Method for measuring the electrical and optical performance of on-wafer microwave devices

• US 5,159,262 A
• Filed: 07/09/1991
• Issued: 10/27/1992
• Est. Priority Date: 07/09/1991
• Status: Expired due to Term

• Current Assignee: Cascade Microtech Incorporated (FormFactor Incorporated)
• Original Assignee: Cascade Microtech Incorporated (FormFactor Incorporated)
• Inventors: Davidson, Andrew C., Rumbaugh, Scott H.
• Primary Examiner(s): NGUYEN, VINH P
• Application Number:
  US07/727,566
• Time in Patent Office: 476 Days
• Field of Search: 324/158 R, 324/158 D, 324/158 T, 324/73.1, 324/77 A, 324/77 K, 324/642, 250/310, 250/311, 364/571.01
• US Class Current: 324/754.03
• CPC Class Codes: G01R 31/275 for testing individual semiconductor components within integrated circuits

Abstract

A method for on-wafer testing of microwave devices, such as photodiodes, including a biasing method applicable when the device has a lower end connected to the ground plane of the wafer. Elements having a diode-like characteristic, such as photodiodes, are arranged side-by-side with the device, each preferably being of like geometry with the device, and each having an end connected to the ground plane. A first voltage is applied between the ground conductors of the probe and the ground plane of the wafer to place each element in forward-biased condition thereby creating a return path for the lower end of the device to the ground conductors located on the upper side of the wafer. The method further includes a calibration method for accurate measurements of photodetectors particularly when they are biased as described above, including measuring a performance parameter, such as responsivity, that characterizes the optical performance of the photodetector, measuring a network parameter, such as a reflection coefficient, that characterizes the electrical performance of the photodetector, and determining an adjusted value for the performance parameter based on the network parameter in which the reference plane of the measured performance parameter has been shifted so as to better characterize the intrinsic response of the photodetector without interference by the surrounding measurement environment. Specific steps for removing probe effects and return path diode effects are described.

Claims

1. A method for on-wafer testing of microwave devices comprising:

(a) providing a wafer of the type having a lower side with a ground plane and an opposing upper side and having a microwave device connected between a first probeable contact on the upper side of said wafer and said ground plane on the lower side thereof;

(b) providing a diode arranged side-by-side with said microwave device and connected between a second probeable contact on the upper side of said wafer and said ground plane on the lower side thereof, said first and second probeable contacts having a predetermined side-b-side spacing therebetween;

(c) providing a microwave probe having a signal conductor in coplanar relation with a ground conductor, said signal conductor and ground conductor having a side-by-side spacing corresponding to said predetermined side-by-side spacing between said first and second probeable contacts;

(d) placing the diode in a forward biased condition by applying a first voltage between said ground conductor and the ground plane of the wafer; and

(e) during step (d), measuring via said signal conductor and said ground conductor a performance parameter characterizing said microwave device.

2. The method of claim 1, wherein said microwave device is a photodetector and the method further includes the step of placing said photodetector in a reverse-biased condition by applying a second voltage between said signal conductor and the ground plane of the wafer.

3. The method of claim 2 wherein the method further includes the step of placing said photodetector in a forward-biased condition by applying a third voltage between said signal conductor and the ground plane of the wafer.

4. The method of claim 3 wherein said diode is substantially identical in physical geometry to said photodetector.

5. The method of claim 1 wherein said performance parameter measured in step (e) characterizes said microwave device from a first reference plane including the microwave device in combination with the diode.

6. The method of claim 5, further including the step of determining an adjusted value for said performance parameter characterizing said microwave device from a second reference plane including said microwave device apart from the diode.

7. The method of claim 5, wherein said microwave device is a photodetector and the method further includes the step of providing light emitting means for selectively applying an optical signal to said photodetector, said performance parameter characterizing the response of said photodetector to said optical signal.

8. The method of claim 7, further including the step of determining an adjusted value for said performance parameter, said adjusted value characterizing the response of said photodetector to said optical signal from a second reference plane including said photodetector apart from the diode.

9. The method of claim 8 wherein said microwave probe includes means for applying an electrical signal to said photodetector and further including the step of measuring via said signal conductor and said ground conductor a network parameter characterizing the response of said photodetector to said electrical signal.

10. The method of claim 8 wherein the step of determining said adjusted value includes determining an intrinsic network parameter characterizing the electrical response of said photodetector apart from the diode.

11. The method of claim 10 wherein said intrinsic network parameter is a reflection coefficient.

12. The method of claim 10 wherein the step of determining said intrinsic network parameter includes measuring an aggregate network parameter characterizing the electrical response of said photodetector in reversedbiased condition from a reference plane including said photodetector and the diode.

13. The method of claim 10 wherein the step of determining said intrinsic network parameter includes determining a set of network parameters characterizing the electrical response of the diode apart from said photodetector.

14. The method of claim 13 wherein the step of determining said set of network parameters includes measuring a unified parameter characterizing the electrical response of said photodetector in a forwardbiased condition from a reference plane including said photodetector and the diode.

15. The method of claim 8 wherein the step of determining said adjusted value includes determining a first set of network parameters characterizing the electrical response of the microwave probe itself.

16. The method of claim 8 wherein the step of determining said adjusted value includes determining a second set of network parameters characterizing the electrical response of the diode apart from said photodetector.

17. The method of claim 8 wherein the step of determining said adjusted value includes determining a third set of network parameters characterizing the electrical response of the microwave probe and the diode together with each other and apart from said photodetector.

18. A method for on-wafer testing of microwave photodetectors comprising:

(a) providing a wafer supporting a photodetector thereon,

(b) providing light emitting means for selectively applying an optical signal to said photodetector;

(c) providing a microwave probe for measuring said photodetector and for applying an electrical signal to said photodetector;

(d) probing said photodetector with the microwave probe including measuring a performance parameter characterizing the response of said photodetector to said optical signal from a first reference plane;

(e) probing said photodetector with the microwave probe including measuring a network parameter characterizing the response of said photodetector to said electrical signal; and

(f) determining an adjusted value for said performance parameter based on said network parameter so that the response of said photodetector to said optical signal is characterized from a second reference plane nearer to said photodetector than said first reference plane.

19. The method of claim 18, further including the step of providing a cable having a measurement port adapted for connection to said microwave probe.

20. The method of claim 19 wherein step (d) characterizes the response of said photodetector to said optical signal from a first reference plane aligned with said measurement port.

21. The method of claim 20, further including the step of separately measuring a first set of network parameters characterizing the microwave probe itself.

22. The method of claim 18 wherein said network parameter is a reflection coefficient.

23. The method of claim 18 wherein said performance parameter is the responsivity of said photodetector.

24. The method of claim 18 adapted for testing said photodetector when the wafer has an upper and lower side, wherein said photodetector is connected between the upper and lower side, and the microwave probe has a tip including a signal conductor and a ground conductor in coplanar relationship to each other, wherein steps (d) and (e) of the method include the step of simultaneously probing said photodetector with said signal conductor and said ground conductor.