Thin-film electroluminescent device having a dual dielectric structure
First Claim
1. A thin-film electroluminescent device having a dual dielectric structure, said device comprising a substrate having consecutively thereon a lower electrode, a first dielectric layer, a luminescent layer, a second dielectric layer and an upper electrode, a metal oxide film interposed between said luminescent layer and at least one of said first dielectric layer and said second dielectric layer, wherein said metal oxide film is a material selected from the group consisting of WOx and MoOx.
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Abstract
A thin-film electroluminescent device having a dual dielectric structure, said device comprising a substrate having consecutively thereon a lower electrode, a first dielectric layer, a luminescent layer, a second dielectric layer and an upper electrode, one of a metal oxide film, a metal nitride film and a metal film being interposed either (a) between said luminescent layer and said first dielectric layer or (b) between said luminescent layer and said second dielectric layer or (c) both between said luminescent layer and said first dielectric layer and between said luminescent layer and said second dielectric layer.
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Citations
17 Claims
- 1. A thin-film electroluminescent device having a dual dielectric structure, said device comprising a substrate having consecutively thereon a lower electrode, a first dielectric layer, a luminescent layer, a second dielectric layer and an upper electrode, a metal oxide film interposed between said luminescent layer and at least one of said first dielectric layer and said second dielectric layer, wherein said metal oxide film is a material selected from the group consisting of WOx and MoOx.
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5. A thin-film electroluminescent device having a dual dielectric structure, said device comprising a substrate having consecutively thereon a lower electrode, a first dielectric layer, a luminescent layer, a second dielectric layer and an upper electrode, a metal nitride film being interposed between said luminescent layer and at least one of said first dielectric layer and said second dielectric layer, wherein said metal nitride film has a thickness in the range of 10 to 100 Å
- and is a material selected from the group consisting of TiN and TaN.
- 6. A thin-film electroluminescent device having a dual dielectric structure, said device comprising a substrate having consecutively thereon a lower electrode, a first dielectric layer, a luminescent layer, a second dielectric layer and an upper electrode, a metal film being interposed between said luminescent layer and at least one of said first dielectric layer and said dielectric layer.
- 11. A Thin-film electroluminescent device having a dual dielectric structure, said device comprising a substrate having consecutively thereon a lower electrode, a first dielectric layer, a first thin film, a luminescent layer, a second thin film, a second dielectric layer and an upper electrode, wherein said first thin film and said second thin film are electrically isolated from each other, and both said first and second thin films comprise at least one composition selected from the group consisting of a metal oxide, a metal nitride and a metal.
Specification