Light-emitting diode array with projections

• US 5,162,878 A
• Filed: 12/12/1991
• Issued: 11/10/1992
• Est. Priority Date: 02/20/1991
• Status: Expired due to Term

• Current Assignee: Eastman Kodak Company
• Original Assignee: Eastman Kodak Company
• Inventors: Shibata, Naoki, Sasagawa, Teruo, Ohta, Hirokazu, Kazuno, Tadao
• Primary Examiner(s): Mintel, William
• Application Number:
  US07/085,764
• Time in Patent Office: 334 Days
• Field of Search: 357/17, 357/45, 357/4, 357/16, 357/56, 357/52, 357/52 T, 357/55, 372/45, 372/46, 372/50, 372/48, 346/107 R, 346/160, 346/1.1, 313/500, 362/800
• US Class Current: 257/88
• CPC Class Codes: H01L 33/00 Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof H10K50/00 takes precedence; devices consisting of a plurality of semiconductor components formed in or on a common substrate and including semiconductor components having potential barriers, specially adapted for light emission H01L27/15; semiconductor lasers H01S5/00
• CPC Class Codes: Y10S 362/80 Light emitting diode

Abstract

A light-emitting diode array having improved optical output efficiency and uniformity without loss of reliability or reproducibility is described. The array is formed of an n-type conductivity GaAs buffer layer on an n-type conductivity GaAs substrate, followed by 25-pair n-type conductivity Al_y Ga_1-y As/AlAs semiconductor multilayer mirror, a p-type conductivity Al_x Ga_1-x As active layer, and a p++ type conductivity GaAs contact layer. The surface of the emission region is a total reflection prevention surface with a sawtooth-shaped projection configuration. This provides a large decrease in total reflection loss of light from the emission layer, and also enables light propagating in the opposite direction to the output surface to be efficiently outputed.

Claims

1. A light-emitting diode array comprising:

a multiplicity of light-emitting diodes arrayed on a single substrate, each light-emitting diode having an active layer which emits light when subjected to carrier injection, and an optical output surface;

projections on said optical output surface for reflection prevention so as to limit reflection of light from the active layer; and

a reflective mirror between the substrate and the active layer.

2. The light-emitting diode array of claim 1 in which the projection have a pitch which is between less than a micron to several microns.

3. The light-emitting diode array of claim 2 in which the projections have an inclination which is about 45°

.

4. The light-emitting diode array of claim 1 in which the reflective mirror comprises a multiplicity of alternating semiconductor layers having different reflective indices.

5. A light-emitting diode array comprising:

a substrate of one conductivity type having a surface;

spaced light-emitting elements on said surface of the substrate;

each of said light-emitting elements comprises an active layer of a conductivity type opposite that of the substrate and a light emitting surface;

a mirror between each of the active layers and the substrate; and

projections on the light-emitting surface of each of the light-emitting elements to prevent reflection of the light.

6. The light-emitting diode array of claim 5 in which each of the light-emitting elements is in the form of a mesa on the substrate.

7. The light-emitting diode array of claim 6 further comprising a buffer layer of the same conductivity type as the substrate between the substrate and the mirror.

8. The light-emitting diode array of claim 7 in which the active layer provides the light-emitting surface of each light-emitting element and the reflection prevention projections are in the surface of the active layer.

9. The light-emitting diode array of claim 7 further comprising a cladding layer of the same conductivity type as the active layer over the active layer and providing the light-emitting surface of each light-emitting element, and wherein the reflection prevention projections are in the surface of the active cladding layer.

10. The light-emitting diode array of claim 7 in which the mirror comprises a multiplicity of alternating semiconductor layers having different refractive indices.

11. The light-emitting diode array of claim 10 in which the mirror comprises alternating layers of AlGaAs and AlAs.

12. The light-emitting diode array of claim 11 in which there are 25 pairs of the alternating layers of the mirror.

13. The light-emitting diode array of claim 12 in which the substrate and buffer layer are of GaAs and the active layer is of AlGaAs.

14. The light-emitting diode array of claim 13 in which the substrate, buffer layer and mirror are of n-type conductivity and the active layer is of p-type conductivity.

15. The light-emitting diode array of claim 7 further comprising a separate contact on the light emitting surface of leach of the light-emitting elements and a contact on the surface of the substrate opposite the active layer.

16. The light-emitting diode array of claim 5 further comprising an emission layer of the same conductivity type as the substrate over the mirror, and wherein the active layers are spaced regions of the opposite conductivity type in the emission layer, and each of the active layers has a light emitting surface.

17. The light-emitting diode array of claim 16 further comprising a buffer layer of the same conductivity type as the substrate between the substrate and the mirror.

18. The light-emitting diode array of claim 17 in which the mirror comprises a multiplicity of alternating semiconductor layers having different refractive indices.

19. The light-emitting diode array of claim 18 in which the mirror comprises alternating layers of AlGaAs and AlAs.

20. The light-emitting diode array of claim 19 in which there are 25 pairs of the alternating layers of the mirror.

21. The light-emitting diode array of claim 20 in which the substrate and buffer layer are of GaAs and the emission layer and active regions are of AlGaAs.

22. The light-emitting diode array of claim 21 in which the substrate, buffer layer and mirror are of n-type conductivity and the emission layer and active regions are of p-type conductivity.

23. The light-emitting diode array of claim 22 further comprising a separate contact on each of the active regions and a contact on the surface of the substrate opposite the buffer layer.