MOS type input circuit

• US 5,175,445 A
• Filed: 04/25/1991
• Issued: 12/29/1992
• Est. Priority Date: 04/26/1990
• Status: Expired due to Fees

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Kinugasa, Masanori, Shigehara, Hiroshi
• Primary Examiner(s): HUDSPETH, DAVID R
• Application Number:
  US07/691,414
• Time in Patent Office: 614 Days
• Field of Search: 307/264, 307/475, 307/270, 307/450, 307/451, 307/452, 307/443, 307/558, 307/568, 307/542, 307/279, 307/290
• US Class Current: 326/87
• CPC Class Codes: H03K 19/00384 in field effect transistor circuits
• CPC Class Codes: H03K 19/0948 using CMOS or complementary insulated gate field-effect transistors
• CPC Class Codes: H03K 3/3565 Bistables with hysteresis, e.g. Schmitt trigger

Abstract

The source-drain paths of p-channel first and second MOSFETs are connected in series between a node, to which a high-potential power source voltage is supplied, and a signal output node. The source-drain paths of n-channel third and fourth MOSFETs are connected in series between the signal output node and a node to which a low-potential power source voltage is supplied. A signal from an input node is supplied to the gates of said four MOSFETs in a parallel manner. The source-drain path of an n-channel fifth MOSFET is connected in parallel to the source-drain path of the second MOSFET which is not directly connected to the node of the high-potential power source voltage. The gate of the fifth MOSFET is connected to the node of the high-potential power source voltage. The source-drain path of a p-channel sixth MOSFET is connected in parallel to the source-drain path of the third MOSFET which is not directly connected to the node of the low-potential power source voltage. The gate of the sixth MOSFET is connected to the node of the low-potential power source voltage.

Claims

1. A CMOS type input circuit comprising:

a first node for receiving a first power source voltage;

a second node for receiving a second power source voltage;

a third node for outputting a signal;

a first MOSFET of a first channel type having a gate and a source-drain path having a first end coupled to said first node, and a second end;

a second MOSFET of the first channel type having a gate, and a source-drain path having a first end coupled to the second end of said source-drain path of said first MOSFET, and a second end coupled to said third node;

a third MOSFET of a second channel type having a gate and a source-drain path having a first end coupled to said second node, and a second end;

a fourth MOSFET of the second channel type having a gate and a source-drain path having a first end coupled to the second end of said source-drain path of said third MOSFET, and a second end coupled to said third node; and

a fifth MOSFET of the second channel type having a gate coupled to said first node, and a source-drain path coupled in parallel to said source-drain path of said second MOSFET.

2. A CMOS type input circuit according to claim 1, further comprising a sixth MOSFET of the first channel type, having a gate coupled to the second node, and a source-drain path coupled in parallel to said source-drain path of said fourth MOSFET.

3. A CMOS type input circuit according to claim 2, wherein said gates of said first, second, third, and fourth MOSFETs are coupled together.

4. A CMOS type input circuit according to claim 1, wherein the first node includes

means for receiving a first power source voltage having value such that the fifth MOS operates in a normally conductive state.

5. A CMOS type input circuit according to claim 2, wherein the second node includes

means for receiving a second power source voltage having a value such that sixth MOS operates in a normally conductive state.

6. A CMOS type input circuit comprising:

a first node for receiving a first power source voltage;

a second node for receiving a second power source voltage;

a third node for outputting a signal;

a first MOSFET of a first channel type having a gate and a source-drain path having a first end coupled to said first node, and a second end;

a second MOSFET of the first channel type having a gate, and a source-drain path having a first end coupled to the second end of said source-drain path of said first MOSFET, and a second end coupled to said third node;

a third MOSFET of a second channel type having a gate, and a source-drain path having a first end coupled to said second node, and a second end;

a fourth MOSFET of the second channel type having a gate, and a source-drain path having a first end coupled to the second end of said source-drain path of said third MOSFET, and a second end coupled to said third node; and

a fifth MOSFET of the second channel type having a gate, and a source-drain path coupled in parallel to said source-drain path of said second MOSFET.

a sixth MOSFET of the first channel type, having a gate, and a source-drain path coupled in parallel to said source-drain path of said third MOSFET.

a seventh MOSFET of the second channel type having a gate, and a source-drain path coupled between said first end of said source-drain path of said third MOSFET and said second node;

an eighth MOSFET of the first channel type having a gate, and a source-drain path having a first end coupled to said first node, and a second end;

a ninth MOSFET of the first channel type having a gate, and a source-drain path having a first end coupled to the second end of said source-drain path of said eighth MOSFET, and a second end coupled to said third node;

a tenth MOSFET of the second channel type having a gate, and a source-drain path having a first end coupled to said second node, and a second end;

an eleventh MOSFET of the second channel type having a gate, and a source-drain path having a first end coupled to the second end of said source-drain path of said tenth MOSFET, and a second end;

a twelfth MOSFET of the second channel type having a gate, and a source-drain path having a first end coupled to the second end of said source-drain path of said eleventh MOSFET, and a second end coupled to said third node;

a thirteenth MOSFET of the second channel type having a gate, and a source-drain path coupled in parallel to said source-drain path of said ninth MOSFET; and

a fourteenth MOSFET of the first channel type having a gate, and a source-drain path coupled in parallel to said source-drain path of said twelfth MOSFET.

7. A CMOS type input circuit according to claim 6, wherein said gates of said first, second, third, fourth, and tenth MOSFETs are coupled together, and said gates of said seventh, eight, ninth, eleventh, and twelfth MOSFETs are coupled together.

8. A CMOS type input circuit according to claim 7, wherein said gates of said fifth and thirteenth MOSFETs are coupled to said first node, and said gates of said sixth and fourteenth MOSFETs are coupled to said second node.

9. A CMOS type input circuit according to claim 6, wherein said gates of said first, second, fourth, seventh, and tenth MOSFETs are coupled together, and said gates of said third, eighth, tenth, and twelfth MOSFETs are coupled together.

10. A CMOS type input circuit according to claim 9, wherein said gates of said fifth and thirteenth MOSFETs are coupled to said first node, and said gates of said sixth and fourteenth MOSFETs are coupled to said second node.

11. A CMOS type input circuit comprising:

a first node for receiving a first power source voltage;

a second node for receiving a second power source voltage;

a third node for outputting a signal;

a first MOSFET of a first channel type having a gate and a source-drain path having a first end coupled to said first node, and a second end;

a second MOSFET of the first channel type having a gate, and a source-drain path having a first end coupled to the second end of said source-drain path of said first MOSFET ,and a second end coupled to said third node;

a third MOSFET of a second channel type having a gate, and a source-drain path having a first end coupled to said second node, and a second end;

a fourth MOSFET of a second channel type having a gate, and a source-drain path having a first end coupled to the second end of said source-drain path of said third MOSFET, and a second end coupled to said third node;

a fifth MOSFET of a second channel type having a gate, and a source-drain path coupled in parallel to said source-drain path of said second MOSFET;

a sixth MOSFET of a second channel type having a gate, and a source-drain path coupled in parallel to said source-drain path of said third MOSFET;

a seventh MOSFET of the first channel type having a gate, and a source-drain path coupled between said first end of said source-drain path of said first MOSFET and said first node;

an eighth MOSFET of the first channel type having a gate, and a source-drain path having a first end coupled to said first node, and a second end;

a ninth MOSFET of the first channel type having a gate, and a source-drain path having a first end coupled to the second end of said source-drain path of said eighth MOSFET, and a second end;

a tenth MOSFET of the first channel type having a gate, and a source-drain path having a first end coupled to the second end of said source-drain path of said ninth MOSFET, and a second end coupled to said third node;

an eleventh MOSFET of a second channel type having a gate, and a source-drain path having a first end coupled to said second node, and a second end;

a twelfth MOSFET of a second channel type having a gate, and a source-drain path having a first end coupled to the second end of said source-drain path of said eleventh MOSFET, and a second end coupled to said third node;

a thirteenth MOSFET of the second channel type having a gate, and a source-drain path coupled in parallel to said source-drain path of said tenth MOSFET; and

a fourteenth MOSFET of the first channel type having a gate, and a source-drain path coupled in parallel to said source-drain path of said twelfth MOSFET.

12. A CMOS type input circuit according to claim 11, wherein said gates of said first, second, third, fourth, and eighth MOSFETs are coupled together, and said gates of said seventh, ninth, tenth, eleventh, and twelfth MOSFETs are coupled together.

13. A CMOS type input circuit according to claim 12, wherein said gates of said fifth, and thirteenth MOSFETs are coupled to said first node, and said gates of said sixth and fourteenth MOSFETs are coupled to said second node.

14. A CMOS type input circuit according to claim 11, wherein said gates of said second, third, fourth, seventh, and ninth MOSFETs are coupled together, and said gates of said first, eighth, tenth, eleventh, and twelfth MOSFETs are coupled together.

15. A CMOS type input circuit according to claim 14, wherein said gates of said fifth and thirteenth MOSFETs are coupled to said first node, and said gates of said sixth and fourteenth MOSFETs are coupled to said second node.

16. A CMOS type input circuit comprising:

a first node for receiving a first power source voltage;

a second node for receiving a second power source voltage;

a third node for outputting a signal;

a first MOSFET of a first channel type having a gate and a source-drain path having a first end coupled to said first node, and a second end;

a second MOSFET of the first channel type having a gate, and a source-drain path having a first end coupled to the second end of said source-drain path of said first MOSFET, and a second end coupled to said third node;

a third MOSFET of a second channel type having a gate, and a source-drain path having a first end coupled to said second node, and a second end;

a fourth MOSFET of the second channel type having a gate, and a source-drain path having a first end coupled to the second end of said source-drain path of said third MOSFET, and a second end coupled to said third node;

a fifth MOSFET of the second channel type having a gate, and a source-drain path coupled in parallel to said source-drain path of said second MOSFET.

a sixth MOSFET of the first channel type, having a gate, and a source-drain path coupled between the second end f said source-drain path of said first MOSFET and said second node; and

a seventh MOSFET Of the second channel type having a gate, and a source-drain path coupled between the second end of said source-drain path of said fourth MOSFET and said first node.

17. A CMOS type input circuit according to claim 16, further comprising an eighth MOSFET of the first channel type having a gate, and a source-drain path coupled in parallel to said source-drain path of said third MOSFET.

18. A CMOS type input circuit according to claim 16, wherein said gates of said first, second, third, and fourth MOSFETs are coupled together, and said gates of said sixth and seventh MOSFETs are coupled to said third node.

19. A CMOS type input circuit according to claim 16, wherein said gate of said fifth MOSFET is coupled to said third node.

20. A CMOS type input circuit according to claim 17, wherein said gate of said fifth MOSFET is coupled to said first node and said gate of said eighth MOSFET is connected to said second node.

21. A CMOS type input circuit according to claim 17, wherein said gates of said fifth and eighth MOSFETs are coupled to said third node.