Titanium-tungsten target material for sputtering and manufacturing method therefor

• US 5,160,534 A
• Filed: 05/31/1991
• Issued: 11/03/1992
• Est. Priority Date: 06/15/1990
• Status: Expired due to Term

• Current Assignee: Hitachi Metals (Thailand) Ltd.
• Original Assignee: Hitachi Metals (Thailand) Ltd.
• Inventors: Hiraki, Akitoshi
• Primary Examiner(s): Lechert, Jr., Stephen J.
• Application Number:
  US07/708,340
• Time in Patent Office: 522 Days
• Field of Search: 75/248, 419/23, 419/29, 419/32, 419/33, 419/38, 419/49, 419/53, 419/54, 148/11.5 P, 148/126.1
• US Class Current: 75/248
• CPC Class Codes: C23C 14/3414 Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
• CPC Class Codes: H01J 37/3429 Plural materials

Abstract

Ti-W target material for sputtering includes a structure composed of a W phase, a Ti phase, and a Ti-W alloy phase of which 20% or more consist of the area ratio of a micro structure covering the cross section of the Ti-W target material. The Wi-W target material further includes dispersed tungsten particles, the Ti-W alloy phases substantially surrounding the W grains, and the Ti phases dispersed adjacent to the Ti-W alloy phase or the W grains. The formation of the Ti-W alloy phases is capable of reducing a substantial amount of the Ti phase in the target material. It is thus possible to prevent the generation of particles attributable to a difference between sputtering speeds of Ti and Ti-W.

Claims

1. A titanium-tungsten target material for a sputtering process with a structure consisting essentially of a tungsten phase, a titanium phase and a titanium-tungsten alloy phase, the titanium-tungsten alloy phase occupying an area ratio of 20% or more of a cross section of the structure of the titanium-tungsten target material.

2. A titanium-tungsten target material for a sputtering process according to claim 1, with a structure consisting essentially of dispersed tungsten grains, titanium-tungsten alloy phases substantially surrounding the tungsten grains and titanium phases dispersed adjacent to at least one of the titanium-tungsten alloy phases and the tungsten grains.

3. A titanium-tungsten target material for sputtering according to claims 1 or 2, wherein the average diameter of crystal grains of said structure is not more than 10 μ

m.

4. A titanium-tungsten target material for sputtering according to claims 1, 2 or 3, wherein the area ratio of the titanium phase covering the cross section of the target material is not more than 10%.

5. A titanium-tungsten target material for sputtering according to claims 1, 2 or 3, wherein the area ratio of the titanium-tungsten phase covering the cross section of the target material is not less than 60%.

6. A titanium-tungsten target material for sputtering according to claims 1, 2, 3, 4 or 5, wherein oxygen content is not more than 600 ppm.

7. A manufacturing method for a titanium-tungsten target material for sputtering comprising the steps of:

sintering under pressure tungsten powder and titanium powder so as to form a sintered body; and

heat treating the obtained sintered body so as to form titanium-tungsten alloy phases.

9. A manufacturing method for a titanium-tungsten target material for sputtering according to claims 7 or 8, wherein the heat-treatment is performed at a temperature ranging from 1300°

to 1500°

C.

8. A manufacturing method for a titanium-tungsten target material for sputtering comprising the steps of:

blending and pulverizing tungsten powder and hydrogenated titanium powder;

sintering under pressure the tungsten powder and the hydrogenated titanium powder after or while they are dehydrogenated so as to form a sintered body; and

heat-treating the obtained sintered body so as to form titanium-tungsten alloy phases.

10. A manufacturing method for a titanium-tungsten target material for sputtering according to claim 8, wherein the blending and pulverizing are effected mechanically at the same time.

11. A manufacturing method for a titanium-tungsten target material for sputtering according to claims 7, 8, 9 or 10, wherein a hot isostatic press is used for sintering under pressure.