High temperature transducers and methods of fabricating the same employing silicon carbide
First Claim
Patent Images
1. A high temperature pressure transducer, comprising:
- a diaphragm of a predetermined thickness fabricated from a first type of silicon carbide and at least one piezoresistive sensor of a second type of silicon carbide integrally formed on said diaphragm.
1 Assignment
0 Petitions
Accused Products
Abstract
There is disclosed an apparatus and structure for a pressure transducer employing silicon carbide and utilizing p-type SiC as a diaphragm with n-type mesa SiC force sensing resistors integrally formed on the surface of the diaphragm. The p-type SiC diaphragm is positioned on top of an annular ring of silicon which is formed from a silicon wafer utilized as the supporting wafer for the process. The structure depicted is a given conductivity SiC diaphragm having opposite conductivity SiC resistors positioned thereon and fabricated by processing techniques utilizing selective etching properties of SiC.
-
Citations
24 Claims
-
1. A high temperature pressure transducer, comprising:
a diaphragm of a predetermined thickness fabricated from a first type of silicon carbide and at least one piezoresistive sensor of a second type of silicon carbide integrally formed on said diaphragm. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
-
11. A method of fabricating a high temperature pressure transducer comprising the steps of:
-
growing a first layer of a first type of silicon carbide on the surface of a silicon wafer, said layer having a given thickness; growing a thinner layer of a second type of silicon carbide on the surface of said first layer; selectively etching said thinner layer of said second type of silicon carbide to form at least one piezoresistive sensor from said thinner layer; and forming an aperture in said silicon wafer, said aperture having an area underlying said sensor to allow said first type silicon carbide layer to act as a diaphragm. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
-
-
22. A high temperature pressure sensor, comprising:
-
a piezoresistive sensor fabricated from a first type of silicon carbide, and a force deflecting member fabricated from a second type of silicon carbide having said sensor mounted thereon. - View Dependent Claims (23, 24)
-
Specification