Method of making an optical component by ion implantation

• US 5,174,876 A
• Filed: 12/14/1990
• Issued: 12/29/1992
• Est. Priority Date: 12/18/1989
• Status: Expired due to Fees

• Current Assignee: Forschungszentrum Julich GmbH Postfach
• Original Assignee: Forschungszentrum Jã¼Lich GmbH (Bundesrepublik Deutschland)
• Inventors: Buchal, Christoph, Sohler, Wolfgang
• Primary Examiner(s): Nguyen, Nam X.
• Application Number:
  US07/627,809
• Time in Patent Office: 746 Days
• Field of Search: 204/192.15, 204/192.31, 204/192.26, 427/162, 427/163, 427/38, 350/96.12, 156/605
• US Class Current: 427/526
• CPC Class Codes: G02B 6/1347 using ion implantation ion implantation in glass C03C23/0055; ion implantation in general C23C

Abstract

An optical electronic component, in which strip waveguides of limited depth and lateral width are formed in undoped dielectric substrate, e.g. an undoped crystal, by implantation of rare-earch ions or ions of transition metals, preferably laser-active ions with energies of 50 keV to 10 MeV.

Claims

1. In a process for making an optical component, the improvement which comprises the steps of:

(a) forming in a dielectric optical component substrate over a laterally limited region thereof and in a generally elongate pattern by doping said substrate a strip light waveguide from said limited region of said substrate; and

(b) additionally implanting in said waveguide over a limited length of said string light waveguide rare-earth ions or ions of a transition metal which are laser-active in the presence of the material of the waveguide to form a laser from said limited length of the waveguide, the implanting of the laser-active ions being effected at an energy of 50 KeV to 10 MeV.

2. The improvement defined in claim 1, further comprising the step of masking said substrate with a mask impenetrable by said ions to define said region and said pattern on said substrate.

3. The improvement defined in claim 1 wherein the implantation of said substrate with said ions is carried out at a substrate temperature of substantially 300 K. to 800 K.

4. The improvement defined in claim 1 wherein the implantation of said substrate with said ions is carried out at a substrate temperature of substantially 77 K. to 300 K.

5. The improvement defined in claim 1, further comprising the step of subjecting said substrate to tempering at a heating temperature of 800 K. to 1800 K. following implantation of said ions in said substrate.

6. The improvement defined in claim 1, further comprising additionally implanting light ions in said region of said substrate.

7. The improvement defined in claim 6 wherein said light ions are selected from the group which consist of hydrogen, helium and oxygen.

8. The improvement defined in claim 1 wherein a plurality of spaced apart regions of said substrate are implanted with said ions at said energy to form spaced apart and separate strip light waveguides in said substrate.

9. The improvement defined in claim 8 wherein the spaced apart regions are implanted with different ones of said ions.