RF amplifier assembly

• US 5,164,683 A
• Filed: 10/21/1991
• Issued: 11/17/1992
• Est. Priority Date: 10/21/1991
• Status: Expired due to Term

• Current Assignee: Freescale Semiconductor, Inc. (NXP Semiconductors NV)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Shields, Michael R.
• Primary Examiner(s): MOTTOLA, STEVEN J
• Application Number:
  US07/779,780
• Time in Patent Office: 393 Days
• Field of Search: 330/65, 330/66, 330/67, 330/68, 330/277, 330/302, 330/307, 330/286, 330/287
• US Class Current: 330/307
• CPC Class Codes: H01L 2223/6644 Packaging aspects of high-frequency amplifiers amplifiers per se H03F
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48237 connecting the wire to a die pad of the item
• CPC Class Codes: H01L 2224/49113 the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 23/642 Capacitive arrangements H01L23/49589, H01L23/645, H01L23/647, H01L23/66 take precedence; capacitive effects between wiring layers on the semiconductor body H01L23/5222
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01014 Silicon [Si]
• CPC Class Codes: H01L 2924/01031 Gallium [Ga]
• CPC Class Codes: H01L 2924/10329 Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/1306 Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13063 Metal-Semiconductor Field-Effect Transistor [MESFET]
• CPC Class Codes: H01L 2924/19041 being a capacitor
• CPC Class Codes: H01L 2924/19042 : being an inductor
• CPC Class Codes: H01L 2924/19107 : off-chip wires
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H03F 3/191 : Tuned amplifiers H03F3/193, H03F3/195 take precedence

Abstract

A series resonant circuit (17, 16, 22, 21, 19) is employed to minimize the area utilized to form an RF amplifier (10). The series resonant circuit (17, 16, 22, 21, 19) utilizes a capacitor (21) along with inductors (17, 19, 22) that are formed by bonding wires (17, 19, 22) which interconnect the components of the amplifier (10). The series resonant circuit is tuned to the second harmonic of the fundamental frequency applied to the RF amplifier (10). The area consumed by the series resonant circuit (17, 16, 22, 21, 19) is small thereby minimizing the amplifier'"'"'s size.

Claims

1. An RF amplifier assembly comprising:

a substrate having a radio frequency (RF) ground;

a semiconductor die having a surface attached to the RF ground, and also having a control electrode, a first current carrying electrode, and a second current carrying electrode;

a capacitor having a first surface mounted on the RF ground wherein the first surface of the capacitor electrically couples the capacitor to the RF ground;

a common node on the substrate;

a capacitor bonding wire having a first end connected to a second surface of the capacitor, and a second end connected to the common node;

a first bonding wire having a first end attached to the first current carrying electrode of the semiconductor die, and a second end attached to the RF ground wherein the first bonding wire forms an inductor having a predetermined inductance which inductively couples the RF ground to the first current carrying electrode of the semiconductor die; and

a plurality of second bonding wires which form an inductor having a predetermined inductance that inductively couples the second current carrying electrode of the semiconductor die to the common node by having a first end of the plurality of second bonding wires attached to the second current carrying electrode of the semiconductor die and a second end of the plurality of second bonding wires attached to the common node wherein the capacitor, the capacitor bonding wire, the first bonding wire, and the plurality of second bonding wires form a series resonant circuit that has a resonant frequency which is approximately twice a frequency that is applied to the control electrode of the semiconductor die.

2. The amplifier of claim 1 wherein the semiconductor die is a gallium arsenide metal semiconductor field effect transistor (MESFET) amplifier.

3. The amplifier of claim 1 wherein the capacitor is a metal oxide semiconductor (MOS) capacitor.

4. The amplifier of claim 3 wherein the MOS capacitor has a value of approximately 2.3 picofarads.

5. The amplifier of claim 1 wherein the capacitor bonding wire, the first bonding wire, and the plurality of second bonding wires have a total combined series inductance that is between approximately 3.7 and 4.0 nanohenrys.

6. A method of forming a small RF amplifier comprising:

providing a substrate having a semiconductor die attached to a portion of the substrate which forms a radio frequency (RF) ground, the substrate also having a common node;

coupling a first inductor in series between a first current carrying electrode of the semiconductor die and the common node;

coupling a second inductor in series with a capacitor wherein the second inductor and the capacitor are in series between the common node and the radio frequency (RF) ground; and

coupling a third inductor between a second current carrying electrode of the semiconductor die and the radio frequency (RF) ground wherein the capacitor, the first inductor, the second inductor, and the third inductor form a series resonant circuit having a resonant frequency approximately twice a frequency applied to a control electrode of the semiconductor die.

7. The method of claim 6 wherein coupling the first inductor in series between the first current carrying electrode of the semiconductor die and the common node includes forming a plurality of bonding wires for connecting the first current carrying electrode of the semiconductor die to the common node wherein the plurality of bonding wires form the first inductor.

8. The method of claim 7 wherein forming the plurality of bonding wires includes forming the plurality of bonding wires having a predetermined length and a predetermined height above the radio frequency (RF) ground for the purpose of forming a predetermined inductance.

9. The method of claim 6 wherein coupling the second inductor in series with the capacitor includes attaching a first surface of the capacitor that is a first terminal of the capacitor to the radio frequency (RF) ground, and attaching a bonding wire having a predetermined inductance between a second surface of the capacitor and the common node wherein the bonding wire forms the second inductor.

10. The method of claim 9 wherein having a predetermined inductance includes having an inductance of approximately 2.2 nanohenrys.

11. The method of claim 6 wherein coupling the third inductor between the second current carrying electrode of the semiconductor die and the radio frequency (RF) ground includes forming a bonding wire connecting the second current carrying electrode of the semiconductor die to the radio frequency (RF) ground wherein the bonding wire has a predetermined length and a predetermined height above the radio frequency (RF) ground for the purpose of forming a predetermined inductance.

12. The method of claim 11 wherein forming the predetermined inductance includes forming an inductance of approximately 0.3 nanohenrys.

13. The method of claim 6 wherein coupling the second inductor in series with the capacitor includes coupling the second inductor in series with a metal oxide semiconductor (MOS) capacitor.

14. A method of forming an RF amplifier comprising:

inductively coupling a first current carrying electrode of a semiconductor die to a common node by using a first predetermined inductance;

inductively coupling a first terminal of a capacitor to the common node by using a second predetermined inductance; and

inductively coupling a second terminal of the capacitor to a second current carrying electrode of the semiconductor die by using a third predetermined inductance.

15. The method of claim 14 wherein inductively coupling the first current carrying electrode of the semiconductor die to the common node includes coupling the first current carrying electrode of the semiconductor die to the common node by using a bonding wire having the first predetermined inductance.

16. The method of claim 14 wherein inductively coupling the first terminal of the capacitor to the common node includes connecting the first terminal of the capacitor to the common node by using a bonding wire having the second predetermined inductance.

17. The method of claim 14 wherein inductively coupling the first terminal of the capacitor to the common node includes inductively coupling the first terminal of an MOS capacitor to the common node.

18. The method of claim 14 wherein inductively coupling the first current carrying electrode of the semiconductor die includes inductively coupling the first current carrying electrode of the semiconductor die that is attached to an RF ground that is on a substrate.

19. The method of claim 14 wherein inductively coupling the second terminal of the capacitor to the second current carrying electrode of the semiconductor die by using the third predetermined inductance includes attaching a surface of the capacitor to an RF ground that is on a substrate, and coupling the third predetermined inductance from the RF ground to the second current carrying electrode of the semiconductor die.