High temperature transducers and methods of fabricating the same employing silicon carbide

• US 5,165,283 A
• Filed: 05/02/1991
• Issued: 11/24/1992
• Est. Priority Date: 05/02/1991
• Status: Expired due to Term

• Current Assignee: Kulite Semiconductor Products Inc
• Original Assignee: Kulite Semiconductor Products Inc
• Inventors: Kurtz, Anthony D., Goldstein, David, Shor, Joseph S.
• Primary Examiner(s): WOODIEL, DONALD
• Application Number:
  US07/694,490
• Time in Patent Office: 572 Days
• Field of Search: 73/721, 73/727, 73/DIG. 4, 73/777, 73/708, 73/862.47, 73/862.48, 338/4, 338/42, 338/47, 29/621.1
• US Class Current: 73/727
• CPC Class Codes: G01L 9/0042 Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms details about the integration or bonding of piezoresistor in or on the diaphragm G01L9/0052 and G01L9/0057 respectively
• CPC Class Codes: G01L 9/0055 bonded on a diaphragm
• CPC Class Codes: Y10T 29/49103 Strain gauge making

Abstract

There is disclosed an apparatus and structure for a pressure transducer employing silicon carbide and utilizing p-type SiC as a diaphragm with n-type mesa SiC force sensing resistors integrally formed on the surface of the diaphragm. The p-type SiC diaphragm is positioned on top of an annular ring of silicon which is formed from a silicon wafer utilized as the supporting wafer for the process. The structure depicted is a given conductivity SiC diaphragm having opposite conductivity SiC resistors positioned thereon and fabricated by processing techniques utilizing selective etching properties of SiC.

Claims

1. A high temperature pressure transducer, comprising:

a diaphragm of a predetermined thickness fabricated from a first type of silicon carbide and at least one piezoresistive sensor of a second type of silicon carbide integrally formed on said diaphragm.

2. The pressure transducer according to claim 1, wherein said first type of silicon carbide is p-type with said second type being n-type.

3. The pressure transducer according to claim 1, wherein the thickness of said diaphragm is between 3-20 um.

4. The pressure transducer according to claim 1, wherein said silicon carbide is β

-silicon carbide.

5. The pressure transducer according to claim 1, further including an annular member secured to the surface of said diaphragm opposite said sensor and having a central aperture positioned about said sensor to enable said diaphragm to deflect within said aperture when a force is exerted on said sensor containing surface.

6. The pressure transducer according to claim 5, wherein said annular member is fabricated from silicon.

7. The transducer according to claim 1, wherein said silicon carbide forming said sensor is unintentionally doped silicon carbide.

8. The transducer according to claim 1, wherein said silicon carbide forming said sensor is nitrogen doped silicon carbide.

9. The transducer according to claim 1, wherein said at least one sensor is included in a four sensor Wheatstone bridge configuration with each sensor fabricated from said second type of silicon carbide.

10. The transducer according to claim 1, further including a metal contact formed on said diaphragm coupled to said sensor to enable contact therewith.

11. A method of fabricating a high temperature pressure transducer comprising the steps of:

growing a first layer of a first type of silicon carbide on the surface of a silicon wafer, said layer having a given thickness;

growing a thinner layer of a second type of silicon carbide on the surface of said first layer;

selectively etching said thinner layer of said second type of silicon carbide to form at least one piezoresistive sensor from said thinner layer; and

forming an aperture in said silicon wafer, said aperture having an area underlying said sensor to allow said first type silicon carbide layer to act as a diaphragm.

12. The method according to claim 11, wherein said step of growing employs chemical vapor deposition of said silicon carbide.

13. The method according to claim 11, wherein said silicon carbide is beta silicon carbide.

14. The method according to claim 11, wherein said first type of silicon carbide is p-type.

15. The method according to claim 11, wherein said second type of silicon carbide is n-type.

16. The method according to claim 11, wherein said layer of first type silicon carbide is between 3-20 um thick.

17. The method according to claim 16, wherein said thinner layer is less than 1.5 um thick.

18. The method according to claim 11, wherein the step of selectively etching includes reactive ion etching said thinner layer.

19. The method according to claim 11, wherein the step of selectively etching includes photoelectrochemical etching said sensor.

20. The method according to claim 11, further including the step of forming contacts on said layer of said first type of silicon carbide after forming said sensor.

21. The method according to claim 20, wherein the step of forming said contacts includes sputtering a metal contact pattern on said layer of silicon carbide.

22. A high temperature pressure sensor, comprising:

a piezoresistive sensor fabricated from a first type of silicon carbide, and

a force deflecting member fabricated from a second type of silicon carbide having said sensor mounted thereon.

23. The sensor according to claim 22, wherein said force deflecting member is a diaphragm.

24. The sensor according to claim 22, wherein said force deflecting member is a beam.