Light emitting diode resistant to change in operating temperature

• US 5,157,468 A
• Filed: 08/09/1991
• Issued: 10/20/1992
• Est. Priority Date: 09/21/1990
• Status: Expired due to Term

• Current Assignee: Eastman Kodak Company
• Original Assignee: Eastman Kodak Company
• Inventors: Matsumoto, Kenji
• Primary Examiner(s): MINTEL, WILLIAM A
• Application Number:
  US07/742,822
• Time in Patent Office: 438 Days
• Field of Search: 357/17, 357/45, 357/16, 357/55, 357/28, 357/4, 346/107 R, 346/160, 346/1.1, 313/500, 362/800, 372/48, 372/50, 372/46, 372/45
• US Class Current: 257/98
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: Y10S 362/80 Light emitting diode

Abstract

A light emitting diode which does not readily cause an intensity of emitted light to fluctuate even when the operating temperature changes includes a substrate having thereon a light emitting layer and a reflector. The diode includes a light emitting layer which is of a composition which is adapted to generate and radiate light the intensity of which and the light emission spectrum changes of which depend on temperature. Over the light emitting layer is a reflector which is of a composition having a wavelength dependent characteristic which compensates for any such fluctuations in the light intensity and light emission spectrum of the light emitting layer. Direct light from the light emitting layer and light reflected by the reflector can be removed to the exterior of the diode to provide a light emission of uniform intensity even when the diode is subjected to changes in temperature.

Claims

1. A light emitting diode comprising:

a light emitting layer of a composition which is adapted to generate and emit light, the intensity and spectrum of which fluctuates in response to a change in temperature; and

a reflector of a composition having a light wavelength dependent characteristic by which temperature dependent fluctuations in intensity and spectrum of light emitted from said light emitting layer is compensated for, said reflector being across said light emitting layer so that direct light emitted from said light emitting layer and light which is radiated from said light emitting layer and is reflected by said reflector are emitted to the exterior of said diode.

2. The light emitting diode of claim 1 further comprising a substrate having a pair of opposed surfaces and said light emitting layer and said reflector are on said substrate.

3. The light emitting diode of claim 2 in which the light emitting layer and the reflector are on the same surface of said substrate.

4. The light emitting diode of claim 3 in which the reflector is of a multilayer film of either a semiconductor or a dielectric.

5. The light emitting diode of claim 2 in which said light emitting layer and said reflector are on opposite surfaces of said substrate.

6. The light emitting diode of claim 5 in which said reflector is of a multilayer film of either a semiconductor or a dielectric.

7. A light emitting diode comprising:

a light emitting layer of a composition which is adapted to generate and radiate light, the optical output of which drops in response to a rise in operating temperature and the light emission spectrum moves toward a longer wavelength side;

a reflector located in a position with respect to the light emitting layer to reflect light radiated from said light emitting layer and of a composition having a wavelength dependent reflectivity which becomes larger in a wavelength longer than the peak wavelength of the light emission spectrum of said light emitting layer; and

a window portion allowing to be admitted to the exterior of the light emitting diode direct light from said light emitting layer and light radiated from said light emitting layer and then reflected by said reflector.

8. The light emitting diode of claim 7 further comprising a substrate having a pair of opposed surfaces and said light emitting layer and said reflector are on said substrate.

9. The light emitting diode of claim 8 in which the light emitting layer and the reflector are on the same surface of said substrate.

10. The light emitting diode of claim 9 wherein said reflector is of a multilayer film of either a semiconductor or a dielectric.

11. The light emitting diode of claim 10 wherein said light emitting diode and said reflector are on opposite surfaces of said substrate.

12. The light emitting diode of claim 11 wherein said reflector is a multilayer film of either semiconductor or a dielectric.

13. A light emitting diode comprising:

a light emitting layer of a composition adapted to generate and radiate light, the optical output of which drops in response to a rise in operating temperature and a light emission spectrum which moves toward a shorter wavelength side;

a reflector located at a position with respect to the light emitting layer to reflect light radiated from said light emitting layer and of a composition having a wavelength dependent reflectivity which becomes larger in a wavelength shorter than the peak wavelength of the light emission spectrum of said light emitting layer; and

a window portion allowing the passing to the exterior of said diode direct light from said light emitting layer and light radiated from said light emitting layer and then reflected by said reflector.

14. The light emitting diode of claim 13 further comprising a substrate having a pair of opposed surfaces and said light emitting layer and said reflector are on said substrate.

15. The light emitting diode of claim 14 in which the light emitting layer and said reflector are on the same surface of said substrate.

16. The light emitting diode of claim 15 wherein said reflector is a multilayer film of either a semiconductor or a dielectric.

17. The light emitting diode of claim 14 in which said light emitting diode and said reflector are on opposite sides of said substrate.

18. The light emitting diode of claim 17 wherein said reflector is a multilayer film of either a semiconductor or a dielectric.

20. The light emitting diode of claim 16 further comprising a substrate having a pair of opposed surfaces and said light emitting layer and said reflector are on said substrate.

21. The light emitting diode of claim 20 wherein the light emitting layer and the reflector are on the same surface of said substrate.

22. The light emitting diode of claim 21 wherein the reflector is of a multilayer film of either a semiconductor or a dielectric.

23. The light emitting diode of claim 20 wherein said light emitting diode and said reflector are on opposite surfaces of said substrate.

24. The light emitting diode of claim 23 wherein said reflector is a multilayer film of either a semiconductor or a dielectric.

19. A light emitting diode comprising:

a light emitting layer of a composition adapted to generate and radiate light, the optical output of which increases in response to a rise in operating temperature and a light emission spectrum which moves toward a longer wavelength side;

a reflector located at a position with respect to the light emitting layer to reflect light radiated from said light emitting layer and of a composition having a wavelength dependent reflectivity which becomes larger in a wavelength shorter than the peak wavelength of the light emission spectrum of said light emitting layer; and

a window portion allowing to pass to the exterior of said diode direct light from said light emitting layer and light radiated from said light emitting layer and then reflected by said reflector.

25. A light emitting diode comprising:

a light emitting layer of a composition which is adapted to generate and radiate light, the optical output of which increases with a rise in operating temperature and a light emission spectrum which moves toward a shorter wavelength side;

a reflector located at a position with respect to the light emitting layer to reflect light radiated from said light emitting layer and of a composition having a wavelength dependent reflectivity which becomes higher in a wavelength longer than the peak wavelength of the light emission spectrum of said light emitting layer; and

a window portion allowing the passing to the exterior of said diode direct light from said light emitting layer and light radiated from said light emitting layer and then reflected by said reflector.

26. The light emitting diode of claim 25 further comprising a substrate having a pair of opposed surfaces and the light emitting layer and the reflector are on said substrate.

27. The light emitting diode of claim 26 wherein said light emitting layer and said reflector are on the same surface of said substrate.

28. The light emitting diode of claim 27 wherein the reflector is of a multilayer film of either a semiconductor or a dielectric.

29. The light emitting diode of claim 26 wherein said light emitting diode and said reflector are on opposite surfaces of said substrate.

30. The light emitting diode of claim 29 wherein said reflector is a multilayer film of either a semiconductor or a dielectric.