Method of passivating etched mirror facets of semiconductor laser diodes

• US 5,177,031 A
• Filed: 05/30/1991
• Issued: 01/05/1993
• Est. Priority Date: 09/14/1990
• Status: Expired due to Term

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Vettiger, Peter, Buchmann, Peter L., Webb, David J.
• Primary Examiner(s): WILCZEWSKI, MARY A
• Application Number:
  US07/707,557
• Time in Patent Office: 586 Days
• Field of Search: 437/129, 437/946, 437/235, 437/225, 156/625
• US Class Current: 438/38
• CPC Class Codes: H01L 21/02052 Wet cleaning only H01L21/02085 takes precedence
• CPC Class Codes: H01L 21/02178 the material containing aluminium, e.g. Al2O3
• CPC Class Codes: H01L 21/02266 deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
• CPC Class Codes: H01L 21/02307 treatment by exposure to a liquid
• CPC Class Codes: H01L 21/314 Inorganic layers H01L21/3105, H01L21/32 take precedence
• CPC Class Codes: H01L 21/31616 Deposition of Al2O3
• CPC Class Codes: H01L 21/3185 of siliconnitrides
• CPC Class Codes: H01S 5/0203 Etching
• CPC Class Codes: H01S 5/028 Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
• CPC Class Codes: H01S 5/0282 Passivation layers or treatments
• CPC Class Codes: Y10S 438/958 Passivation layer

Abstract

A method of passivating etched mirror facets of semiconductor laser diodes which enhances device reliability.

The etched mirror facet is first subjected to a weet-etch process to substantially remove any native oxide as well as any surface layer which may have been mechanically damaged during the preceding mirror etch process. Then, a passivation pre-treatment is applied whereby any residual oxygen is removed and a sub-monolayer is formed which permanently reduces the non-radiative recombination of minority carriers at the mirror facet. Finally, the pre-treated mirror surface is coated with a passivation layer to avoid any environmental effect on the mirror.

Claims

1. A method of passivating etched mirror facets of a semiconductor laser diode, comprising the steps of:

a) wet-etching the surfaces of etched mirror facets of a semiconductor laser diode so as to substantially remove any surface layer mechanically damaged during prior mirror etch processes;

b) applying a passivation pre-treatment to remove any residual surface oxides which may remain after the wet etching of and form a sub-monolayer that remains chemically stable during device lifetime, thereby substantially reducing the number of non-radiative minority carrier recombination centers at the etched mirror facets; and

c) coating the pre-treated mirror facet with a passivation layer that does not react with the interface of the mirror facet, thereby preventing the diffusion of elements capable of reacting with the mirror facet interface.

2. The method of claim 1, wherein in step a) wet etching is done so as to exhibit a minimal etch-rate difference for the semiconductor materials exposed at the mirror facets.

3. The method of claim 2, comprising wet etching by use of H₂ SO₄ /H₂ P₂ /H₂ O in proportions of 1:

8;

1000.

4. The method of claim 1, wherein in step b) aqueous Na₂ S solution is used as the pre-treatment.

5. The method of claim 1, wherein in step b aqueous (NH₄)₂ S solution is used s the pre-treatment.

6. The method of claim 4, wherein the pre-treatment of step b) comprises the steps of:

b1) spinning the Na₂ S solution onto the wet-etched mirror facets of the semiconductor laser diode;

b2) drying the solution to form a crust;

b3) baking the semiconductor laser diode at 100°

to 250°

C.;

b4) removing the crust of step b2; and

b5) drying the pre-treated mirror facets.

7. The method of claim 1, wherein in step c) the pre-treated mirror facet is coated with a passivation layer consisting of Al₂ O₃.

8. The method of claim 1, wherein in step c) the pre-treated mirror facet is coated with a passivation layer consisting of Si₃ N₄.