the base portion of the semiconductor layer;

(e) forming a gate insulating layer on the exposed surface of the base portion of the semiconductor layer;

(f) forming a gate electrode layer on the gate insulating layer; and

(g) introducing impurities into the top portion of the semiconductor layer and a predetermined region of the semiconductor body located adjacent to said semiconductor layer.

2. A method of manufacturing a MOSFET according to claim 1, wherein the semiconductor body is a polycrystalline silicon body.

3. A method of manufacturing a MOSFET according to claim 2, wherein said step of providing the semiconductor body comprises the steps of:

preparing a silicon substrate,

forming an oxide layer on the silicon substrate,

forming a nitride layer on the oxide layer, and

forming a polycrystalline silicon layer, which constitutes said polycrystalline silicon body, on the nitride layer.

4. A method of manufacturing a MOSFET according to claim 2, wherein said step of forming a semiconductor layer comprises the steps of:

depositing polycrystalline silicon in the hole and on the mask layer, and

removing portions of the polycrystalline silicon on the mask layer so as to retain only the polycrystalline silicon in the hole and on a portion of the mask layer around the hole.

5. A method of manufacturing a MOSFET according to claim 1, wherein the semiconductor body is a monocrystalline silicon body.

6. A method of manufacturing a MOSFET according to claim 5, wherein said step of providing the semiconductor body comprises the steps of:

providing a monocrystalline silicone substrate,

forming a field oxide layer on the monocrystalline silicon substrate,

forming a nitride layer on the field oxide layer and the monocrystalline silicon substrate,

removing the nitride layer formed on the silicon substrate.

7. A method of manufacturing a MOSFET according to claim 5, wherein said step of forming a semiconductor layer comprises the steps of:

growing silicon from an exposed surface of the exposed semiconductor body in the hole to fill the hole with silicon and to cover a surface portion of the mask layer around the hole with silicon.

8. A method of manufacturing a MOSFET according to claim 7, wherein said step of growing silicon is performed epitaxially.

9. A method of manufacturing a MOSFET according to claim 5, wherein said step of forming a semiconductor layer comprises the steps of:

depositing amorphous silicon in the hole and on the mask layer,

monocrystallizing the deposited amorphous silicon, and

removing some portions of the monocrystallized silicon so as to retain only portions of the monocrystallized silicon in the hole and on the oxide layer around the hole.

10. A method of manufacturing a MOSFET according to claim 9, wherein said step of monocrystallizing is performed by a solid phase epitaxial growth method.

11. A method of manufacturing a MOSFET according to claim 1, wherein said mask layer is an oxide layer.

12. A method of manufacturing a MOSFET according to claim 1, wherein said gate electrode layer has a cylindrical shape.

13. A method of manufacturing a MOSFET according to claim 1, wherein said step of forming a semiconductor layer comprises the steps of:

depositing polycrystalline silicon in the hole and on the mask layer, and

removing portions of the polycrystalline silicon on the mask layer so as to retain only the polycrystalline silicon in the hole and on a portion of the mask layer around the hole.

14. A method of manufacturing a MOSFET having a projecting semiconductor portion comprising the steps of:

providing a semiconductor body;

forming a mask layer on the semiconductor body with the mask layer having a hole which exposes a surface of the semiconductor body and which is defined by an interior surface of the mask layer;

forming a semiconductor layer having a first portion which is disposed in the hole, is connected to the semiconductor body and has a peripheral surface contacting said interior surface of the mask layer, and a second portion disposed on the first portion and extending laterally on the outer surface of the mask layer around the hole so that a cross section of the semiconductor layer has a T-shape with a base along the first portion and a top along the second portion;

removing the mask layer by wet etching to expose the peripheral surface of the first portion of the semiconductor layer;

forming a gate insulating layer on the peripheral surface of the first portion of the semiconductor layer;

forming a gate electrode layer on the gate insulating layer; and

introducing impurities into the second portion of the semiconductor layer and into a predetermined region of the semiconductor body disposed adjacent the first portion of the semiconductor layer to form source and drain regions.

15. A method of manufacturing a MOSFET as defined in claim 14 wherein:

said hole is cylindrical;

the step of removing the mask layer includes removing the mask layer to expose the entire peripheral surface of the first portion of the semiconductor layer; and

the steps of forming a gate insulating layer and a gate electrode layer include forming the respective layers completely around the first portion of the semiconductor layer, whereby the gate electrode has a cylindrical shape.