Multiple chemically modulated capacitance determination

• US 5,164,319 A
• Filed: 11/17/1989
• Issued: 11/17/1992
• Est. Priority Date: 08/22/1985
• Status: Expired due to Term

• Current Assignee: Molecular Devices
• Original Assignee: Molecular Devices
• Inventors: Hafeman, Dean G., McConnell, Harden M.
• Primary Examiner(s): Jones, Larry
• Application Number:
  US07/438,675
• Time in Patent Office: 1,096 Days
• Field of Search: 435/291, 435/287, 204/403, 204/195 R
• US Class Current: 435/287.1
• CPC Class Codes: G01N 27/227 Sensors changing capacitance upon adsorption or absorption of fluid components, e.g. electrolyte-insulator-semiconductor sensors, MOS capacitors G01N27/225 takes precedence
• CPC Class Codes: G01N 33/5438 Electrodes

Abstract

Apparatus and methods are provided for multiple detection of analytes employing semiconductor capacitance as the signal modulated by the analyte. A plurality of semiconductor capacitors are organized for detection (at individual sites) of changes in capacitance which are related to changes in a fluid medium, where the change can be related to the presence of an analyte. Circuitry is designed to substantially maximize sensitivity.

Claims

1. An apparatus for making a plurality of determinations at different sites, of an electrically conductive substance capable of modifying the capacitance of a semiconductor, comprising:

a semiconductor;

an insulating layer, having a substantially constant predetermined capacitance and being substantially inert to said substance, said insulating layer overlaying one surface of said semiconductor at a plurality of sites;

means for retaining said electrically conductive substance in communication with at least one of said plurality of sites;

a counter electrode electrically coupled to said electrically conductive substance;

means for measuring the capacitance across said semiconductor and said insulating layer at each of said sites;

means for isolating the capacitance at each site from the capacitance at each of the other sites, wherein said means for isolating comprises a plurality of counter electrode plates, each of said plates being proximate one of said sites;

means adapted for providing high electrical impedance between said plates; and

switching means for sequentially coupling each of said plates to said capacitance measuring means.

2. The apparatus of claim 1, wherein said means adapted for providing high electrical impedance comprises at least one shallow and/or thin channel separating said plates such that said media is spread in small cross-section to reduce conductance from plate to plate.

3. The apparatus of claim 1, wherein said means adapted for providing high electrical impedance comprises container means for holding electrically conductive substance having some resistance in contact with said plates so as to provide a smaller resistance between each of the counter electrode plates and the insulative layer of the semiconductor electrode compared to the resistance between individual counter electrode plates.

4. An apparatus for making a plurality of determinations at different sites, of an electrically conductive substance capable of modifying the capacitance of a semiconductor, comprising:

a semiconductor;

an insulating layer, having a substantially constant predetermined capacitance and being substantially inert to said substance, said insulating layer overlaying one surface of said semiconductor at a plurality of sites;

means for retaining said electrically conductive substance in communication with at least one of said plurality of sites;

a counter electrode electrically coupled to said electrically conductive substance;

means for measuring the capacitance across said semiconductor and said insulating layer at each of said sites;

means for isolating the capacitance at each site from the capacitance at each of the other sites, wherein said means for isolating the capacitance at each site comprises a doped portion of said semiconductor proximate one of said sites, wherein an area around said doped portion is eroded to isolate said portion from other doped portions, said further comprising a plurality of insulating regions, each insulating region being between one of said doped portions and said semiconductor;

means adapted for providing high electrical impedance between said plates; and

switching means for sequentially coupling each of said plates to said capacitance measuring means.

5. An apparatus for making a plurality of determinations at different sites, of an electrically conductive substance capable of modifying the capacitance of a semiconductor, comprising:

a semiconductor;

an insulating layer, having a substantially constant predetermined capacitance and being substantially inert to said substance, said insulating layer overlaying one surface of said semiconductor at a plurality of sites;

means for retaining said electrically conductive substance in communication with at least one of said plurality of sites;

a counter electrode electrically coupled to said electrically conductive substance;

means for measuring the capacitance across said semiconductor and said insulating layer at each of said sites;

means for isolating the capacitance at each site from the capacitance at each of the other sites;

means adapted for providing high electrical impedance between said plates;

switching means for sequentially coupling each of said plates to said capacitance measuring means; and

a reference electrode electrically coupled to said electrically conductive substance.

6. An apparatus for making a plurality of determinations at different sites, of an electrically conductive substance capable of modifying the capacitance of a semiconductor, comprising:

a semiconductor;

an insulating layer, having a substantially constant predetermined capacitance and being substantially inert to said substance, said insulating layer overlaying one surface of said semiconductor at a plurality of sites;

means for retaining said electrically conductive substance in communication with at least one of said plurality of sites;

a counter electrode electrically coupled to said electrically conductive substance;

means for measuring the capacitance across said semiconductor and said insulating layer at each of said sites, wherein said capacitance measuring means comprises;

means for providing an alternating voltage across said semiconductor and said counter electrode; and

means for measuring the alternating current responsive to said alternating voltage;

means for isolating the capacitance at each site from the capacitance at each of the other sites;

means adapted for providing high electrical impedance between said plates;

switching means for sequentially coupling each of said plates to said capacitance measuring means; and

means for applying a DC bias potential across said semiconductor and counter electrode.

7. The apparatus of claim 6, further comprising means for varying said DC bias potential in order to maintain said alternating current constant.

8. The apparatus of claim 7, wherein said means for varying comprises:

means for filtering said alternating current to produce a filtered signal;

means for rectifying said filtered signal to produce a rectified signal;

means for amplifying said rectified signal to provide a feedback signal; and

means, responsive to said feedback signal, for altering said DC bias potential.

9. An apparatus for making a plurality of determination at different sites, of an electrically conductive substance capable of modifying the capacitance of a semiconductor, comprising:

a monolithic semiconductor wafer;

a plurality of doped regions in said semiconductor wafer, each of said regions being proximate one of said sites;

an insulating layer, having a substantially constant predetermined capacitance and being substantially inert to said substance, said insulating layer overlaying said doped regions;

means for retaining said electrically conductive substance in communication with at least one of said sites;

a counter electrode positioned to contact said electrically conductive substance;

means for measuring the capacitance across said doped regions and said insulating layer, wherein said means for measuring comprises;

means for providing an alternating voltage across said semiconductor and said counter electrode; and

means for measuring the alternating current responsive to said alternating voltage;

means for applying a DC bias potential across said doped regions and said counter electrode;

means for filtering said alternating current;

means for reifying said alternating current;

means for amplifying said filtered, rectified alternating current to provide a feedback signal; and

means, responsive to said feedback signal, for varying said DC bias potential to maintain said alternating current constant.

10. The apparatus of claim 9, further comprising reference electrode means electrically coupled to said electrically conductive substance for measuring the DC bias potential applied across said electrically conductive substance and said doped regions.