Writable analog reference voltage storage device
First Claim
1. A circuit disposed on a semiconductor substrate for generating an analog voltage signal in a semiconductor integrated circuit disposed on said semiconductor substrate, including:
- an analog floating gate storage device disposed on said semiconductor substrate, said analog floating gate storage device including a floating gate;
a non-avalanche hot electron injection means associated with said analog floating gate device for injecting electrons onto said floating gate;
means associated with said analog floating gate device for removing electrons from said floating gate;
an analog output voltage bus; and
a high input impedance follower amplifier having an input connected to said floating gate and an output connected to said analog output voltage bus.
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Accused Products
Abstract
A circuit for generating N analog voltage signals for reference or bias use employs N analog floating gate storage devices. Electron injection circuitry is provided for injecting electrons on to and a tunneling structure is provided for removing electrons from the floating gate of each floating gate storage device. A follower amplifier is connected to each floating gate storage device and drives an analog output voltage bus. A capacitor is connected to each analog output storage bus. An analog pass gate is connected between each analog output voltage bus and a common monitor/dynamic load bus. Each analog pass gate is driven by a strobe signal.
167 Citations
25 Claims
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1. A circuit disposed on a semiconductor substrate for generating an analog voltage signal in a semiconductor integrated circuit disposed on said semiconductor substrate, including:
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an analog floating gate storage device disposed on said semiconductor substrate, said analog floating gate storage device including a floating gate; a non-avalanche hot electron injection means associated with said analog floating gate device for injecting electrons onto said floating gate; means associated with said analog floating gate device for removing electrons from said floating gate; an analog output voltage bus; and a high input impedance follower amplifier having an input connected to said floating gate and an output connected to said analog output voltage bus. - View Dependent Claims (2, 3, 4, 5, 6, 21, 22, 23, 24, 25)
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7. A circuit disposed on a semiconductor substrate for generating N analog voltage signals in a semiconductor integrated circuit disposed on said semiconductor substrate, including:
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N analog floating gate storage devices disposed on said semiconductor substrate, each of said analog floating gate storage devices including a floating gate; a non-avalanche hot electron injection means associated with each of said analog floating gate device for injecting electrons onto its floating gate; digital control means for selectively activating each electron injection means; means associated with each of said analog floating gate devices for removing electrons from its floating gate; an analog output voltage bus associated with each of said analog floating gate devices, each of said analog output voltage busses having a capacitance associated therewith; and a high input impedance follower amplifier associated with each of said analog floating gate devices, each of said follower amplifiers having an input connected to its floating gate and an output connected to its analog output voltage bus. - View Dependent Claims (8, 9, 10)
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11. A circuit disposed on a semiconductor substrate for generating an analog voltage signal in a semiconductor integrated circuit disposed on said semiconductor substrate, including:
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an analog floating gate storage device disposed on said semiconductor substrate, said analog floating gate storage device including a floating gate connected to a stabilizing capacitor, and a non-avalanche hot electron injection device including a collector connected to a first voltage node, an emitter connected to a second voltage node and a base connected to a third voltage node and an insulated gate connected to said floating gate; means for removing electrons from said floating gate; an analog output voltage bus; and a high input impedance follower amplifier having an input connected to said floating gate and an output connected to said analog output voltage bus. - View Dependent Claims (12, 13, 14, 15, 17)
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16. A circuit disposed on a semiconductor substrate for generating N analog voltage signals in a semiconductor integrated circuit disposed on said semiconductor substrate, including:
N analog floating ate storage devices disposed on said semiconductor substrate, each of said analog floating gate storage devices including; a select node, a first P-channel MOS transistor, having a source connected to a first voltage source, a drain, and a gate connected to said select node, a second P-channel MOS transistor, having a source connected to a second voltage source, a drain, and a gate connected to said select node, a floating gate connected to a stabilizing capacitor, a non-avalanche hot electron injection device including a collector connected to the drain of said first P-channel MOS transistor, a base connected to the drain of said second P-channel MOS transistor, an emitter connected to a third voltage source, and an insulated gate disposed above said base, said insulated gate self aligned with said collector and not overlapping said emitter, said insulated gate connected to said floating gate, means for removing electrons from said floating gate, and wherein said first, second, and third voltage sources are selected so as to cause non-avalanche hot electron injection onto said floating gate; addressing means for activating selected ones of said select nodes so as to turn on their first and second P-channel MOS transistors; an analog output voltage bus; and a high input impedance follower amplifier having an input connected to said floating gate and an output connected to said analog output voltage bus. - View Dependent Claims (18, 19, 20)
Specification