Diffusionless conductor/oxide semiconductor field effect transistor and methods for making and using the same

• US 5,162,879 A
• Filed: 11/01/1991
• Issued: 11/10/1992
• Est. Priority Date: 04/06/1990
• Status: Expired due to Term

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Gill, Manzur
• Primary Examiner(s): WOJCIECHOWICZ, EDWARD JOSEPH
• Application Number:
  US07/786,651
• Time in Patent Office: 375 Days
• Field of Search: 357/24, 357/23.11, 357/23.1, 357/41, 357/45
• US Class Current: 257/391
• CPC Class Codes: H01L 29/0847 of field-effect transistors with insulated gate H01L29/0653 takes precedence; with a passive supplementary region between source or drain and substrate related to punch-through, capacity or isolation phenomena H01L29/1079; with LDD or DDD structure H01L29/7833; for thin film transistors H01L29/78618
• CPC Class Codes: H01L 29/66643 with source or drain regions formed by a Schottky barrier or a conductor-insulator-semiconductor structure
• CPC Class Codes: H01L 29/78 with field effect produced by an insulated gate H01L29/7725, H01L29/775, H01L29/778 take precedence
• CPC Class Codes: H01L 29/7831 with multiple gate structure FinFETs or MuGFETs H01L29/7855, thin film transistors H01L29/78645

Abstract

A diffusionless field effect transistor is formed at a face of a semiconductor layer (12) of a first conductivity type and includes a source conductor (36), a drain conductor (38) and a channel region (44). Source conductor (36) and drain conductor (38) are disposed to create inversion regions, and a second conductivity type opposite said first conductivity type, in the underlying source inversion region (40) and drain inversion region (42) of semiconductor layer (12) upon application of voltage. The transistor has a gate (54) insulatively overlying the channel region (44) to control the conductivity thereof.

Claims

1. A source/drain diffusionless field effect transistor formed at the face of a semiconductor layer of a first conductivity type, comprising:

a thin insulator layer overlying said semiconductor layer;

a source conductor formed on said thin insulator layer overlie a source inversion region of said semiconductor layer;

a drain conductor formed on said thin insulator layer to overlie a drain inversion region of said semiconductor layer and spaced from said first conductor, a channel region of said semiconductor layer defined between said source inversion region and said drain inversion region and further bounded by thick field oxide regions;

a control gate conductor overlying said channel region; and

at least one voltage source coupled to said drain conductor and said source conductor for inverting said source and drain inversion regions to a second conductivity type opposite said first conductivity type.

2. The transistor of claim 1, wherein the conductivity of said channel region is adjusted by an ion implant.

3. The transistor of claim 2, wherein said semiconductor layer comprises a P-type material and the conductivity of said channel region is enhanced with a phosphorus implant.

4. The diffusionless field effect transistor of claim 2, wherein said layer of semiconductor comprises a P-type material and the conductivity of said channel region is reduced with a boron implant.

5. The transistor of claim 1, and further comprising:

a first diffused region of a second conductivity type opposite said first conductivity type formed in the face of said semiconductor layer, said first diffused region formed adjacent said source inversion region;

a second diffused region of a second conductivity type opposite said first conductivity type formed in the face of said semiconductor layer, said second diffused region formed adjacent said drain inversion region;

a source conductor line terminating in said first diffused region and coupled to said at least one voltage source; and

a drain conductor line terminating in said second diffused region and coupled to said at least one voltage source.

6. The transistor of claim 1, wherein the conductivity of said channel region is adjusted by varying the thickness of said thin insulator layer.

12. The transistor of claim 1, including a channel stop region beneath each of said thick field oxide areas.

13. The transistor of claim 12, wherein said channel stop region includes a boron implant.

14. The transistor of claim 13, wherein said boron is implanted at a dose of about 8×

10¹² cm^-2.

15. The transistor of claim 1, wherein sidewalls of said thick field oxide areas slope into said thin insulator layer in the form of a bird'"'"'s beak.

7. An array of diffusionless field-effect transistors formed at a face of a semiconductor layer of a first conductivity type, comprising:

a thin insulator layer overlying said layer of semiconductor;

a plurality of parallel, elongated drain conductors formed overlying said thin insulator layer;

for each pair of drain conductors, an elongated source conductor formed in between and substantially parallel thereto, each source conductor spaced from adjacent ones of said drain conductors by a plurality of channel regions, said channel regions having thick field oxide areas formed between channel regions of adjacent transistors; and

a plurality of elongated gate conductors formed at an angle to insulatively intersect said source conductors and said drain conductors, said gate conductors insulatively disposed adjacent said channel regions, field effect transistors formed at least some intersections of said gate conductors with said source conductors, drain conductors and channel regions.

8. The array of claim 7, and further comprising:

remote regions of said source conductors and said drain conductors disposed remotely from said channel regions, a plurality of diffused regions of a second conductivity type opposite said first conductivity type, disposed adjacent said remote regions; and

a plurality of elongated metal contacts insulatively adjacent said source conductors and said drain contacting said diffused regions, at least one voltage source coupled to said contacts for inverting source and drain inversion regions from said first conductivity type to a second conductivity type opposite said first conductivity type.

9. An array of memory cells comprising source/drain diffisionless field effect transistors formed at a face of a semiconductor layer of a first conductivity type, comprising:

a plurality of parallel, elongated drain conductors formed at said face;

for each pair of drain conductors, an elongated source conductor formed in between and in parallel thereto, said source conductors and said drain conductors spaced by a plurality of channel regions, to form memory cells with a cell associated with each channel region;

a plurality of rows of said cells formed at an angle to said source conductors and said drain conductors, a control gate conductor for each said row insulatively disposed adjacent said channel regions in said row and insulated from said source and drain conductors, so as to control the conductance of said channel regions; and

a plurality of thick field oxide areas formed in the channel regions between adjacent ones of said rows to electrically isolate cells.

10. The array of claim 9, wherein the conductivity of preselected ones of said channel regions is reduced to form memory cells representing logical "0'"'"'s."

11. The array of claim 9, wherein the conductivity of preselected ones of said channel regions is enhanced to form memory cells representing logical "1'"'"'s."

16. The transistor of claim 9, including a channel stop region beneath each of said thick field oxide areas.

17. The transistor of claim 16, wherein said channel stop region includes a boron implant.

18. The transistor of claim 17, wherein said boron is implanted at a dose of about 8×

10¹² cm^-2.

19. The transistor of claim 18, wherein sidewalls of said thick field oxide areas slope into said thin insulator layer in the form of a bird'"'"'s beak.