Power VDMOSFET with schottky on lightly doped drain of lateral driver FET
First Claim
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1. A monolithic semiconductor device comprising:
- a substrate of a first conductivity type material, an upper region of said substrate having a lower impurity doping concentration than a lower portion thereof;
a first region of a second conductivity type material formed in said upper region of said substrate;
a second region of said first conductivity type material formed in said first region of said second conductivity type so as to leave an annular ring of said second conductivity material around said second region;
a third region of said second conductivity type material formed in said upper region of said substrate;
a fourth region of said first conductivity type material having a lower doping concentration than said second region, formed in said third region of said second conductivity type;
a fifth region of said first conductivity type material formed in said third region of said second conductivity type so as to leave an annular ring of second conductivity type material around said fourth region;
a layer of gate oxide overlying at least a portion of each of said annular rings;
metallic conductor means contacting at least a portion of said fourth region for forming a Schottky barrier diode therewith; and
a gate electrode overlying at least a portion of said gate oxide.
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Abstract
A monolithic semiconductor device comprises a VDMOS transistor having first and second main electrodes and a control electrode, and a lateral MOSFET having first and second main electrodes and a control electrode, wherein one of the first and second electrodes of the lateral MOSFET has a lower doping concentration than that of the first and second main electrodes of the VDMOS transistor for forming a Schottky barrier diode.
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Citations
2 Claims
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1. A monolithic semiconductor device comprising:
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a substrate of a first conductivity type material, an upper region of said substrate having a lower impurity doping concentration than a lower portion thereof; a first region of a second conductivity type material formed in said upper region of said substrate; a second region of said first conductivity type material formed in said first region of said second conductivity type so as to leave an annular ring of said second conductivity material around said second region; a third region of said second conductivity type material formed in said upper region of said substrate; a fourth region of said first conductivity type material having a lower doping concentration than said second region, formed in said third region of said second conductivity type; a fifth region of said first conductivity type material formed in said third region of said second conductivity type so as to leave an annular ring of second conductivity type material around said fourth region; a layer of gate oxide overlying at least a portion of each of said annular rings; metallic conductor means contacting at least a portion of said fourth region for forming a Schottky barrier diode therewith; and a gate electrode overlying at least a portion of said gate oxide. - View Dependent Claims (2)
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Specification
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Current AssigneeFairchild Semiconductor Corporation (ON Semiconductor Corporation)
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Original AssigneeHarris Corporation (L3Harris Technologies, Inc.)
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InventorsWrathall, Robert S., Jackoski, Claire E., Mansmann, Jeffrey G., Yedinak, Joseph A., Neilson, John M. S., Jones, Frederick P.
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Primary Examiner(s)LARKINS, WILLIAM
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Application NumberUS07/672,243Time in Patent Office608 DaysField of Search357/23.4, 357/15, 357/41US Class Current257/337CPC Class CodesH01L 29/7803 structurally associated wit...H01L 29/7806 the other device being a Sc...H01L 29/7839 with Schottky drain or sour...
