Apparatus for wafer processing with in situ rinse

• US 5,169,408 A
• Filed: 01/26/1990
• Issued: 12/08/1992
• Est. Priority Date: 01/26/1990
• Status: Expired due to Term

• Current Assignee: FSI International, Inc. (Tokyo Electron Limited)
• Original Assignee: FSI International, Inc. (Tokyo Electron Limited)
• Inventors: Jenson, Mark L., Skinner, Charles W., Biggerstaff, Rex L., Kegley, James G., Syverson, Daniel J.
• Primary Examiner(s): Chaudhuri, Olik
• Assistant Examiner(s): Fourson, G.
• Application Number:
  US07/470,871
• Time in Patent Office: 1,047 Days
• Field of Search: 134/114, 134/144, 134/149, 134/151, 134/154, 134/155, 134/157, 134/177, 134/182, 134/902, 29/25.01, 156/345, 156/646
• US Class Current: 29/25.01
• CPC Class Codes: H01L 21/67023 for general liquid treatment, e.g. etching followed by cleaning
• CPC Class Codes: Y10S 134/902 Semiconductor wafer

Abstract

A wafer processing apparatus including a head defining an etching chamber, the sidewall of the head being slidable along the base so that the sidewall and base will normally define an etch chamber; and the sidewall may be moved upwardly to open a discharge passage for rinsing water, and a deflecting surface for deflecting the rinsing water downwardly and draining the rinsing water from the passage. The housing is separable above the deflector ring to provide access to the wafer for inserting the wafer and replacing it.

Claims

1. Apparatus for etching and rinsing a single semiconductor wafer, comprising

head means defining an etching chamber capable of being opened and closed to permit a wafer to be loaded into and removed from the chamber,

support means mounting a wafer in the chamber, said support means being capable of rotating the wafer,

means flowing and interrupting flow of etchant gas and other gas through the chamber and across at least a portion of the wafer,

a source of rinsing liquid comprising a duct into the etching chamber to direct the rinsing liquid onto and across the wafer,

and means collecting the rinsing liquid from the chamber.

2. Apparatus according the claim 1 wherein the head means comprises

base means and wall means defining the etching chamber, the wall means having a peripheral rinsing liquid receiving passage opposite the support means for collecting the rinsing liquid slung from the rotating wafer.

3. Apparatus according o claim 1 wherein the head means comprises a peripheral wall with open passage means opposite the support means and extending around at least a portion of the wall to receive rinsing liquid slung from the rotating wafer, and means restricting flow of gases from the chamber and through the passage.

4. Apparatus according to claim 1 wherein the head means comprises a peripheral wall with open passage means opposite the support means and extending around at least a portion of the wall to receive rinsing liquid slung from the rotating wafer, and means closing said passage with respect to the etching chamber.

5. Apparatus according to claim 1 wherein the head means comprises a peripheral wall with open passage means around at least a portion of the wall adjacent the support means to receive rinsing liquid slung from the rotating wafer, the support means and peripheral wall being relatively movable with respect to each other whereby the wafer may be alternately located opposite the open passage and away from the passage.

6. Apparatus according to claim 2 wherein the base means and wall means are relatively movable with respect to each other whereby the base means alternately closes and opens flow communication between the chamber and the passage.

7. Apparatus according to claim 2 wherein said wall means further comprises a peripheral deflector surface obliquely oriented adjacent the support means and wafer to deflect rinsing liquid away from the wafer.

8. Apparatus according to claim 5 and the peripheral wall comprises upper and lower portions separable from each other to define an access port into the chamber for accessing the wafer.

9. Apparatus according to claim 8 and the support means and peripheral wall being relatively movable to position the wafer at various locations along the wall whereby the wafer may be alternately located opposite the open passage and opposite the access port.

10. Apparatus for etching and rinsing a semiconductor wafer comprising

a housing comprising a closed etching chamber and a peripheral sidewall enclosing the chamber,

rotatable support means in the etching chamber suitable for mounting and rotating such a wafer,

means flowing and interrupting flow of etchant gas and other gas through the chamber and across at least a portion of the wafer,

means directing rinsing liquid into the etching chamber and onto and across the wafer on the support means, and

the peripheral sidewall comprising open passage means around at least a portion of the sidewall and opposite the rotatable support means and wafer to receive rinsing liquid slung from the rotating wafer.

11. Apparatus according to claim 10 wherein the housing also comprises a base portion relatively slidable along the peripheral sidewall to open and close the open passage means.

12. Apparatus according to claim 10 wherein the peripheral sidewall also comprises a deflector surface portion in said open passage means, the deflector surface portion being oriented obliquely to the peripheral sidewall to obliquely deflect liquid particles slung from the rotating wafer.

13. Apparatus according to claim 11 wherein said rotatable support means is on the base portion, the wafer and support means having an alternate position relative to the peripheral sidewall when relative movement between the base and sidewall closes the passage means, and the peripheral sidewall also comprising a gas outlet manifold portion extending around at least a portion of the sidewall and located opposite said alternate position of the support means to receive the gases after the gases have flowed across the portions of the wafer.

14. Apparatus according to claim 13 wherein the housing sidewall comprises an upper portion separable from adjacent portions of the sidewall at a joint adjacent the manifold portion, the sidewall defining an access opening at said joint when the upper portion is separated from the adjacent portions of the sidewall to facilitate moving a wafer into and out of the etching chamber.