Electron-emitting device and process for making the same

• US 5,170,092 A
• Filed: 05/16/1990
• Issued: 12/08/1992
• Est. Priority Date: 05/19/1989
• Status: Expired due to Fees

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Kaneko, Akira, Tomii, Kaoru, Kanno, Toru
• Primary Examiner(s): Yusko, Donald J.
• Assistant Examiner(s): PATEL, NIMESHKUMAR D
• Application Number:
  US07/524,117
• Time in Patent Office: 937 Days
• Field of Search: 313/309, 313/310, 313/311, 313/336
• US Class Current: 313/310
• CPC Class Codes: H01J 1/3042 microengineered, e.g. Spindt-type
• CPC Class Codes: H01J 9/025 of field emission cathodes

Abstract

An electron-emitting device including; electrical insulating substrates (1); an intermediate layer having a metal layer (2) and an insulating material layer (3) or having an insulating material layer (3), superposed in the thickness direction of said electrical insulating substrates (1) so as to be provided between said electrical insulating substrates (1) in the manner that it is recessed from one side surfaces of said electrical insulating substrates (1); a cathode material (4) provided at the middle portion of said intermediate layer, one end of said cathode material (4) protruding from the insulating material layer (3) that constitutes said intermediate layer; and a gate electrode (5) provided on said electrical insulating substrate (1) on the side where said intermediate layer is recessed.

Claims

1. An electron-emitting device comprising;

a plurality of electrically insulating substrates, each having at least an upper face, said upper face of each said substrates defining a common plane;

an intermediate layer interposed between successive substrates, said intermediate layer being recessed from said common plane;

a cathode layer material provided within said intermediate layer at a middle portion thereof and extending from said intermediate layer adjacent to said common plane; and

a gate electrode provided on said upper face of each of said plurality of substrates.

2. An electron-emitting device according to claim 1, wherein said intermediate layer comprises a metal layer and an insulating material layer, and said insulating material layer and said metal layer are provided consecutively in a direction which is opposite to a direction in which said cathode layer material extends.

3. An electron-emitting device according to claim 1, wherein said intermediate layer comprises an insulating material layer.

4. An electron-emitting device according to claim 1, wherein said cathode layer material provided between said plurality of electrically insulating substrates has a wall thickness of from about 100 Å

to about 1 μ

m.

5. An electron-emitting device according to claim 2, wherein said metal layer comprises Al or Ta.

6. An electron-emitting device according to claim 1, wherein said gate electrode comprises a material having corrosion resistance to an etchant for said intermediate layer.

7. An electron-emitting device according to claim 1, wherein said cathode layer material is selected from the group consisting of W, Mo, Ta, TiC, SiC, ZrC and LaB₂.