Process for marking semiconductor surfaces
First Claim
1. In a process for marking semiconductor surfaces with a bar code (Sk) having narrow bars (sSt) and wide bars (bSt) separated one from the other by a narrow gap (sL) or a wide gap (bL), said process comprising producing by laser bombardment with a softmark technique a plurality of parallel bar elements (Se), forming each bar element by a series of overlapping softmark melting points (SSp), applying the melting points (SSp) of the bar elements (Se) at a depth of less than 2 micrometers, and controlling the laser bombardment with respect to time so that, when producing one of the softmark melting points (SSp), the previously produced softmark melting point is at least partially hardened so as to maintain a contour of the previously produced softmark melting point.
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Accused Products
Abstract
The bar code (Sk) for marking semiconductor surfaces includes a plurality of parallel bar elements (Se) having identical widths (b), wherein every bar element (Se) is formed as a series of overlapping softmark melting points (SSp) produced by means of laser bombardment to a depth of less than 2 u m. Narrow bars (sSt) are preferably formed by means of one bar element (Se) and wide bars (bSt) are preferably formed by means of two bar elements (Se) which are applied at a slight distance (a) relative to one another. The process for marking semiconductor surfaces with this bar code includes producing by laser bombardment with a softmark technique a plurality of parallel bar elements (Se). Each bar element is formed by a series of overlapping softmark melting points (SSp). The melting points (SSp) of the bar elements (Se) are applied at a depth of less than 2 micrometers, and the laser bombardment is controlled with respect to time so that, when producing one of the softmark melting points (SSp), the previously produced softmark melting point is at least partially hardened again.
63 Citations
7 Claims
- 1. In a process for marking semiconductor surfaces with a bar code (Sk) having narrow bars (sSt) and wide bars (bSt) separated one from the other by a narrow gap (sL) or a wide gap (bL), said process comprising producing by laser bombardment with a softmark technique a plurality of parallel bar elements (Se), forming each bar element by a series of overlapping softmark melting points (SSp), applying the melting points (SSp) of the bar elements (Se) at a depth of less than 2 micrometers, and controlling the laser bombardment with respect to time so that, when producing one of the softmark melting points (SSp), the previously produced softmark melting point is at least partially hardened so as to maintain a contour of the previously produced softmark melting point.
Specification