Single event upset hardening circuits, devices and methods

• US 5,175,605 A
• Filed: 02/05/1990
• Issued: 12/29/1992
• Est. Priority Date: 02/05/1990
• Status: Expired due to Fees

• Current Assignee: Newport Fab, LLC (Tower Semiconductor Limited)
• Original Assignee: Rockwell International Corporation
• Inventors: Pavlu, James A., Heimbigner, Gary L.
• Primary Examiner(s): Munson, Gene M.
• Application Number:
  US07/474,608
• Time in Patent Office: 1,058 Days
• Field of Search: 307/443, 307/451, 307/441, 357/41, 357/42
• US Class Current: 257/369
• CPC Class Codes: H01L 27/0203 Particular design considerations for integrated circuits
• CPC Class Codes: H01L 27/11803 using field effect technology
• CPC Class Codes: Y10S 257/921 Radiation hardened semiconductor device

Abstract

The present invention provides a unique circuit and layout methods for improving upon series redundant circuits. A substitution device, comprising a pair of series connected N or P FETs for respective single FETs, can be further hardened or enhanced against cosmic rays, particles, etc. by spacing the P FETs a predetermined distance apart so that an ion or other particle cannot strike or affect both channels simultaneously, thus avoiding upset. When these devices are placed in cells (i.e., ASIC) in logic or the like circuits, the predetermined spacing is related to cell height. Also, alignment of the gates of the substitution device on a common axis minimizes the window of a satellite through which a particle could effectively strike the common gate axis possibly to upset both gates.

Claims

1. A single event upset hardened replacement on-off device for a P field effect transistor, comprising in combination:

a first P field effect transistor having a source and drain and channel therebetween and a gate over the channel;

a second P field effect transistor having a source and drain and channel therebetween and a gate over the channel;

said transistors being connected in series through their sources and drains;

a connection between the gate of the first transistor and the gate of the second transistor;

said transistors being spaced apart a predetermined distance sufficient to preclude a penetrating particle from affecting both channels thereof to establish a perturbation in said device; and

,

said gates being substantially aligned along the lengths thereof.

2. The device of claim 1, further comprising a similar hardened replacement device for an N field effect transistor, said similar hardened device employing a pair of N field effect transistors connected in series, each having a source and rain and a channel therebetween, and a gate over the channel, said N transistors being connected in series through their sources and drains and the gates of said similar replacement device connected together and connected to the gates of the P transistors;

a connection between said series connected P transistors and said series connected N transistors connecting them in series;

said first P transistor adapted to be connected to a source of potential and one of said N transistors adapted to be connected to a different source of potential.

3. The device of claim 2 including said similar N transistor replacement device, further comprising:

an input connection to said gates and an output connection from the series connection between the pair of N transistors and the pair of P transistors;

to comprise an inverter circuit hardened against single event upset; and

,

said N transistors being spaced apart a predetermined distance sufficient to preclude a penetrating particle from affecting both channels of the similar device to upset the similar device when in the off state.

8. The cell of claim 2, wherein:

said spacing between the gates is of the order of 41 microns.

4. A single event upset hardened replacement on-off device for a N field effect transistor, comprising in combination:

a first N field effect transistor having a channel, a gate thereover and a source and drain on opposite sides of the channel;

a second N field effect transistor having a channel, a gate thereover and a source and drain on opposite sides of the channel of the second N transistor;

said transistors being connected in series through their sources and drains;

a connection between the gate of the first transistor and the gate of the second transistor;

said transistors being spaced apart a predetermined distance sufficient to preclude a penetrating particle from adversely affecting both channels thereof of said device; and

,

said gates being substantially aligned along the lengths thereof.

5. A multi-circuit logic cell hardened against singe event upset characterized by:

at least one circuit comprising a pair of series connected P field effect transistors, each including a channel, a gate thereover, source and drain,

said transistors being spaced apart a predetermined distance in said cell sufficient to preclude a penetrating particle from affecting both channels thereof to adversely affect both transistors thereof; and

,

said gates being at least substantially aligned along the lengths thereof.

6. The cell of claim 5, wherein:

said spacing between the gates is of the order of 29 microns.

7. A multi-circuit logic cell hardened against single event upset characterized by:

at least one circuit comprising a pair of series connected N field effect transistors, each including a channel, a gate thereover, source and drain,

said transistors being spaced apart a predetermined distance in said cell sufficient to preclude cosmic rays from affecting both channels thereof to adversely affect both transistors thereof; and

,

said gates being at least substantially aligned along the lengths thereof.