Semiconductor integrated circuit having function of preventing rise of surface temperature

• US 5,159,520 A
• Filed: 08/01/1991
• Issued: 10/27/1992
• Est. Priority Date: 08/03/1990
• Status: Expired due to Term

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Shibata, Yoshiki, Toyooka, Tamotsu
• Primary Examiner(s): Pellinen, A. D.
• Assistant Examiner(s): SCHULTZ, CHRISTOPHER
• Application Number:
  US07/738,873
• Time in Patent Office: 453 Days
• Field of Search: 357/23.13, 357/41, 357/40, 357/28, 361/103, 361/86, 361/78, 361/104, 361/55, 307/310, 307/296.6
• US Class Current: 361/103
• CPC Class Codes: H02H 5/044 using a semiconductor device to sense the temperature

Abstract

A semiconductor integrated circuit includes a semiconductor chip having a predetermined circuit device and a PN junction diode group formed on the surface thereof. The PN junction diode group is supplied with a constant current in the forward direction, whereby the potential difference between the terminals thereof changes according to the surface temperature of the semiconductor chip. A potential difference generating circuit generates a fixed potential difference corresponding to a predetermined limit temperature of the chip surface, whereby the potential difference between the terminals of the PN junction diode group is compared with the fixed potential difference. As a result, when the determination in made that the temperature of the semiconductor chip surface reaches the limit temperature, the operation of the circuit device is temporarily or completely halted.

Claims

1. A semiconductor integrated circuit comprising:

a semiconductor chip having a predetermined circuit device formed on the surface thereof,

rectifying means having a PN junction, provided on said semiconductor chip,

constant current source means for supplying a constant current to said rectifying means in the forward direction,

potential difference generating means for generating a potential difference corresponding to a known potential difference between both sides of said rectifying means at a predetermined limit temperature of said semiconductor chip surface,

comparing means for comparing said potential difference between both sides of said rectifying means with said potential difference generated by said potential difference generating means to generate a signal indicating the comparison result, and

operation halting means responsive to the output signal of said comparing means for halting the operation of said circuit device when determination is made that the temperature of said semiconductor chip surface has risen to reach said limit temperature, said operation halting means comprising temporary halting means responsive to the output signal of said comparing means for halting temporarily the operation of said circuit device until the temperature of said semiconductor chip surface becomes lower than said limit temperature, said temporary halting means comprising input buffer means connected between said circuit device and input terminals of said circuit device and output buffer means connected between said circuit device and output terminals of said circuit device, respectively, to be temporarily disabled in response to the output signal of said comparing means.

2. A semiconductor integrated circuit comprising:

a semiconductor chip having a predetermined circuit device formed on the surface thereof,

rectifying means having a PN junction, provided on said semiconductor chip,

constant current source means for supplying a constant current to said rectifying means in the forward direction,

potential difference generating means for generating a potential difference corresponding to a known potential difference between both sides of said rectifying means at a predetermined limit temperature of said semiconductor chip surface,

comparing means for comparing said potential difference between both sides of said rectifying means with said potential difference generated by said potential difference generating means to generate a signal indicating the comparison result,

operation halting means responsive to the output signal of said comparing means for halting the operation of said circuit device when determination is made that the temperature of said semiconductor chip surface has risen to reach said limit temperature, said operation halting means including means for permanently disabling the operation of said circuit device, irrespective of the temperature of said semiconductor chip surface, after the temperature of said semiconductor chip surface once reaches said limit temperature, said disabling means comprising means for supplying power to said circuit device, and switching means responsive to the output signal of said comparing means for disconnecting said power supplying means from said circuit device,

said power supplying means comprising

a first metal interconnection for connecting said circuit device to an external ground potential, and

a second metal interconnection for connecting said circuit device to an external power supply potential, and

said switching means comprising

a semiconductor switching element connected between said first and second metal interconnections, responsive to the output signal of said comparing means for providing a short-circuit between said first metal interconnection and said second metal interconnection.