Thick, low-stress films, and coated substrates formed therefrom, and methods for making same

• US 5,156,909 A
• Filed: 11/28/1989
• Issued: 10/20/1992
• Est. Priority Date: 11/28/1989
• Status: Expired due to Fees

• Current Assignee: Battelle Memorial Institute
• Original Assignee: Battelle Memorial Institute
• Inventors: Knoll, Robert W., Henager, Charles H. Jr.
• Primary Examiner(s): Thibodeau, Paul J.
• Assistant Examiner(s): FOLLETT, ROBERT JOHN
• Application Number:
  US07/445,794
• Time in Patent Office: 1,057 Days
• Field of Search: 428/334, 428/336, 428/694, 428/698, 428/688, 428/689, 428/704
• US Class Current: 428/334
• CPC Class Codes: C23C 14/0036 Reactive sputtering
• CPC Class Codes: C23C 14/0641 Nitrides C23C14/0617 takes precedence
• CPC Class Codes: C23C 14/54 Controlling or regulating the coating process
• CPC Class Codes: H01L 23/298 Semiconductor material, e.g. amorphous silicon
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: Y10T 428/263 Coating layer not in excess of 5 mils thick or equivalent
• CPC Class Codes: Y10T 428/265 1 mil or less

Abstract

Stress-induced deformation, and the damage resulting therefrom, increases with film thickness. The overcoming of excessive stress by the use of the Si-Al-N film material of the present invention, permits the formation of thick films that are necessary for certain of the above described applications. The most likely use for the subject film materials, other than their specialized views as an optical film, is for microelectronic packaging of components on silicon substrates.

In general, the subject films have excellent adherence to the underlying substrate, a high degree of hardness and durability, and are excellent insulators. Prior art elevated temperature deposition processes cannot meet the microelectronic packaging temperature formation constraints. The process of the present invention is conducted under non-elevated temperature conditions, typically 500° C. or less.

Claims

1. A low stress film-coated substrate, which comprises a Si-Al-N-containing film material, having a thickness of at least 5 microns, and formed by depositing said film material onto an underlying surface of said substrate at a non-elevated temperature of up to about 500°

C., said film exhibiting a total film stress and a level of adherence to said substrate which avoids substantial cracking and debonding of said film and any resultant damage to said substrate.

said Si-Al-N containing film material having level of optical transparency in the visible and infrared ranges, the optical absorption coefficient of said material being up to about 30/cm at a wavelength of 750 n.m.

2. The substrate of claim 1, wherein said Si-Al-N-containing material comprises the structural formula Si_1-x Al_x N, wherein x is from about 0.1 up to about 0.6.

3. The substrate of claim 1, wherein the thermal conductivity of said material is at least about 1.0×

10^-3 W/cm/K.

4. The substrate of claim 1, wherein the total film stress of said material, measured in a film having a thickness of about 50 micron which has been deposited onto a Si underlying substrate, is less than about 100 MPa.

5. The substrate of claim 1, wherein the intrinsic elastic stiffness of said material is up to about 300 GPa.

6. The substrate of claim 1, wherein the optical transmissivity of said of said material is at least about 90% at a 800 n.m. wavelength for films of at least about a 50 micron thickness.

7. The substrate of claim 1, wherein the coefficient of thermal expansion of said material is up to about 3.8×

10^-6.

8. The substrate of claim 1, wherein the index of refraction of said material is from about 1.9 up to about 2.1.

9. The substrate of claim 1, wherein the actual density of said material is at least about 95% of the theoretical density of said material.

10. A low stress film material for deposition onto an underlying substrate, which comprises a Si-Al-N-containing film material, having a thickness of at least about 5 microns, and formed at a non-elevated temperature of up to about 500°

C., said film exhibiting a total film stress and a level of adherence when deposited on said substrate which avoids substantial cracking and debonding of said film and any resultant damage to said substrate, the optical transmissivity of said material being at least about 90% at a 800 n.m. wavelength for films of at least about a 50 micron thickness.

11. The material of claim 10, wherein said Si-Al-N-containing material comprises the structural formula Si_1-x Al_x N, wherein x is from about 0.1 up to about 0.6.

12. The material of claim 10, wherein said Si-Al-N containing material has a level of optical transparency in the visible and infrared ranges, the optical absorption coefficient of said material being up to about 20/cm at a wavelength of 750 n.m.

13. The material of claim 10, wherein the thermal conductivity of said material is at least about 1.0×

10^-3 W/cm/K.

14. The material of claim 10, wherein the total film stress of said material, measured in a film having a thickness of about 50 micron which has been deposited onto a Si underlying material, is less than about 100 MPa.

15. The material of claim 10, wherein the intrinsic elastic stiffness of said material is up to about 300 GPa.

16. The material of claim 10, wherein the coefficient of thermal expansion of said material is up to about 3.8×

10^-6.

17. The material of claim 10, wherein the index of refraction of said material is from about 1.9 up to about 2.1.

18. The material of claim 10, wherein the actual density of said material is at least about 95% of the theoretical density of said material.

19. A low stress film-coated substrate, which comprises a Si-Al-N-containing film material, having a thickness of at least 5 microns, and formed by depositing said film material onto an underlying surface of said substrate at a non-elevated temperature of up to about 500°

C., said film exhibiting a total film stress and a level of adherence to said substrate which avoids substantial cracking and debonding of said film and any resultant damage to said substrate, the index of refraction of said material being from about 1.9 up to about 2.1, sid si-Al-N containing material having a level of vertical transparency in the visible and infrared ranges, and an optical absorption coefficient of up to about 30/cm at wavelength of 750 n.m. and an optical transmissivity of at least about 90% at a 800 n.m. wavelength for films of at least about a 50 micron thickness.

20. The substrate of claim 19, wherein said Si-Al-N containing material comprises the structure formula Si_1-x Al_x N, wherein x is from about 0.1 up to about 0.6.

21. The substrate of claim 19, wherein said Si-Al-N containing material has a level of optical transparency in the visible and infrared ranges, the optical absorption coefficient of said material being up to about 20/cm at a wavelength of 750 n.m.

22. The substrate of claim 19, wherein the thermal conductivity of said material is at least about 1.0×

10^-3 W/cm/K.

23. The substrate of claim 22, wherein the total film stress of said material, measured in a film having a thickness of about 50 micron which has been deposited onto a Si underlying substrate, is less than about 100 MPa.

24. The substrate of claim 19, wherein the intrinsic elastic stiffness of said material is up to about 300 GPa.

25. The substrate of claim 19, wherein the optical transmissivity of said material is at least about 80% at a 600 n.m. wavelength for films of at least about a 50 micron thickness.

26. The substrate of claim 19, wherein the coefficient of thermal expansion of said material is up to about 3.8×

10^-6.

27. The substrate of claim 19, wherein the actual density of said material is at least about 95% of the theoretical density of said material.