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Fabrication of oxynitride frontside microstructures

  • US 5,164,339 A
  • Filed: 05/28/1991
  • Issued: 11/17/1992
  • Est. Priority Date: 09/30/1988
  • Status: Expired due to Fees
First Claim
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1. A method for producing a low stress free-standing microstructure, said method comprising the steps of:

  • providing a silicon substrate;

    forming a spacer layer on said silicon substrate;

    etching a pattern in said spacer layer to produce an etched spacer layer;

    forming a silicon oxynitride layer on said etched spacer layer; and

    etching said spacer layer to remove said spacer layer without removing portions of said oxynitride layer formed on said spacer layer to form said low stress free-standing oxynitride microstructure on said substrate.

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