Semiconductor integrated circuit using junction field effect transistor as current control element

• US 5,168,175 A
• Filed: 02/13/1991
• Issued: 12/01/1992
• Est. Priority Date: 02/21/1990
• Status: Expired due to Term

• Current Assignee: Toshiba Corporation
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Endo, Koichi
• Primary Examiner(s): LaRoche, Eugene R.
• Assistant Examiner(s): RATLIFF, REGINALD A
• Application Number:
  US07/654,807
• Time in Patent Office: 657 Days
• Field of Search: 307/304, 307/305, 307/548, 307/554
• US Class Current: 327/430
• CPC Class Codes: G05F 1/573 with overcurrent detector
• CPC Class Codes: H03K 17/08104 in field-effect transistor switches H03K17/0812, H03K17/0814 take precedence
• CPC Class Codes: H03K 17/687 the devices being field-effect transistors

Abstract

A semiconductor integrated circuit for obtaining constant voltage characteristics or a current switching function by controlling an output current using a current control element has a DC input terminal, a common input/output terminal, and an output terminal. A junction field effect transistor (JFET) is used as a current control element. The first main electrode (drain) and second main electrode (source) of the JFET are connected to the DC current input terminal and the output terminal, respectively. A DC power is input between the DC input terminal and the common input/output terminal. A power between the output terminal and the common input/output terminal is applied to a load. A maximum current of the JFET is limited to a drain maximum saturation current and a current having a value larger that of the maximum saturation current is not basically supplied to the JFET.

Claims

1. A semiconductor integrated circuit comprising:

DC input terminal means for receiving DC power;

common input/output terminal means for receiving DC power and for supplying power to a load;

output terminal means for supplying power to said load;

a junction field effect transistor having a first main electrode connected to said DC input terminal means and a second means electrode connected to said output terminal means;

output voltage sensing means for sensing at least a portion of a voltage between said output terminal means and said common input/output terminal means to provide a sensed output voltage;

reference voltage generating means for generating a reference voltage; and

error amplifying means for comparing said sensed output voltage and said reference voltage and for generating a control signal controlling ON/OFF operation of said junction field effect transistor on the basis of the comparison.

2. A circuit according to claim 1, wherein said common input/output terminal means is connected to a ground potential.

3. A circuit according to claim 1, wherein said output voltage sensing means includes dividing means for dividing said voltage between said output terminal means and said common input/output terminal means to provide said sensed output voltage.

4. A circuit according to claim 3, wherein said dividing means includes first and second load elements connected in series between said output terminal means and said common input/output terminal means, said load elements providing said sensed output voltage at a terminal connecting said first and second load elements.

5. A circuit according to claim 4, wherein each of said first and second load elements includes at least one resistor.

6. A circuit according to claim 1, wherein said error amplifying means includes an error amplifier.

7. A semiconductor integrated circuit comprising:

DC input terminal means for receiving DC power;

first output terminal means for supplying power to a first load;

second output terminal means for supplying power to a second load;

common input/output terminal means for receiving DC power and for supplying power to said first and second loads;

a semiconductor current control element having a first electrode and a second electrode, said first electrode being connected to said DC input terminal means;

a first junction field effect transistor having a first electrode connected to said second electrode of said semiconductor current control element and a second electrode connected to said first output terminal means;

a second junction field effect transistor having a first electrode connected to said second electrode of said semiconductor current control element and a second electrode connected to said second output terminal means;

first output voltage sensing means for sensing at least a portion of a voltage between said first output terminal means and said common input/output terminal means to provide a first sensed output voltage;

second output voltage sensing means for sensing at least a portion of a voltage between said second output terminal means and said common input/output terminal means to provide a second sensed output voltage;

reference voltage generating means for generating a reference voltage;

first error amplifying means for comparing said first sensed output voltage to said reference voltage and for generating a first control signal controlling ON/OFF operation of said first junction field effect transistor on the basis of the comparison of said first sensed output voltage and said reference voltage;

second error amplifying means for comparing said second sensed output voltage to said reference voltage and for generating a second control signal controlling ON/OFF operation of said second junction field effect transistor on the basis of the comparison of said second sensed output voltage and said reference voltage; and

third error amplifying means for comparing said first and second control signals and for generating a third control signal controlling ON/OFF operation of said semiconductor current control element on the basis of said comparison of said first and second control signals.

8. A circuit according to claim 7, wherein said semiconductor current control element is a bipolar transistor.

9. A circuit according to claim 7, wherein said semiconductor current control element is a junction field effect transistor.

10. A circuit according to claim 7, wherein said common input/output terminal means is connected to a ground potential.

11. A circuit according to claim 7, wherein:

said first output voltage sensing means includes first dividing means for dividing said voltage between said first output terminal means and said common input/output terminal means to provide said first sensed output voltage, and

said second output voltage sensing means includes second dividing means for dividing said voltage between said second output terminal means and said common input/output terminal means to provide said second sensed output voltage.

12. A circuit according to claim 11, wherein each of said first and second dividing means includes first and second load elements connected in series between the respective output terminal means and said common input/output terminal means, said load elements providing said sensed output voltage at a terminal connecting said first and second load elements.

13. A circuit according to claim 12, wherein each of said first and second load elements includes at least one resistor.

14. A circuit according to claim 7, wherein each of said error amplifying means includes an error amplifier.